Enhanced deep ultraviolet photodetector and method thereof

Patent metadata

Field	Value
Publication number	US-9893227-B2
Application number	US-201615181074-A
Country	US
Kind code	B2
Filing date	Jun 13, 2016
Priority date	May 24, 2013
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A photodiode for detecting photons comprising a substrate; first semiconducting region suitable for forming a contact thereon; a first contact; a second semiconducting region comprising an absorption region for the photons and being formed of a semiconductor having one or more of a high surface recombination velocity or a high interface recombination velocity; a second contact operatively associated with the second region; the first semiconducting region and the second semiconducting region forming a first interface; the second semiconducting region being configured such that reverse biasing the photodiode between the first and second contacts results in the absorption region having a portion depleted of electrical carriers and an undepleted portion at the reverse bias point of operation; the undepleted portion being smaller than the absorption depth for photons; whereby the depletion results in the creation of an electric field and photogenerated carriers are collected by drift; and a method of making.

First claim

The invention claimed is:

1. A photodiode for detecting photons in deep ultraviolet energy range comprising:
a substrate;
a first semiconducting region operatively associated with the substrate suitable for forming a contact thereon;
a first contact operatively associated with the first semiconducting region that collects first carriers;
a second semiconducting region comprising an absorption region for the photons in the deep ultraviolet energy range impinging upon an absorption interface of the absorption region; the second semiconducting region being formed of a semiconductor having one or more of a high surface recombination or a high interface recombination for carriers generated by deep ultraviolet photons and being suitable for forming a contact thereon;
a second contact that collects second carriers operatively associated with the second semiconducting region;
an intermediate semiconducting region between the first semiconducting region and the second semiconducting region wherein carrier multiplication occurs by impact ionization;
a first interface between the first semiconducting region and the intermediate semiconducting region;
a second interface between the second semiconducting region and the intermediate semiconducting region;
doping of the second semiconducting region being less than doping of the first semiconducting region such that depletion occurs to a greater extent towards the absorption interface upon which the photons impinge in the second semiconducting region than in the first semiconducting region upon increasing reverse bias; the second semiconducting region having a doping concentration such that reverse biasing the photodiode between the first and second contacts produces an undepleted portion adjacent to the absorption interface having a thickness less than an absorption depth from the absorption interface so that recombination of carriers is mitigated, and a depleted portion; the undepleted portion being located adjacent to the depleted portion such that a majority of the photons impinging upon the second semiconducting region are absorbed in the depleted portion and converted to carriers and such that with the increasing reverse bias, the depleted portion increases in thickness towards the absorption interface such that the undepleted portion becomes smaller than the absorption depth and therefore deep ultraviolet photo-generated carriers are collected more efficiently instead of being lost to recombination at the absorption interface;
the second semiconducting region having the doping concentration that varies with thickness such that the doping concentration increases from the second interface to the absorption interface resulting in a diminishing electric field from the second interface to the absorption interface; the undepleted portion being sufficiently doped to create an N or P type material and remain undepleted during reverse biasing;
whereby the second carriers generated will have a short path to the absorption interface and the first carriers will have a long path to the first semiconducting region which enables a gain to be greater for the deep ultraviolet photons than for photons not in the deep ultraviolet energy range.

2. The photodiode of claim 1 wherein the second semiconducting region is formed of SiC and wherein the first carriers are holes and the second carriers are electrons, and wherein the second semiconducting region has the doping concentration of n-type dopant impurities that increases from the second interface to the absorption interface upon which the photons impinge by a gradual increase or a variable rate increase wherein in the second semiconducting region only photon absorption and carrier generation occurs and not multiplication of carriers.

3. The photodiode of claim 1 further comprising one of a semi-transparent metal conductor region or a transparent semiconducting region at the deep ultraviolet energy range adjacent to the second semiconducting region suitable for forming an n-metal contact that uniformly spreads an electric field laterally within the photodiode; and wherein the second semiconducting region is formed of SiC and has the doping concentration of n-type dopant impurities that varies with thickness.

4. The photodiode of claim 1 wherein the first semiconducting region comprises p-type silicon carbide with an aluminum doping in a range from 1×10 18 cm −3 -1×10 19 cm −3 and wherein the intermediate region comprises n-type silicon carbide with a nitrogen atom doping in a range from 1×10 15 cm −3 to 1×10 16 cm −3 and a thickness in a range from 250-1000 nm and wherein the second semiconducting region comprises a first portion comprising n-type silicon carbide with a nitrogen doping increasing from 1×10 16 cm −3 to 1×10 18 Cm −3 over a thickness in a range from 50 to 100 nm and a second portion comprising n-type silicon carbide with a nitrogen doping in the range of 1-5×10 18 cm −3 over a thickness in a range of 10 to 40 nm and wherein upon the reverse biasing, the undepleted portion having the thickness less than the absorption depth forms in the second portion such that the recombination of carriers at the absorption interface is mitigated.

5. The photodiode of claim 1 wherein the second semiconducting region comprises n-type silicon carbide having a first portion having a thickness in a range from 50 to 100 nm and a second portion adjacent to the absorption interface having a thickness in a range of 10 to 40 nm; and wherein upon the reverse biasing, the undepleted portion having the thickness less than the absorption depth forms in the second portion such that the recombination of carriers at the absorption interface is mitigated.

6. The photodiode of claim 1 further comprising a transparent semiconducting region that is transparent at the deep ultraviolet energy range adjacent to the absorption interface of the second semiconducting region and suitable for mounting the second contact and wherein the transparent semiconducting region comprises AlGaN having a ratio of aluminum to gallium of greater than 80%, and having a free electron concentration from 1×10 17 cm −3 to 1×10 19 cm −3 and having a thickness in a range of 50-470 nm.

7. The photodiode of claim 1 wherein the thickness of the second semiconducting region is between 20-120 nm and preferred n-type doping concentration range is 9×10 17 to 5×10 18 cm −3 .

8. The photodiode of claim 1 wherein the first semiconducting region comprises p-type silicon carbide with an aluminum doping in a range from 1×10 18 cm −3 -1×10 19 cm −3 and wherein the intermediate region comprises n-type silicon carbide with a nitrogen atom doping in a range from 1×10 15 cm −3 to 1×10 16 cm −3 and a thickness in a range from 250-1000 nm and wherein the second semiconducting region comprises a first portion comprising n-type silicon carbide with a nitrogen doping increasing from 1×10 16 cm −3 to 1×10 18 cm −3 over a thickness in a range from 50 to 100 nm and a second portion comprising n-type silicon carbide with a nitrogen doping up to 5×10 18 cm −3 over a thickness in a range from 10 to 40 nm and wherein upon the reverse biasing the undepleted portion having the thickness less than the absorption depth forms in the second portion that enhances the gain for the deep ultraviolet photons relative to that for the photons not in the deep ultraviolet energy range.

9. The photodiode of claim 1 wherein the first semiconducting region comprises p-type silicon carbide with an aluminum doping in a range from 1×10 18 cm −3 -1×10 19 cm −3 and wherein the second semiconducting region comprises a first portion comprising n-type silicon carbide with a nitrogen doping increasing from 1×10 16 cm −3 to 1×10 18 cm

Assignees

• U S Army Res Laboratory Attn Rdrl Loc I
• Us Army

Inventors

• Sampath Anand Venktesh
• Wraback Michael
• Shen Paul

Classifications

• H01L31/1075 Primary

  Electricity · mapped topic

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/03046

  Electricity · mapped topic

• H01L31/03044

  Electricity · mapped topic

• H01L31/0336

  Electricity · mapped topic