Oxidation process apparatus, oxidation method, and method for manufacturing electronic device

Patent metadata

Field	Value
Publication number	US-9905441-B2
Application number	US-201514742067-A
Country	US
Kind code	B2
Filing date	Jun 17, 2015
Priority date	Dec 20, 2012
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.

First claim

The invention claimed is:

1. An oxidation process apparatus for performing an oxidation process on a substrate comprising:
a processing chamber;
a substrate holder provided in the processing chamber and having a substrate holding surface for holding the substrate;
an oxygen gas introduction means for introducing an oxygen gas into the processing chamber;
a surrounding portion provided in the processing chamber, having a cylindrical portion with a circular cross-section perpendicular to an extending direction from a side of the oxygen gas introduction means to a side opposite to the oxygen gas introduction means; and
a position changing means for changing relative positions of the substrate holder and the surrounding portion to allow the substrate holding surface and the surrounding portion to form a space,
wherein the surrounding portion is provided so as to, during formation of the space, surround a side surface of the substrate holder and form a gap between the surrounding portion and the substrate holder,
wherein the oxygen gas introduction means is provided so as to, during the oxidation process, introduce the oxygen gas restrictively into the space formed in the processing chamber,
wherein the substrate holder comprises a dielectric portion having the substrate holding surface, a groove portion formed in the substrate holding surface, and a means for introducing at least one of a heating gas and a cooling gas into a second space formed in the groove portion between the substrate and the dielectric portion, when the substrate is held on the substrate holding surface,
wherein the substrate holder is configured to move along a direction opposite to the extending direction in a hollow portion of the cylindrical portion of the surrounding portion and thus move in the space with a circular cross-section perpendicular to the extending direction, to form the gap between a side of the substrate holding surface and the cylindrical portion, and
wherein the oxygen gas introduced into the space and the at least one of the heating gas and the cooling gas introduced into the second space are evacuated from the space and the second space through the gap.

2. The oxidation process apparatus according to claim 1 , wherein the surrounding portion has an extending portion, and the extending portion is provided surrounding a region of the oxygen gas introduction means in which a portion thereof for introducing the oxygen gas restrictively into the space is provided, and the extending portion extends from the introducing portion side toward a side facing the introducing portion, and
wherein the space is formed by the region, the extending portion, and the substrate holding surface.

3. The oxidation process apparatus according to claim 1 , wherein the surrounding portion is provided in an upper portion in the processing chamber, and a transport port for the substrate is provided in a side portion of the processing chamber.

4. The oxidation process apparatus according to claim 2 , wherein the surrounding portion is provided in an upper portion in the processing chamber, and a transport port for the substrate is provided in a side portion of the processing chamber, and
wherein a tip of the extending portion of the surrounding portion is located at a height position in a vicinity of an upper end of the transport port.

5. The oxidation process apparatus according to claim 3 , wherein the oxygen gas introduction means comprises:
a shower plate having many holes;
a gas diffusion space formed by the shower plate and a portion of an inner wall of the processing chamber; and
a gas introduction port for introducing the oxygen gas into the gas diffusion space,
wherein the space is formed by the shower plate, the extending portion, and the substrate holding surface.

6. The oxidation process apparatus according to claim 5 , wherein a volume of the space lies within a range of 0.0042 m 3 to 0.012 m 3 .

7. The oxidation process apparatus according to claim 5 , wherein the shower plate and the substrate holding surface are arranged facing each other, and a distance between the shower plate and the substrate holding surface lies within a range of 0.042 m to 0.12 m.

8. The oxidation process apparatus according to claim 2 , wherein a cross section of the surrounding portion, taken perpendicularly to an extending direction of the surrounding portion, has a similar shape to an external shape of the substrate holding surface.

9. The oxidation process apparatus according to claim 2 , wherein the means for changing the relative positions is configured to move the substrate holder in a direction closer to the region and in a direction away from the region, and is configured to, during the formation of the space, move the substrate holder in the direction closer to the region and thereby house the substrate holding surface within the surrounding portion.

10. The oxidation process apparatus according to claim 9 , wherein the substrate holder comprises an overhang region overhanging in a direction perpendicular to the direction of movement, and a distance between the overhang region and the surrounding portion is equal to or less than 3 mm.

11. The oxidation process apparatus according to claim 10 , wherein the overhang region has a predetermined thickness in the direction of movement, and during the oxidation process, the oxygen gas is introduced into the space in a state where the substrate holder is housed within the surrounding portion by at least the predetermined thickness.

12. The oxidation process apparatus according to claim 9 , wherein evacuation conductance of the gas from the space through the gap does not change even when the means for changing the relative positions moves the substrate holding surface in the surrounding portion in the direction closer to the region and in the direction away from the region.

13. The oxidation process apparatus according to claim 1 , further comprising a heating device provided in the substrate holder, wherein a side surface of the dielectric portion is disposed in proximity to an extending portion of the surrounding portion.

14. The oxidation process apparatus according to claim 1 , wherein the substrate holder further comprises an electrode for electrostatic attachment of the substrate.

15. The oxidation process apparatus according to claim 1 , wherein an inner wall of the surrounding portion is polished.

16. An oxidation method, wherein the oxidation process apparatus according to claim 1 is used to perform an oxidation process on a film deposited on the substrate.

17. An oxidation method for performing an oxidation process on a substrate in a processing chamber provided internally with a substrate holder including a dielectric portion having a substrate holding surface for holding the substrate, and a groove portion formed in the substrate holding surface, and provided with an oxygen gas introduction means for introducing an oxygen gas into the processing chamber, the method comprising the steps of:
holding the substrate on the substrate holding surface;
introducing at least one of a heating gas and a cooling gas into a second space formed in the groove portion between the substrate and the dielectric portion;
changing a relative position of the substrate holder with respect to the processing chamber thereby to form, in the processing chamber, a space formed by the substrate holding surface and a surrounding portion provided in the processing chamber, the surrounding portion having a cylindrical portion with a circular cross-section perpendicular to an extendin

Assignees

• Canon Anelva Corp

Inventors

• Shimane Yoshimitsu
• Seino Takuya

Classifications

• H10P72/0434 Primary

  mainly by convection · CPC title

• C23C14/5853

  Oxidation · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C8/10

  Oxidising · CPC title

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title