Method for pretreatment of base substrate and method for manufacturing layered body using pretreated base substrate

Patent metadata

Field	Value
Publication number	US-9896780-B2
Application number	US-201414905559-A
Country	US
Kind code	B2
Filing date	Jul 25, 2014
Priority date	Jul 26, 2013
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film.
The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of Al A Ga B In C N; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

First claim

The invention claimed is:

1. A method for manufacturing an epitaxial layered body, the method comprising the successive steps of:
(a) preparing a base substrate and arranging the base substrate in an epitaxial growth apparatus, wherein the base substrate comprises a base member and a layer of a first group III nitride single crystal arranged over the base member, the layer of the first group III nitride single crystal being an uppermost layer of the base substrate and having a surface roughness of no more than 5 nm in terms of root mean square roughness; and wherein the first group III nitride single crystal is represented by a composition formula of Al A Ga B In C N satisfying A+B+C=1.0, 0.5≦A≦1.0, 0≦B≦0.5, and 0≦C≦0.5; and wherein a material of the base member is same as or different from the layer of the first group III nitride single crystal; and wherein the base substrate is arranged in the epitaxial growth apparatus in a manner such that the layer of the first group III nitride single crystal comes to an uppermost surface;
(b) ramping a temperature of the base substrate to a temperature of no less than 1000° C. in a second mixed gas atmosphere in the apparatus, wherein the second mixed gas atmosphere comprises hydrogen gas and nitrogen gas;
(c) heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes in a first mixed gas atmosphere in the apparatus, wherein the first mixed gas atmosphere comprises hydrogen gas and nitrogen gas;
(d) controlling the temperature of the base substrate at a predetermined growth temperature in a third mixed gas atmosphere in the apparatus, wherein the third mixed gas atmosphere comprises hydrogen gas and nitrogen gas;
(e) supplying one or more raw material gas for growth selected from a group comprising at least a group III raw material gas, a nitrogen source gas, and a dopant raw material gas, and epitaxially growing a layer of a second group III nitride single crystal by chemical vapor phase epitaxy on the layer of the first group III nitride single crystal without growing a buffer layer, while controlling the temperature of the base substrate at the predetermined growth temperature, in the apparatus,
wherein the second group III nitride single crystal comprises Al and has an Al composition of 0.7 to 1.0.

2. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the first mixed gas atmosphere comprises 30 to 95 volume % of hydrogen gas and 5 to 70 volume % of nitrogen gas in a standard state.

3. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the second mixed gas atmosphere comprises 30 to 95 volume % of hydrogen gas and 5 to 70 volume % of nitrogen gas in the standard state.

4. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the temperature range of the heating in step (c) does not include the predetermined growth temperature at which the layer of the second group III nitride single crystal is to be grown in step (e).

5. The method for manufacturing the epitaxial layered body according to claim 4 ,
wherein the third mixed gas atmosphere comprises 30 to 95 volume % of hydrogen gas and 5 to 70 volume % of nitrogen gas in the standard state.

6. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the first group III nitride single crystal is an aluminum nitride single crystal.

7. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the second group III nitride single crystal is grown by a metalorganic vapor phase epitaxy method.

8. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the layer of the second group III nitride single crystal is grown at a temperature of no less than 1050° C. and less than 1100° C.

9. The method for manufacturing the epitaxial layered body according to claim 4 , comprising the successive steps of:
putting the base substrate under an atmosphere consisting of hydrogen gas for 10 seconds to 3 minutes, after the step (d); and
supplying raw material gases.

10. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the second group III nitride single crystal is represented by a composition formula of:
Al X Ga Y In Z N

wherein X, Y, and Z satisfy X+Y+Z=1.0, 0.5≦X≦1.0, 0≦Y≦0.5, and Z=0.

11. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein in the step (a), the uppermost surface of the base substrate is an AlN single crystal.

12. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein a value of a full width at half maximum of an X-ray rocking curve measured for (002) plane of the layer of the first group III nitride single crystal is no more than 1000 arcsec in the step (a).

13. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein a value of a full width at half maximum of an X-ray rocking curve measured for (102) plane of the layer of the first group III nitride single crystal is no more than 2000 arcsec in the step (a).

14. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein a value of a full width at half maximum of an X-ray rocking curve measured for (002) plane of the layer of the first group III nitride single crystal is no more than 300 arcsec in the step (a).

15. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein a value of a full width at half maximum of an X-ray rocking curve measured for (102) plane of the layer of the first group III nitride single crystal is no more than 300 arcsec in the step (a).

16. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the first mixed gas and the second mixed gas have a same mixture ratio.

17. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the first mixed gas and the third mixed gas have a same mixture ratio when the predetermined growth temperature in the step (d) is 1000 to 1250° C.

18. The method for manufacturing the epitaxial layered body according to claim 1 ,
wherein the first mixed gas and the third mixed gas have different mixture ratio when the predetermined growth temperature in the step (d) is outside a range of 1000 to 1250° C.

Assignees

• Stanley Electric Co Ltd

Inventors

• Furuya Hiroshi
• Obata Toshiyuki

Classifications

• H10P70/10

  Cleaning before device manufacture, i.e. Begin-Of-Line process · CPC title

• H10P14/3458

  Monocrystalline · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2925

  Surface structures · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title