Semiconductor element, method for fabricating the same, and semiconductor device including the same
US-2016300921-A1 · Oct 13, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/512 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 432 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 53 |
| 2016 | 53 |
| 2017 | 70 |
| 2018 | 52 |
| 2019 | 50 |
| 2020 | 48 |
| 2021 | 33 |
| 2022 | 23 |
| 2023 | 23 |
| 2024 | 21 |
| 2025 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Self-aligned contacts
US-9466565-B2 · Oct 11, 2016 · US
Non-volatile semiconductor memory with nitride sidewall contacting nitride layer of ONO gate stack and methods for producing the same
US-9461138-B2 · Oct 4, 2016 · US
Method of manufacturing a silicon carbide semiconductor device
US-9450060-B2 · Sep 20, 2016 · US
Nonvolatile memory transistor and device including the same
US-9379319-B2 · Jun 28, 2016 · US
Selective gate oxide properties adjustment using fluorine
US-9299856-B2 · Mar 29, 2016 · US
Formation of gate sidewall structure
US-9252221-B2 · Feb 2, 2016 · US
LDMOS with improved breakdown voltage
US-9219147-B2 · Dec 22, 2015 · US
III-N material structure for gate-recessed transistors
US-9209290-B2 · Dec 8, 2015 · US
High density MOSFET array with self-aligned contacts enhancement plug and method
US-9196701-B2 · Nov 24, 2015 · US
Lateral oxidation of nfet high-k gate stacks
US-2015318177-A1 · Nov 5, 2015 · US
Aluminum substrate for a thin film transistor
US-2015318403-A1 · Nov 5, 2015 · US
Semiconductor device dielectric interface layer
US-9177784-B2 · Nov 3, 2015 · US
Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics
US-9178031-B2 · Nov 3, 2015 · US
Device Having Sloped Gate Profile and Method of Manufacture
US-2015287798-A1 · Oct 8, 2015 · US
Spacer shaper formation with conformal dielectric film for void free pmd gap fill
US-2015287804-A1 · Oct 8, 2015 · US
Semiconductor device and method for fabricating the same
US-2015287738-A1 · Oct 8, 2015 · US
Semiconductor device having metal carbon nitride electrodes with different work functions
US-9153586-B2 · Oct 6, 2015 · US
Array substrate, method for manufacturing the same, and display device
US-2015279870-A1 · Oct 1, 2015 · US
Self-aligned contacts
US-2015270216-A1 · Sep 24, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/512?
- CPC H01L29/512 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/512 (Electricity)?
- Our database includes 432 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/512 growing?
- Publication counts under this code: 21 in 2024 vs 6 in 2025 (latest complete years).