Image sensor device and fabricating method thereof

Patent metadata

Field	Value
Publication number	US-2015171125-A1
Application number	US-201314109318-A
Country	US
Kind code	A1
Filing date	Dec 17, 2013
Priority date	Dec 17, 2013
Publication date	Jun 18, 2015
Grant date	—

Abstract

An image sensor device includes a substrate, a photo sensitive element, a first dielectric structure and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The photo sensitive element is formed on the first side of the substrate for receiving incident light transmitted through the substrate. The first dielectric structure is formed on the second side of the substrate. At least one portion of the convex dielectric lens is located in the first dielectric structure. The convex dielectric lens has a convex side oriented toward the incident light and a planer side oriented toward the photo sensitive element.

First claim

What is claimed is:

1 . An image sensor device, comprising:
a substrate having a first side and a second side opposite to the first side; a photo sensitive element on the first side of the substrate for receiving incident light transmitted through the substrate; a first dielectric structure disposed on the second side of the substrate; and a convex dielectric lens at least one portion of which is located in the first dielectric structure, the convex dielectric lens having a convex side oriented toward the incident light and a planer side oriented toward the photo sensitive element.

2 . The image sensor device of claim 1 , wherein a refractive index of the first dielectric structure is greater than a refractive index of the convex dielectric lens.

3 . The image sensor device of claim 1 , further comprising:
a grid on the first dielectric structure; and a second dielectric structure on the first dielectric structure, the convex dielectric lens and the grid, the second dielectric structure at least partially covering the convex dielectric lens.

4 . The image sensor device of claim 3 , wherein a refractive index of the convex dielectric lens is greater than a refractive index of the second dielectric structure.

5 . The image sensor device of claim 3 , wherein a diameter of the convex dielectric lens is greater than or substantially equal to a distance between two opposite sides of the grid.

6 . The image sensor device of claim 3 , further comprising:
a color filter on the second dielectric structure; and a micro-lens on the color filter.

7 . An image sensor device, comprising:
a substrate having a first side and a second side opposite to the first side; a photo sensitive element on the first side of the substrate for receiving incident light transmitted through the substrate; a first dielectric layer disposed on the second side of the substrate; a second dielectric layer directly on the first dielectric layer, the second dielectric layer having a recess therein; and a convex dielectric lens on the first dielectric layer and at least one portion of which located in the recess, the convex dielectric lens having a convex side oriented toward the incident light and a planer side oriented toward the photo sensitive element.

8 . The image sensor device of claim 7 , wherein a refractive index of the first dielectric layer is greater than a refractive index of the convex dielectric lens.

9 . The image sensor device of claim 7 , further comprising:
a grid on the second dielectric layer; and a dielectric structure on the second dielectric layer, the convex dielectric lens and the grid, the dielectric structure at least partially covering the convex dielectric lens.

10 . The image sensor device of claim 9 , wherein a refractive index of the convex dielectric lens is greater than a refractive index of the dielectric structure.

11 . The image sensor device of claim 9 , wherein a diameter of the convex dielectric lens is greater than or substantially equal to a distance between two opposite sides of the grid.

12 . The image sensor device of claim 9 , further comprising:
a color filter on the dielectric structure; and a micro-lens on the color filter.

13 . A method, comprising:
providing a substrate having a first side and a second side opposite to the first side; forming a photo sensitive element on the first side of the substrate for receiving incident light transmitted through the substrate; forming a first dielectric structure on the second side of the substrate; forming a recess by removing a portion of the first dielectric structure; and forming a convex dielectric lens in the recess of the first dielectric structure, the convex dielectric lens having a convex side oriented toward the incident light and a planer side oriented toward the photo sensitive element.

14 . The method of claim 13 , wherein a refractive index of the first dielectric structure is greater than a refractive index of the convex dielectric lens.

15 . The method of claim 13 , further comprising:
forming a grid on the first dielectric structure; and forming a second dielectric structure on the first dielectric structure, the convex dielectric lens and the grid, the second dielectric structure at least partially covering the convex dielectric lens.

16 . The method of claim 15 , wherein a refractive index of the convex dielectric lens is greater than a refractive index of the second dielectric structure.

17 . The method of claim 15 , wherein a diameter of the convex dielectric lens is greater than or substantially equal to a distance between two opposite sides of the grid.

18 . The method of claim 15 , further comprising:
forming a color filter on the second dielectric structure; and forming a micro-lens on the color filter.

19 . The method of claim 13 , wherein forming the first dielectric structure comprises:
forming a first dielectric layer on the second side of the substrate; and forming a second dielectric layer directly on the first dielectric layer; wherein the recess of the first dielectric structure is in the second dielectric layer, and the convex dielectric lens is formed at least partially in the recess of the second dielectric layer.

20 . The method of claim 13 , further comprising forming a pixel circuit on the first side of the substrate for electrical interconnecting with the photo sensitive element.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Jangjian Shiu-Ko
• Wu Chih-Nan
• Lin Chun-Che
• Lin Yu-Ku

Classifications

• H10F39/8053

  Colour filters · CPC title

• H10F39/807

  Pixel isolation structures · CPC title

• H10F39/182

  Colour image sensors · CPC title

• H10F39/024

  of coatings or optical elements · CPC title

• H10F39/8063 Primary

  Microlenses · CPC title