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US-2024379487-A1 · Nov 14, 2024 · US
Method of producing bonded body and method of producing power module substrate
US9905437B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9905437-B2 |
| Application number | US-201414910110-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 18, 2014 |
| Priority date | Aug 26, 2013 |
| Publication date | Feb 27, 2018 |
| Grant date | Feb 27, 2018 |
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- Title
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Abstract
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A method of producing a bonded body is disclosed in which a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy are bonded to each other, the method including: a laminating step of laminating the ceramic member and the Cu member in a state where a Cu—P-based brazing filler material containing 3 mass % to 10 mass % of P and an active metal material are interposed therebetween; and a heating step of heating the ceramic member and the Cu member which are laminated.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of producing a bonded body in which a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy are bonded to each other, the method comprising: a laminating step of laminating the ceramic member and the Cu member in a state where a layer of a Cu—P-based brazing filler material containing 3 mass % to 10 mass % of P and a layer of an active metal material are interposed between the Cu member and the ceramic member; and a heating step of heating the ceramic member and the Cu member which are laminated while pressurizing the ceramic member and the Cu member which are laminated in a laminating direction at a pressure of 1 kgf/cm 2 to 35 kgf/cm 2 , wherein in the laminating step, the Cu—P-based brazing filler material is disposed directly adjacent to the ceramic member, and the active metal material is disposed directly adjacent to the Cu member. 2. The method of producing a bonded body according to claim 1 , wherein the Cu—P-based brazing filler material is any one selected from a Cu—P brazing filler material, a Cu—P—Sn brazing filler material, a Cu—P—Sn—Ni brazing filler material, and a Cu—P—Zn brazing filler material. 3. The method of producing a bonded body according to claim 1 , wherein the active metal material contains Ti. 4. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 1 . 5. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Cu or a Cu alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other, and the ceramic substrate and the metal layer are bonded to each other by the method of producing a bonded body according to claim 1 . 6. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Al or an Al alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 1 . 7. The method of producing a bonded body according to claim 1 , wherein the Cu—P-based brazing filler material is any one selected from a Cu—P brazing filler material, a Cu—P—Sn brazing filler material, a Cu—P—Sn—Ni brazing filler material, and a Cu—P—Zn brazing filler material. 8. The method of producing a bonded body according to claim 1 , wherein the active metal material contains Ti. 9. The method of producing a bonded body according to claim 2 , wherein the active metal material contains Ti. 10. The method of producing a bonded body according to claim 7 , wherein the active metal material contains Ti. 11. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 1 . 12. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 2 . 13. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 3 . 14. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Cu or a Cu alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other, and the ceramic substrate and the metal layer are bonded to each other by the method of producing a bonded body according to claim 1 . 15. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Cu or a Cu alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other, and the ceramic substrate and the metal layer are bonded to each other by the method of producing a bonded body according to claim 2 . 16. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Cu or a Cu alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other, and the ceramic substrate and the metal layer are bonded to each other by the method of producing a bonded body according to claim 3 . 17. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Al or an Al alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 1 . 18. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Al or an Al alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 2 . 19. A method of producing a power module substrate in which a circuit layer made of Cu or a Cu alloy is provided on a first surface of a ceramic substrate, and a metal layer made of Al or an Al alloy is provided on a second surface of the ceramic substrate, wherein the ceramic substrate and the circuit layer are bonded to each other by the method of producing a bonded body according to claim 3 .
Assignees
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Classifications
with tin as the next major constituent · CPC title
Alloys based on copper · CPC title
Copper · CPC title
Aluminium · CPC title
Metallic · CPC title
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Frequently asked questions
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- What does patent US9905437B2 cover?
- A method of producing a bonded body is disclosed in which a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy are bonded to each other, the method including: a laminating step of laminating the ceramic member and the Cu member in a state where a Cu—P-based brazing filler material containing 3 mass % to 10 mass % of P and an active metal material are interposed therebetwee…
- Who is the assignee on this patent?
- Mitsubishi Materials Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W40/255. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).