Fin field-effct transistors and fabrication method thereof
US-2015348966-A1 · Dec 3, 2015 · US
US9896764B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9896764-B2 |
| Application number | US-201013391923-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2010 |
| Priority date | Sep 4, 2009 |
| Publication date | Feb 20, 2018 |
| Grant date | Feb 20, 2018 |
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The present invention provides a method for forming a siliceous film. According to the method, a siliceous film having a hydrophilic surface can be formed from a polysilazane compound at a low temperature. In the method, a composition containing a polysilazane compound and a silica-conversion reaction accelerator is applied on a substrate surface to form a polysilazane film, and then a polysilazane film-treatment solution is applied thereon so that the polysilazane compound can be converted into a siliceous film at 300° C. or less. The polysilazane film-treatment solution contains a solvent, hydrogen peroxide and an alcohol.
Opening claim text (preview).
The invention claimed is: 1. A siliceous film formation method comprising a polysilazane-film formation step, in which a composition comprising a polysilazane compound and a silica-conversion reaction accelerator is applied, by spin coating, on a substrate surface to form a polysilazane film; a promoter application step, in which a polysilazane film-treatment solution is applied by casting on said polysilazane film; and a hardening step, in which said polysilazane compound is converted into a siliceous film at a temperature of 300° C. or less; wherein said polysilazane film-treatment solution comprises a solvent, 0.5 to 10 wt% of hydrogen peroxide and 25 to 98 wt% of an alcohol, based on the total weight thereof. 2. The siliceous film formation method according to claim 1 , wherein said polysilazane compound is a perhydropolysilazane compound. 3. The siliceous film formation method according to claim 1 , wherein said silica-conversion reaction accelerator is selected from a metal carboxylate, a N-heterocyclic compound and an amine compound. 4. The siliceous film formation method according to claim 1 , wherein said alcohol is selected from the group consisting of monools, diols and oxyethers. 5. The siliceous film formation method according to claim 1 , wherein said solvent is water. 6. The siliceous film formation method according to claim 1 , wherein said hardening step is carried out at room temperature. 7. A polysilazane film-treatment solution which is applied on a polysilazane film formed by applying, by spin coating, a composition containing a polysilazane compound and a silica-conversion reaction accelerator, so as to promote conversion of the polysilazane compound into silica; characterized by comprising a solvent, 0.5 to 10 wt% of hydrogen peroxide and 25 to 98 wt% of an alcohol, based on the total weight thereof. 8. The method of claim 1 , where the alcohol can have 1 to 8 carbon atoms. 9. The composition of claim 7 , where the alcohol is selected from the group consisting of monools, diols and oxyethers. 10. The composition of claim 7 , where the alcohol can have 1 to 8 carbon atoms. 11. The composition of claim 7 , where the solvent is water. 12. The composition of claim 7 , where the alcohol is selected from methanol, ethanol, n-propanol, iso-propanol, butanol, hexanol octanol, ethylene glycol, propylene glycol, 1-methoxy-2-propanol, 2-ethoxyethanol and mixtures thereof. 13. The method of claim 1 , where the alcohol is selected from methanol, ethanol, n-propanol, iso-propanol, butanol, hexanol octanol, ethylene glycol, propylene glycol, 1-methoxy-2-propanol, 2-ethoxyethanol and mixtures thereof.
introduced into a nitride material, e.g. changing SiN to SiON · CPC title
the material being a silicon oxide, e.g. SiO2 · CPC title
the compound being a silazane · CPC title
Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title
Oxides, e.g. ceramics · CPC title
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