Temperature sensor

Patent metadata

Field	Value
Publication number	US-9891117-B2
Application number	US-201314431687-A
Country	US
Kind code	B2
Filing date	Sep 17, 2013
Priority date	Sep 28, 2012
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.

First claim

What is claimed is:

1. A temperature sensor comprising:
an insulating film;
a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN;
a pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the bottom of the thin film thermistor portion using a metal so as to face each other; and
a pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes,

wherein at least a part of each of the pattern electrodes is formed of a conductive resin,
wherein the insulating film is comprised of the divisions of a distal film portion on which the thin film thermistor portion and the interdigitated electrodes are formed and a proximal film portion on which the pattern electrodes are formed, and,
wherein the interdigitated electrodes and the pattern electrodes that is formed of a conductive resin are connected to each other by a conductive resin and the distal film portion and the proximal film portion are connected to each other by a conductive resin.

2. The temperature sensor according to claim 1 , wherein each of the pattern electrodes is repeatedly folded back in a meander shape.

3. The temperature sensor according to claim 1 , wherein the thin film thermistor portion consists of a metal nitride represented by the general formula: Ti x Al y N z (where 0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Assignees

• Mitsubishi Materials Corp

Inventors

• Inaba Hitoshi
• Nagatomo Noriaki

Classifications

• H01C7/041

  formed with two or more layers · CPC title

• H01C1/148

  the terminals embracing or surrounding the resistive element (H01C1/142 takes precedence) · CPC title

• H01C1/142

  the terminals or tapping points being coated on the resistive element · CPC title

• G01K7/223 Primary

  characterised by the shape of the resistive element · CPC title

• G01K7/22 Primary

  the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title