Device and method for manufacturing a device with a barrier layer

Patent metadata

Field	Value
Publication number	US-9899325-B2
Application number	US-201414453629-A
Country	US
Kind code	B2
Filing date	Aug 7, 2014
Priority date	Aug 7, 2014
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. The forming of the barrier layer includes depositing a solution comprising a metal complex over the substrate and at least partially decomposing of the ligand of the metal complex.

First claim

What is claimed is:

1. A method of forming a device, the method comprising:
forming a metal layer over a substrate; and
forming at least one barrier layer, the forming comprising:
depositing a liquid solution comprising a metal complex comprising a central metal atom or ion and at least one organic ligand over the substrate; and
at least partially decomposing the at least one organic ligand of the metal complex,

wherein the organic ligand is an oximate ligand having the structure represented by Formula I

wherein R 1 is selected from a group consisting of hydrogen and C 1 -C 4 alkyl and R 2 is selected from a group consisting of hydrogen, C 1 -C 6 alkyl, C 6 -C 14 aryl, and alkylaryl.

2. The method of claim 1 ,
wherein the solution comprises
a solvent; and
about a maximum soluble amount of metal complex in the solvent.

3. The method of claim 1 ,
wherein the metal complex is decomposed at a temperature below about 250° C.

4. The method of claim 1 ,
wherein the device is a semiconductor device.

5. The method of claim 1 ,
wherein the substrate comprises a module with at least one semiconductor device;
wherein the barrier layer is formed over the semiconductor device.

6. The method of claim 1 ,
wherein the substrate comprises a module with a plurality of semiconductor devices;
wherein the barrier layer is formed over the semiconductor devices.

7. The method of claim 1 ,
wherein the substrate having a surface and a contact hole extending from the surface of the substrate into a body of the substrate, the contact hole having at least one side wall;
wherein the barrier layer is formed over the at least one side wall of the contact hole; and
wherein the contact hole is at least partially filled with the metal layer.

8. The method of claim 1 ,
wherein the metal layer is formed of at least one of a noble metal or an oxidable metal.

9. The method of claim 1 ,
wherein the barrier layer is formed as an adhesion promoting layer for the metal layer between the metal layer and the substrate.

10. The method of claim 1 ,
wherein the barrier layer is formed as a ceramic layer.

11. The method of claim 1 ,
wherein the metal layer is formed over the barrier layer.

12. The method of claim 1 ,
wherein the barrier layer is formed over the metal layer.

13. The method of claim 1 ,
wherein the depositing comprises
depositing the solution over the substrate by at least one of spin coating, dip coating, spray coating, inkjet printing, screen printing, or pad printing.

14. The method of claim 1 , further comprising:
annealing the solution using at least one of a solvent or a thermal anneal, after the depositing.

15. A method of forming a device, the method comprising:
forming a first barrier layer over a substrate, the forming of the first barrier layer comprising:
depositing a first liquid solution comprising a metal complex comprising a central metal atom or ion and at least one organic ligand over the substrate;
at least partially decomposing the at least one organic ligand of the metal complex,

forming a metal layer over the first barrier layer; and
forming a second barrier layer over the metal layer, the forming of the second barrier layer comprising:
depositing a second liquid solution comprising a metal complex comprising a central metal atom or ion and at least one organic ligand over the substrate; and
at least partially decomposing the at least one organic ligand of the metal complex.

16. The method of claim 15 , wherein the first liquid solution and the second liquid solution are the same.

17. The method of claim 15 ,
wherein the organic ligand is an oximate ligand having the structure represented by Formula I

wherein R 1 is selected from a group consisting of hydrogen and C 1 -C 4 alkyl and R 2 is selected from the group consisting of hydrogen, C 1 -C 6 alkyl, C 6 -C 14 aryl, and alkylaryl.

18. The method of claim 15 , further comprising forming a third barrier layer between the first barrier layer and the metal layer, the forming of the third barrier layer comprising:
depositing a third liquid solution comprising a metal complex comprising a central metal atom or ion and at least one organic ligand over the substrate, wherein the third liquid solution is different from the first solution; and
at least partially decomposing the at least one organic ligand of the metal complex.

19. The method of claim 18 , wherein the metal complex of the third liquid solution comprises a central metal atom or ion similar to a metal in the metal layer.

Assignees

• Infineon Technologies Ag

Inventors

• Joshi Ravi

Classifications

• C23C18/143

  Radiation by light, e.g. photolysis or pyrolysis · CPC title

• C23C18/08

  characterised by the deposition of metallic material · CPC title

• C23C18/145

  Radiation by charged particles, e.g. electron beams or ion irradiation · CPC title

• C23C18/1291

  by heating of the substrate · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title