Semiconductor transistor device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-9893066-B2
Application number	US-201715432165-A
Country	US
Kind code	B2
Filing date	Feb 14, 2017
Priority date	Oct 5, 2015
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.

First claim

What is claimed is:

1. A method for fabricating a semiconductor transistor device, comprising:
forming an oxide semiconductor layer having an active surface;
forming a source electrode, a drain electrode and a gate electrode separated from each other and directly in contact with the active surface, wherein the gate electrode is disposed between the drain electrode; and
forming a control capacitor to electrically connect to the gate electrode through a connection.

2. The method according to claim 1 , wherein the gate electrode, the source electrode, and the drain electrode are formed on a substrate; and the oxide semiconductor layer is formed on the gate electrode, the source electrode, and the drain electrode, so as to make the active surface facing the substrate.

3. The method according to claim 1 , wherein the oxide semiconductor layer is formed on a substrate, and the source electrode, and the drain electrode are formed on the active surface departs from the substrate.

4. The method according to claim 1 , further comprising steps of forming a conductive layer on one side of the oxide semiconductor layer opposite to the active surface.

5. The method according to claim 1 , further comprising steps of forming a directive current (DC) circuit or a radio frequency (RF) circuit electrically connected to the control capacitor.

Assignees

• United Microelectronics Corp

Inventors

• Zhou Zhi Biao
• Wu Shao Hui
• Ku Chi Fa
• Lin chen bin
• Xing Su
• Hsieh Tien Yu

Classifications

• H01L27/1052 Primary

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H01L27/124

  Electricity · mapped topic

• H01L27/1255

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic