Multi-zone resistive heater

US9892941B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9892941-B2
Application numberUS-48516009-A
CountryUS
Kind codeB2
Filing dateJun 16, 2009
Priority dateDec 1, 2005
Publication dateFeb 13, 2018
Grant dateFeb 13, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

First claim

Opening claim text (preview).

What is claimed: 1. An apparatus comprising: a stage comprising a body and a surface having an area to support a substrate, the body comprising a central region and an outer region; a shaft coupled to the stage; a first heating element consisting essentially of a planar, continuous section of material disposed within a recess within the central region of the body of the stage; and at least second and third heating elements consisting essentially of planar, continuous sections of material disposed within recesses within the outer region of the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other, wherein the first heating element is disposed within a first plane of the body of the stage adjacent to one of a top surface or bottom surface of the body of the stage, and the second and third heating elements are disposed within a second plane of the body of the stage adjacent to the other of the top surface or bottom surface of the body of the stage and dielectric material is disposed across the top surface to provide a susceptor, the susceptor including lip edges to hold the substrate during processing. 2. The apparatus of claim 1 further comprising only one temperature measuring device for controlling the respective temperatures of the heating elements, the temperature measuring device thermally coupled to the central region of the body. 3. The apparatus of claim 1 , further comprising at least fourth and fifth heating elements comprising planar, continuous sections of material disposed within recesses within the outer region of the body of the stage, the second, third, fourth and fifth heating elements substantially defining circumferentially adjacent quadrants that respectively partially surround the first heating element. 4. The apparatus of claim 3 , wherein the first heating element is disposed within the first plane of the body of the stage adjacent to one of a top or a bottom surface of the body of the stage, and the second, third, fourth and fifth heating elements are disposed within the second plane of the body of the stage adjacent to the other of the top or bottom surface of the body of the stage. 5. The apparatus of claim 1 , wherein the stage is comprised of a material that can withstand temperatures in excess of at least about 750° C. 6. The apparatus of claim 5 , wherein the stage comprises aluminum nitride. 7. The apparatus of claim 1 , wherein at least one of the heating elements comprises pyrolytic graphite. 8. The apparatus of claim 1 , wherein at least one of the heating elements has a thermal expansion property similar to that of the body. 9. The apparatus of claim 1 , wherein at least one of the heating elements has a thermal expansion property similar to that of the body. 10. A reactor incorporating the apparatus of claim 1 , wherein the reactor includes a chamber for formation of films on the substrate and the apparatus is located in the chamber. 11. A reactor incorporating the apparatus of claim 4 , wherein the reactor includes a chamber for formation of films on the substrate and the apparatus is located in the chamber. 12. A heating system for chemical vapor deposition comprising the apparatus of claim 1 ; a temperature sensor for measuring a temperature of the central region of the stage; at least first, second and third power sources for respectively providing power to the first, second and third heating elements; and a control system for controlling the first, second and third power sources. 13. A heating system for chemical vapor deposition comprising the apparatus of claim 4 ; a temperature sensor for measuring a temperature of the central region of the stage; at least first, second, third, fourth and fifth power sources for respectively providing power to the first, second, third, fourth and fifth heating elements; and a control system for controlling the first, second, third, fourth and fifth power sources. 14. The heating system of claim 12 , wherein the temperature sensor is the only temperature sensor used to measure a temperature of the heating element and the control system controls the temperature according to an output from the temperature sensor and an algorithm of a power ratio of power to the second and first heating elements and a power ratio of power to the third and the first heating elements. 15. The heating system of claim 13 , wherein the temperature sensor is the only temperature sensor used to measure the temperature of the heating element and the control system controls the temperature according to an output from the temperature sensor and an algorithm of a power ratio of power to the second and first heating elements, a power ratio of power to the third and the first heating elements, a power ratio of power to the fourth and the first heating elements, and a power ratio of power to the fifth and the first heating elements. 16. A method for resistive heating of substrates comprising: providing the apparatus of claim 1 ; providing each outer region of the body of the stage a respective power ratio with respect to the central region; measuring a temperature of the central region; providing heating power to the central region according to the measured temperature; and providing heating power delivered to each outer region according to the heating power delivered to the central region and the respective power ratio of the outer region. 17. The method of claim 16 , further comprising performing a calibration procedure to obtain the power ratios. 18. A method for resistive heating of substrates comprising: providing the apparatus of claim 4 ; providing each outer region of the body of the stage a respective power ratio with respect to the central region; measuring a temperature of the central region; providing heating power to the central region according to the measured temperature; and providing heating power delivered to each outer region according to the heating power delivered to the central region and the respective power ratio of the outer region. 19. The method of claim 18 , further comprising performing a calibration procedure to obtain the power ratios. 20. A substrate heating apparatus comprising: a stage comprising a body and a top surface having an area to support a substrate; a shaft coupled to the stage; a first heating element having thermal expansion properties that are similar to those of the body, wherein the first heating element is disposed within a recess adjacent to the top surface of the body of the stage, and located in a central region of the body of the stage; two or more outer heating elements having thermal expansion properties that are similar to those of the body disposed within recesses adjacent to a bottom surface of the body of the stage, and located in an outer region of the body of the stage, so that the two or more outer heating elements are below and partially surrounding the first heating element, and wherein the two or more outer heating elements are circumferentially adjacent to each other; a temperature sensor for measuring the temperature of the central region of the stage; three or more power sources for respectively providing power to the first heating element and the two or more outer heating elements; and a control system for controlling at least a first, second and third power sources, wherein the control system controls the temperature accor

Assignees

Inventors

Classifications

  • Temperature monitoring · CPC title

  • mainly by conduction · CPC title

  • Heating arrangements specially adapted for cooking plates or analogous hot-plates · CPC title

  • Electricity · mapped topic

  • Electricity · mapped topic

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Frequently asked questions

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What does patent US9892941B2 cover?
Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and …
Who is the assignee on this patent?
Cui Anqing, Tran Binh, Tam Alexander, and 5 more
What technology area does this patent fall under?
Primary CPC classification H10P72/0432. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).