Photomask blank, resist pattern forming process, and method for making photomask

Patent metadata

Field	Value
Publication number	US-9904169-B2
Application number	US-201615089788-A
Country	US
Kind code	B2
Filing date	Apr 4, 2016
Priority date	Apr 7, 2015
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.

First claim

The invention claimed is:

1. A photomask blank comprising a chemically amplified negative resist film adapted for exposure to high-energy radiation and an antistatic film on the resist film, said resist film comprising
(A) a polymer comprising recurring units represented by the general formula (1) and recurring units having at least one fluorine atom,
(B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid,
(C) an acid generator, and
(D) a basic compound,

wherein R 1 is hydrogen or methyl, R 2 is hydrogen or a straight or branched C 1 -C 5 monovalent hydrocarbon group in which at least one of carbon-bonded hydrogen atoms may be substituted by hydroxyl, or in which a heteroatom selected from oxygen, sulfur and nitrogen may intervene in a carbon-carbon bond, R 3 is a straight or branched C 1 -C 5 monovalent hydrocarbon group in which at least one of carbon-bonded hydrogen atoms may be substituted by hydroxyl, or in which a heteroatom selected from oxygen, sulfur and nitrogen may intervene in a carbon-carbon bond, m is an integer of 1 to 3, n is an integer satisfying 0≦n≦5+2l−m, l is 0 or 1, and X 1 is a single bond, —C(═O)O— or —C(═O)NH—,
wherein the recurring units having at least one fluorine atom are units of at least one type selected from units having the general formulae (2) to (7):

wherein R 4 is each independently hydrogen, fluorine, methyl or trifluoromethyl, R 5a and R 5b are each independently hydrogen or a straight, branched or cyclic C 1 -C 10 alkyl group, R 6 is each independently hydrogen, a straight, branched or cyclic C 1 -C 15 monovalent hydrocarbon or fluorinated hydrocarbon group, or an acid labile group, with the proviso that in the monovalent hydrocarbon or fluorinated hydrocarbon group represented by R 6 , an ether bond (—O—) or carbonyl moiety (—C(═O)—) may intervene in a carbon-carbon bond, R 7 is a (s+1)-valent, cyclic C 3 -C 20 hydrocarbon or fluorinated hydrocarbon group, L is a single bond or an optionally substituted divalent linking group, A is each independently a (s+1)-valent, straight, branched or cyclic C 1 -C 20 hydrocarbon or fluorinated hydrocarbon group, with the proviso that at least one of R 6 and A in formula (7) contains fluorine, and s is an integer of 1 to 3.

2. The photomask blank of claim 1 wherein the base resin (B) comprises recurring units of at least one type selected from sulfonium salt units having the general formulae (a1), (a2), and (a3):

wherein R 12 is each independently hydrogen or methyl, R 13 is a single bond, phenylene group, —O—R 22 —, or —C(═O)—Z 2 —R 22 —, Z 2 is oxygen or NH, R 22 is a straight, branched or cyclic C 1 -C 6 alkylene, alkenylene or phenylene group which may contain a carbonyl (—CO—), ester (—COO—), ether (—O—) or hydroxyl moiety, L′ is a single bond or —Z 3 —C(═O)—O—, Z 3 is a straight, branched or cyclic C 1 -C 20 divalent hydrocarbon group which may be substituted with a heteroatom, Z 1 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—R 23 —, or —C(═O)—Z 4 —R 23 —, Z 4 is oxygen or NH, R 23 is a straight, branched or cyclic C 1 -C 6 alkylene, alkenylene or phenylene group which may contain a carbonyl, ester, ether or hydroxyl moiety, M − is a non-nucleophilic counter ion R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , and R 21 are each independently a straight C 1 -C 20 , branched or cyclic C 3 -C 20 monovalent hydrocarbon group in which at least one hydrogen atom may be replaced by a heteroatom selected from oxygen, sulfur, nitrogen and halogen, or in which a heteroatom selected from oxygen, sulfur and nitrogen may intervene, so that a hydroxyl group, cyano group, carbonyl group, ether bond, ester bond, sulfonic acid ester bond, carbonate bond, lactone ring, sultone ring, carboxylic anhydride, or haloalkyl group may form or intervene, or R 14 and R 15 may bond together to form a ring with the sulfur atom, or any two or more of R 16 , R 17 and R 18 or any two or more of R 19 , R 20 and R 21 may bond together to form a ring with the sulfur atom.

3. The photomask blank of claim 1 wherein the base resin (B) comprises recurring units having the general formula (UN-1):

wherein R 4 is hydrogen, fluorine, methyl or trifluoromethyl, R 5 is each independently hydrogen or a C 1 -C 6 alkyl group, B 1 is a single bond or a C 1 -C 10 alkylene group which may contain an ether bond, p is 0 or 1, r is an integer of 0 to 2, a is an integer satisfying a≦5+2r−b, and b is an integer of 1 to 5.

4. The photomask blank of claim 1 wherein the base resin (B) comprises recurring units of at least one type selected from units having the general formulae (UN-2) and (UN-3):

wherein p is each independently 0 or 1, R 4 is each independently hydrogen, fluorine, methyl or trifluoromethyl, B 1 is each independently a single bond or a C 1 -C 10 alkylene group which may contain an ether bond, R 8 is hydrogen, halogen, an optionally halo-substituted, straight, branched or cyclic C 2 -C 8 acyloxy group, an optionally halo-substituted, straight, branched or cyclic C 1 -C 6 alkyl group, or an optionally halo-substituted, straight, branched or cyclic C 1 -C 6 alkoxy group, K is hydrogen, a straight, branched or cyclic C 1 -C 10 monovalent aliphatic hydrocarbon group which may contain an ethereal oxygen atom, carbonyl moiety or carbonyloxy moiety at an intermediate of its chain, or an optionally substituted monovalent aromatic group, Rx and Ry are each independently hydrogen, a C 1 -C 15 alkyl group which may be substituted with hydroxyl or alkoxy, or an optionally substituted monovalent aromatic group, Rx and Ry may bond together to form a ring with the carbon atom to which they are attached, excluding that Rx and Ry are hydrogen at the same time, u is an integer of 1 to 3, v is an integer of 0 to 2, w is an integer satisfying w≦5+2v−u, X is hydrogen, a substituted or unsubstituted, straight, branched or cyclic C 1 -C 20 alkyl group, C 2 -C 20 alkylthioalkyl group, halogen, nitro, cyano, sulfinyl, or sulfonyl group, Y is a C 20 alkyl group or C 1 -C 20 acyl group, d is an integer of 0 to 5, t is an integer of 0 to 2, and c is an integer satisfying c≦5+2t−d.

5. The photomask blank of claim 1 wherein the base resin (B) comprises recurring units of at least one type selected from units having the general formulae (UN-4) and (UN-5):

wherein R 9 is hydrogen, an optionally halo-substituted C 1 -C 6 alkyl group or primary or secondary alkoxy group, or an optionally halo-substituted C 2 -C 7 alkylcarbonyloxy group, f is an integer of 0 to 6, R 10 is hydrogen, an optionally halo-substituted C 1 -C 6 alkyl group or primary or secondary alkoxy group, or an optionally halo-substituted C 2 -C 7 alkylcarbonyloxy group, and g is an integer of 0 to 4.

6. The photomask blank of claim 1 wherein the antistatic film comprises an amino acid.

7. The photomask blank of claim 6 wherein the amino acid has the general formula (8):

wherein R 101 and R 102 are each independently hydr

Assignees

• Shinetsu Chemical Co

Inventors

• Adachi Teppei
• Watanabe Satoshi
• Domon Daisuke
• Masunaga Keiichi

Classifications

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F1/80

  Etching · CPC title

• G03F1/50

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title

• G03F7/36

  Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma · CPC title