Memory system
US-2024127893-A1 · Apr 18, 2024 · US
US9892798B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9892798-B2 |
| Application number | US-201514616424-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 6, 2015 |
| Priority date | Sep 11, 2012 |
| Publication date | Feb 13, 2018 |
| Grant date | Feb 13, 2018 |
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A data storage device receives a write data command and data. The data is stored in a buffer of the data storage device. The data storage device issues a command complete status indication. After the command complete status indication is issued, the data are stored in a primary memory of the data storage device. The primary memory comprises a first type of non-volatile memory and the buffer comprises a second type of non-volatile memory that is different from the first type of non-volatile memory.
Opening claim text (preview).
What is claimed is: 1. A method, comprising: receiving, in a data storage device, a write data command to store data in a primary memory of the data storage device; storing the data in a buffer of the storage device; after storing the data in the buffer, issuing a command complete status indication indicating that the write data command has been completed; and after issuing the command complete status indication, storing the data in the primary memory of the storage device, wherein the primary memory comprises a first type of non-volatile memory, the buffer comprises a second type of non-volatile memory that is different from the first type of non-volatile memory. 2. The method of claim 1 , wherein the second type of non-volatile memory has faster access time than the first type of non-volatile memory. 3. The method of claim 1 , wherein: storing the data in the primary memory comprises storing the data in flash memory; and storing the data in the buffer comprises storing the data in one or more of STRAM, PCRAM, RRAM, and NVSRAM. 4. The method of claim 1 , further comprising: storing mapping metadata in the buffer, the mapping metadata including mapping information between the logical block addresses of the data and a physical location of the data in the primary memory; and after issuing the command complete status indication, storing the mapping metadata in the primary memory. 5. The method of claim 1 , further comprising: accumulating data from multiple write data commands in the buffer until a threshold amount of data has been accumulated in the buffer; and after the threshold amount of data has been accumulated in the buffer, storing accumulated data in the primary memory. 6. The method of claim 5 , wherein: the primary memory comprises flash memory; and the threshold amount of accumulated data is one logical page of data. 7. The method of claim 5 wherein: the primary memory comprises flash memory; and the threshold amount of accumulated data is one physical page of data. 8. The method of claim 5 wherein the primary memory comprises multi-level flash memory and the threshold amount of accumulated data is sufficient to allow at least one page of accumulated data to be stored in the flash memory; and further comprising: reading one or more pages from each physical page in the at least one block of the primary memory where the at least one page is to be stored; storing the other pages in the buffer; and after the at least one page has been accumulated, storing the page and the other pages in the physical page of the primary memory. 9. The method of claim 8 , wherein reading the other pages occurs before accumulating the page. 10. The method of claim 8 , wherein reading the other pages occurs during accumulating the page. 11. The method of claim 1 , further comprising: counting numbers of times regions of logical blocks within the data storage device have been written; accumulating data from multiple write data commands in the buffer; and determining if regions of logical blocks are infrequently-written or frequently-written based on the numbers; and storing data for the infrequently-written regions of logical blocks into primary memory before storing data for the frequently-written regions of logical blocks. 12. The method of claim 1 , further comprising updating metadata that provides status of the write operation. 13. The method of claim 12 , wherein updating the metadata comprises updating the metadata to indicate a write operation is in progress after the write data command is received. 14. The method of claim 12 , wherein updating the metadata comprises updating the metadata to indicate that the data have been received. 15. The method of claim 12 , wherein updating the metadata comprise updating the metadata to indicate that the write operation is complete after storing the data in the primary memory. 16. A device, comprising: an interface configured to receive a write data command and data; a primary memory comprising a first type of non-volatile memory, wherein the write data command is a write data command to store data in the primary memory; a buffer comprising a second type of non-volatile memory different from the first type of non-volatile memory; and a controller configured to: cause the data to be stored in the buffer; after the data are stored in the buffer, issue a command complete status indication indicating the write data command is complete; and after the command complete status indication is issued, cause the data to be stored in the primary memory. 17. The device of claim 16 , wherein the second memory type comprises one or more of non-volatile static random-access memory (NVSRAM), phase-change memory (PCM), resistive random-access memory (RRAM), spin-torque RAM (STRAM), and magnetic RAM (MRAM). 18. The device of claim 16 , wherein the device comprises a solid state drive and the first memory type comprises flash memory. 19. The device of claim 16 wherein the device comprises a hybrid drive. 20. The device of claim 16 wherein the controller is configured to pre-compensate for write disturb effects when the data are stored in the primary memory.
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