Resist under layer film composition and patterning process

Patent metadata

Field	Value
Publication number	US-9899218-B2
Application number	US-201615149680-A
Country	US
Kind code	B2
Filing date	May 9, 2016
Priority date	Jun 4, 2015
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3). There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.

First claim

What is claimed is:

1. A resist under layer film composition comprising a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3),

wherein R 1 and R 2 represent a hydrogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 8 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aralkyl group having 7 to 10 carbon atoms, in which the alkyl group, the alkenyl group, the aryl group, and the aralkyl group may contain a fluorine atom(s) and may further contain a hydroxyl group, an alkoxy group, an acyl group, a sulfoxide group, a sulfo group, or an ester bond, and 10% or more of a total of R 1 and R 2 are groups containing at least one fluorine atom; R 3 , R 4 , R 11 , and R 12 represent a hydrogen atom, a hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms, in which the alkyl group, the alkenyl group, and the aryl group may contain a hydroxyl group, an alkoxy group, an acyloxy group, an ether group, or a sulfide group; R 18 and R 19 represent a halogen atom or the same group as R 3 , R 4 , R 11 , and R 12 ; R 5 , R 6 , R 13 , R 14 , R 20 , and R 21 represent a hydrogen atom, or R 5 , R 13 , and R 20 may bond to R 6 , R 14 , and R 21 respectively to form an ether bond; R 7 and R 15 represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms, in which the alkyl group, the alkenyl group, and the aryl group may contain a hydroxyl group, an alkoxy group, an acyloxy group, an ether group, a sulfide group, a chloro group, or a nitro group; R 9 , R 10 , R 16 , and R 17 represent a hydrogen atom, an acid-labile group, a glycidyl group, or a linear, branched, or cyclic alkyl, acyl, or alkoxycarbonyl group having 1 to 10 carbon atoms; X 1 , X 2 , and X 3 represent a single bond or a linear, branched, or cyclic divalent hydrocarbon group having 1 to 38 carbon atoms and optionally containing a hydroxyl group, a carboxyl group, an ether group, or a lactone ring, when X 1 is a divalent hydrocarbon group, R 5 and R 6 may bond to carbon atoms in X 1 to form an ether bond, when X 2 is a divalent hydrocarbon group, R 13 and R 14 may bond to carbon atoms in X 2 to form an ether bond, and when X 3 is a divalent hydrocarbon group, R 20 and R 21 may bond to carbon atoms in X 3 to form an ether bond; and a, b, c, d, g, h, i, j, k, l, m, and n are each 1 or 2.

2. The resist under layer film composition according to claim 1 , comprising the novolak resin having the repeating unit shown by the formula (1), the novolak resin having the repeating unit shown by the formula (2), and the bisnaphthol derivative shown by the formula (3).

3. The resist under layer film composition according to claim 1 , wherein the novolak resin having the repeating unit shown by the formula (1) contains one or more groups selected from the formulae (4)-1 to (4)-5 as R 1 and/or R 2 in the formula (1),

wherein R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R 0 represents a hydrogen atom, a methyl group, an acetyl group, or a trifluoroacetyl group; Rf represents a fluorine atom, a linear, branched, or cyclic alkyl group having 1 to 9 carbon atoms, an alkenyl group having 2 to 8 carbon atoms, an aryl group having 6 to 10 carbon, an aralkyl group having 7 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms, in which these groups contain at least one fluorine atom and may further contain a hydroxyl group or an alkoxy group; R 22 represents a hydrogen atom, a methyl group, or an ethyl group; and R 23 and R 24 represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms.

4. The resist under layer film composition according to claim 2 , wherein the novolak resin having the repeating unit shown by the formula (1) contains one or more groups selected from the formulae (4)-1 to (4)-5 as R 1 and/or R 2 in the formula (1),

wherein R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R 0 represents a hydrogen atom, a methyl group, an acetyl group, or a trifluoroacetyl group; Rf represents a fluorine atom, a linear, branched, or cyclic alkyl group having 1 to 9 carbon atoms, an alkenyl group having 2 to 8 carbon atoms, an aryl group having 6 to 10 carbon, an aralkyl group having 7 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms, in which these groups contain at least one fluorine atom and may further contain a hydroxyl group or an alkoxy group; R 22 represents a hydrogen atom, a methyl group, or an ethyl group; and R 23 and R 24 represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms.

5. The resist under layer film composition according to claim 2 , wherein a total amount of the novolak resin having the repeating unit shown by the formula (2) and the bisnaphthol derivative shown by the formula (3) is 5 to 100 parts by mass with respect to 1 part by mass of the novolak resin having the repeating unit shown by the formula (1).

6. The resist under layer film composition according to claim 3 , wherein a total amount of the novolak resin having the repeating unit shown by the formula (2) and the bisnaphthol derivative shown by the formula (3) is 5 to 100 parts by mass with respect to 1 part by mass of the novolak resin having the repeating unit shown by the formula (1).

7. The resist under layer film composition according to claim 4 , wherein a total amount of the novolak resin having the repeating unit shown by the formula (2) and the bisnaphthol derivative shown by the formula (3) is 5 to 100 parts by mass with respect to 1 part by mass of the novolak resin having the repeating unit shown by the formula (1).

8. The resist under layer film composition according to claim 1 , further comprising an organic solvent.

9. The resist under layer film composition according to claim 1 , further comprising an acid generator and/or a crosslinking agent.

10. A patterning process for forming a pattern in a substrate by lithography, comprising: forming a resist under layer film on a substrate to be processed by using the resist under layer film composition according to claim 1 ; forming a silicon-containing middle layer film on the resist under layer film by using a silicon-containing middle layer film composition; forming a resist upper layer film on the silicon-containing middle layer film by using a resist upper layer film composition; forming a resist pattern in the resist upper layer film by exposure of a pattern circuit region of the resist upper layer film and development; transferring the pattern to the silicon-containing middle layer film by etching using the resist upper layer film having the formed resist pattern as a mask; transferring the pattern to the resist under layer film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask; forming the pattern in the substrate to be processed by etching using the resist under layer film having the transferred pattern as a mask.

11.

Assignees

• Shinetsu Chemical Co

Inventors

• Hatakeyama Jun
• Watanabe Takeru
• Kori Daisuke

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/40

  of masks comprising inorganic materials · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P50/283

  by chemical means · CPC title