Photosensor and display device including the same

US9899558B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9899558-B2
Application numberUS-201615152980-A
CountryUS
Kind codeB2
Filing dateMay 12, 2016
Priority dateSep 23, 2015
Publication dateFeb 20, 2018
Grant dateFeb 20, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A disclosed photosensor includes: a first electrode layer including a reflection part having an inclination surface; a first semiconductor layer positioned on the first electrode layer; a second electrode layer positioned on the first semiconductor layer; and a first dielectric layer and a second dielectric layer sequentially positioned on the second electrode layer, wherein the first dielectric layer and the second dielectric layer have different dielectric constant values. Further, the disclosed display device includes a plurality of pixel areas positioned on a substrate, and a sensor unit formed in at least some pixel areas among the plurality of pixel areas.

First claim

Opening claim text (preview).

What is claimed is: 1. A photosensor comprising: a substrate; a first electrode layer positioned on the substrate and including a reflection part having an inclination surface, the reflection part reflecting light, and the inclination surface being inclined relative to a surface of the substrate; a first semiconductor layer positioned on the first electrode layer; a second electrode layer positioned on the first semiconductor layer; and a first dielectric layer and a second dielectric layer sequentially positioned on the second electrode layer, wherein the first dielectric layer and the second dielectric layer have different dielectric constant values, and wherein the first dielectric layer has a first dielectric constant value and the second dielectric layer has a second dielectric constant value, and the first dielectric constant value is greater than the second dielectric constant value. 2. The photosensor of claim 1 , wherein difference of the first dielectric constant value and the second dielectric constant value is in a range of 3 to 60. 3. The photosensor of claim 1 , wherein the first dielectric constant value is in a range of 10 to 60. 4. The photosensor of claim 1 , wherein the first dielectric layer includes at least one selected from the group consisting of hafnium oxide (HfO 2 ), yttrium oxide (Y 2 O 3 ), strontium oxide (SrO), barium oxide (BaO), titanium oxide (TiO), and combinations thereof. 5. The photosensor of claim 1 , wherein the second dielectric constant value is 10 or less. 6. The photosensor of claim 1 , wherein the second dielectric layer includes at least one selected from the group consisting of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), and combinations thereof. 7. The photosensor of claim 1 , wherein the reflection part includes protrusions and depressions. 8. The photosensor of claim 1 , wherein the second electrode layer includes at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and combinations thereof. 9. The photosensor of claim 1 , wherein the first semiconductor layer includes at least one selected from the group consisting of a hydrogenated amorphous silicon, a polysilicon, and an oxide semiconductor. 10. The photosensor of claim 9 , wherein the oxide semiconductor includes at least one selected from the group consisting of oxides of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin (Sn). 11. A display device comprising: a plurality of pixel areas positioned on a substrate; and a sensor unit formed in at least some pixel areas among the plurality of pixel areas, wherein the sensor unit includes a photosensor which comprises: a first electrode layer positioned on the substrate and including a reflection part having an inclination surface, the reflection part reflecting light, and the inclination surface being inclined relative to a surface of the substrate; a first semiconductor layer positioned on the first electrode layer; a second electrode layer positioned on the first semiconductor layer; and a first dielectric layer and a second dielectric layer sequentially positioned on the second electrode layer, wherein the first dielectric layer and the second dielectric layer have different dielectric constant values, and wherein the first dielectric layer has a first dielectric constant value and the second dielectric layer has a second dielectric constant value, and the first dielectric constant value is greater than the second dielectric constant value. 12. The display device of claim 11 , wherein a pixel area of the plurality of pixel areas comprises: a light emission part; and a thin film transistor electrically connected to the light emission part, wherein the thin film transistor comprises: a second semiconductor layer, and a source electrode and a drain electrode positioned on the second semiconductor layer, partially overlapping the second semiconductor layer, and separated from each other. 13. The display device of claim 12 , wherein the second semiconductor layer is an oxide semiconductor layer including at least one selected from the group consisting of oxides of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin (Sn). 14. The display device of claim 13 , wherein the second semiconductor layer comprises indium-gallium-zinc oxide, and the first semiconductor layer comprises hydrogenated amorphous silicon. 15. The display device of claim 12 , wherein the source electrode and the drain electrode are positioned at the same layer as the first electrode layer. 16. The display device of claim 11 , wherein the photosensor is a compensation sensor. 17. The display device of claim 11 , wherein the photosensor is a touch sensor. 18. The display device of claim 11 , wherein the reflection part includes protrusions and depressions.

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9899558B2 cover?
A disclosed photosensor includes: a first electrode layer including a reflection part having an inclination surface; a first semiconductor layer positioned on the first electrode layer; a second electrode layer positioned on the first semiconductor layer; and a first dielectric layer and a second dielectric layer sequentially positioned on the second electrode layer, wherein the first dielectri…
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01L31/153. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).