Gap-fill polymer for filling fine pattern gaps and method for fabricating semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-9892964-B1
Application number	US-201715470387-A
Country	US
Kind code	B1
Filing date	Mar 27, 2017
Priority date	Jul 29, 2016
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

First claim

What is claimed is:

1. A gap-fill polymer for filling fine photoresist pattern gaps of a semiconductor device, the gap-fill polymer comprising a compound formed by condensation polymerization of a first oligomer represented by the following formula 1 and a second oligomer represented by the following formula 2:

wherein R is hydrogen or a substituted or unsubstituted C 1 -C 18 alkyl group; R 1 to R 4 are each one independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted C 1 -C 18 alkyl group, a substituted or unsubstituted C 2 -C 10 alkenyl group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 6 -C 18 aryl group, a substituted or unsubstituted C 6 -C 18 aralkyl group, and a substituted or unsubstituted C 6 -C 18 alkaryl group; and each of m and n represents a number of repeating units in a main chain of the first oligomer, and a molar ratio of m:n is 1:0.01 to 30;

Wherein R 5 is selected from the group consisting of a hydrogen atom, a hydroxyl group, a substituted or unsubstituted C 1 -C 18 alkyl group; R 6 to R 11 are each one independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted C 1 -C 18 alkyl group, a substituted or unsubstituted C 1 -C 18 alkenyl group, a substituted or unsubstituted C 1 -C 18 alkoxy group, a substituted or unsubstituted C 6 -C 18 aryl group, a substituted or unsubstituted C 3 -C 18 alkyl acrylate group, a substituted or unsubstituted C 4 -C 18 alkyl methacrylate group, a substituted or unsubstituted C 1 -C 18 aminoalkyl group, and a substituted or unsubstituted C 1 -C 18 alkylvinyl group; and each of o, p and q represents a number of repeating units in a main chain of the second oligomer, and a molar ratio of o:p:q is 1:0.01 to 30:0.01 to 30.

2. The gap-fill polymer of claim 1 , wherein the first oligomer represented by formula 1 comprises at least one compound selected from the group consisting of compounds represented by the following formulas 1a to 1c:

wherein the molar ratio of m:n is 1:0.01 to 30.

3. The gap-fill polymer of claim 1 , wherein the second oligomer represented by formula 2 comprises at least one compound selected from the group consisting of compounds represented by the following formulas 2a to 2c:

wherein the molar ratio of o:p:q is 1:0.01 to 30:0.01 to 30.

4. The gap-fill polymer of claim 1 , comprising a compound represented by the following formula 3:

wherein
R is hydrogen or a substituted or unsubstituted C 1 -C 18 alkyl group;
R 1 to R 4 are each one independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted C 1 -C 18 alkyl group, a substituted or unsubstituted C 2 -C 10 alkenyl group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 6 -C 18 aryl group, a substituted or unsubstituted C 6 -C 18 aralkyl group, and a substituted or unsubstituted C 6 -C 18 alkaryl group; R 5 is hydrogen, a hydroxyl group, or a substituted or unsubstituted C 1 -C 18 alkyl group;
R 6 to R 11 are each one independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted C 1 -C 18 alkyl group, a substituted or unsubstituted C 1 -C 18 alkoxy group, a substituted or unsubstituted C 6 -C 18 aryl group, a substituted or unsubstituted C 3 -C 18 alkyl acrylate group, a substituted or unsubstituted C 4 -C 18 alkyl methacrylate group, a substituted or unsubstituted C 1 -C 18 aminoalkyl group, and a substituted or unsubstituted C 1 -C 18 alkylvinyl group; and
each of m, n, o, p, q, r and s represents the number of repeating units in the main chain,
the molar ratio of m:n is 1:0.01 to 30,
the molar ratio of o:p:q is 1:0.01 to 30:0.01 to 30, and
the molar ratio of r:s is 10:90 to 90:10.

5. The gap-fill polymer of claim 4 , wherein the polymer represented by formula 3 comprises at least one compound selected from the group consisting of the following formulas 3a to 3i:

wherein
the molar ratio of m:n is 1:0.01 to 30,
the molar ratio of o:p:q is 1:0.01 to 30:0.01 to 30, and
the molar ratio of r:s is 10:90 to 90:10.

6. The gap-fill polymer of claim 1 , having a weight-average molecular weight (Mw) of 1,000-20,000.

7. The gap-fill polymer of claim 6 , having a weight-average molecular weight (Mw) of 3,000-18,000.

8. A method for preparing gap-fill polymer for fine photoresist patterns of a semiconductor device according to claim 1 , the method comprising:
dissolving the second oligomer represented by the following formula 2 in a polymerization solvent;
adding the first oligomer represented by the following formula 1 to the polymerization solvent; and
polymerizing the first oligomer of formula 1 with the second oligomer of formula 2 in the presence of an acid or base catalyst while hydrolyzing the first and second oligomers:

wherein
R is hydrogen or a substituted or unsubstituted C 1 -C 18 alkyl group;
R 1 to R 4 are each one independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted C 1 -C 18 alkyl group, a substituted or unsubstituted C 2 -C 10 alkenyl group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 6 -C 18 aryl group, a substituted or unsubstituted C 6 -C 18 aralkyl group, and a substituted or unsubstituted C 6 -C 18 alkaryl group; and
each of m and n represents a number of repeating units in a main chain of the first oligomer, and a molar ratio of m:n is 1:0.01 to 30;

wherein
R

Assignees

• Sk Hynix Inc
• Lee Geun Su

Inventors

• Moon Ji Won
• Jang Jin Wook
• YI Sang Youl
• Lee Sung Jae
• Lee Geun Su
• Lee Young Sun
• Kim Min Su

Classifications

• H10P50/28

  of insulating materials · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10D64/0115

  to silicon carbide · CPC title