Method for forming insulating film

Patent metadata

Field	Value
Publication number	US-9165818-B2
Application number	US-201213984925-A
Country	US
Kind code	B2
Filing date	Feb 17, 2012
Priority date	Feb 18, 2011
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

[Problem] To provide a method capable of forming an insulating film having homogeneous and high bulk density and less suffering defects.
[Means for solving] A substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.

First claim

The invention claimed is:

1. A method for forming an insulating film, comprising
(1) a step of coating with silicon dioxide fine particles, in which a substrate is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium;
(2) a step of coating with polysilazane, in which the substrate surface coated with the silicon dioxide dispersion is further coated with a polysilazane composition; and
(3) step of heating, in which the substrate coated with the polysilazane composition is heated, so as to covert the polysilazane into silicon dioxide and thereby to form an insulating film made of the silicon dioxide fine particles and the silicon dioxide derived from the polysilazane.

2. The method according to claim 1 for forming an insulating film, wherein the step of heating is carried out at a temperature of 200 to 1500° C.

3. The method according to claim 1 for forming an insulating film, wherein the step of heating is carried out in an atmosphere containing water vapor.

4. The method according to claim 1 for forming an insulating film, wherein the weight ratio between the silicon contained in the coated silicon dioxide dispersion and that in the coated polysilazane composition is in the range of 1:15 to 6:1 per unit area of the substrate.

5. The method according to claim 1 for forming an insulating film, further comprising
a step of additional heating, in which the substrate is further heated in an inert gas atmosphere after the step of heating.

6. The method according to claim 1 for forming an insulating film, furthermore comprising
a step of preliminary heating, in which the substrate is heated to evaporate at least a part of the dispersion medium after the step of coating with silicon dioxide fine particles and before the step of coating with polysilazane.

7. The method according to claim 1 for forming an insulating film, wherein the substrate has a trench structure for insulating electronic parts and the formed insulating film constitutes a trench isolation structure.

8. The method according to claim 1 for forming an insulating film, wherein the insulating film serves as an inter-metal dielectric film or a pre-metal dielectric film.

9. A silicon dioxide fine particle dispersion used in the method according to claim 1 for forming an insulating film, containing
silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium.

10. The silicon dioxide fine particle dispersion according to claim 9 , wherein the content of the silicon dioxide fine particles is in the range of 2 to 30 wt % based on the total weight of the dispersion.

11. The silicon dioxide fine particle dispersion according to claim 9 , wherein the polymer is selected from the group consisting of acrylic acid polymer, methacrylic acid polymer, polyvinylpyrrolidone, and derivatives thereof.

12. The silicon dioxide fine particle dispersion according to claim 1 , wherein the content of the polymer is in the range of 1 to 10 wt % based on the total weight of the dispersion.

13. The silicon dioxide fine particle dispersion according to claim 9 , wherein the surfactant is selected from the group consisting of alkylsulfonic acids and ethylene oxide type surfactants.

14. The silicon dioxide fine particle dispersion according to claim 9 , wherein the content of the surfactant is in the range of 0.01 to 5 wt % based on the total weight of the dispersion.

Assignees

• Takano Yusuke
• Nagahara Tatsuro
• Ninad Shinde
• Iwata Takafumi
• Merck Patent Gmbh

Inventors

• Takano Yusuke
• Nagahara Tatsuro
• Ninad Shinde
• Iwata Takafumi

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title

• H10P14/6519

  the substance being oxygen · CPC title

• H10P14/6342 Primary

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title