Solid-state imaging device, imaging device, and signal reading method

Patent metadata

Field	Value
Publication number	US-9888199-B2
Application number	US-201614997112-A
Country	US
Kind code	B2
Filing date	Jan 15, 2016
Priority date	May 25, 2011
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel.

First claim

What is claimed is:

1. A solid-state imaging device comprising:
a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other, wherein
the pixels comprise:
a plurality of photoelectric conversion elements disposed in the first substrate;
an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output an amplified signal;
a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and
an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel,
wherein the plurality of the photoelectric conversion elements is classified into any of one or more groups, and first to n-th (where n is an integer equal to or greater than 2) photoelectric conversion elements within the same group share one amplifier circuit,
wherein the plurality of photoelectric conversion elements are classified into one or more groups on the basis of positions at which the first to n-th photoelectric conversion elements on the first substrate are disposed,
wherein the pixels further comprising a reset circuit that resets the plurality of photoelectric conversion elements,
wherein the reset circuit resets all the photoelectric conversion elements collectively, and then the signal accumulation circuit sequentially accumulates the amplified signals corresponding to signals generated in the first to n-th photoelectric conversion elements within the same group, and
wherein periods in which the amplified signals corresponding to the signals generated in the first to n-th photoelectric conversion elements within the same group are sequentially accumulated by the signal accumulation circuit are different from each other for each of the first to n-th photoelectric conversion elements within the same group.

2. A solid-state imaging device comprising:
a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other, wherein
the pixels comprise:
a plurality of photoelectric conversion elements disposed in the first substrate;
an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output an amplified signal;
a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and
an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel,

wherein the plurality of the photoelectric conversion elements is classified into any of one or more groups, and first to n-th (where n is an integer equal to or greater than 2) photoelectric conversion elements within the same group share one amplifier circuit,
wherein the plurality of photoelectric conversion elements are classified into one or more groups on the basis of positions at which the first to n-th photoelectric conversion elements on the first substrate are disposed,
wherein the pixels further comprising a reset circuit that resets the plurality of photoelectric conversion elements,
wherein the reset circuit resets all the photoelectric conversion elements collectively, and then the signal accumulation circuit sequentially accumulates the amplified signals corresponding to signals generated in the first to n-th photoelectric conversion elements within the same group,
wherein the pixels further comprising a noise reduction circuit that reduces noise in the amplified signals which are output from the amplifier circuit,
wherein the noise reduction circuit includes:
a clamp section that clamps the amplified signals being output from the amplifier circuit; and
a sample-and-hold section that samples and holds signals based on the amplified signals clamped in the clamp section and accumulates a sampled and held signals in the signal accumulation circuit,

wherein periods in which the signals based on the amplified signals clamped in the clamp section are sampled and held by the sample-and-hold section and sequentially accumulated by the signal accumulation circuit are different from each other for each of the first to n-th photoelectric conversion elements within the same group.

3. A solid-state imaging device comprising;
a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other, wherein
the pixels comprise:
a plurality of photoelectric conversion elements disposed in the first substrate;
an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output an amplified signal;
a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and
an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel,

wherein the plurality of the photoelectric conversion elements is classified into any of one or more groups, and first to n-th (where n is an integer equal to or greater than 2) photoelectric conversion elements within the same group share one amplifier circuit,
wherein the plurality of photoelectric conversion elements are classified into one or more groups on the basis of positions at which the first to n-th photoelectric conversion elements on the first substrate are disposed,
wherein the pixels further comprising a reset circuit that resets the plurality of photoelectric conversion elements,
the reset circuit sequentially resets the first to n-th photoelectric conversion elements within the same group, and then the signal accumulation circuit sequentially accumulates the amplified signals corresponding to the signals generated in the first to n-th photoelectric conversion elements within the same group,
wherein periods in which the amplified signals corresponding to the signals generated in the first to n-th photoelectric conversion elements within the same group are sequentially accumulated by the signal accumulation circuit, are different from each other for each of the first to n-th photoelectric conversion elements within the same group.

4. A solid-state imaging device comprising:
a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other, wherein
the pixels comprise:
a plurality of photoelectric conversion elements disposed in the first substrate;
an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output an amplified signal;
a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and
an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel,

wherein the plurality of the photoelectric conversion elements is classified into any of one or more groups, and first to n-th (where n is an integer equal to or greater than 2) photoelectric conversion elements within the same group share one amplifier circuit,
wherein the plurality of photoelectric conversion elements are classified into one or more groups on the basis of positions at which the first to n-th photoelectric conversion elements on the first substrate are disposed,
wherein the pixels further comprising a reset circuit that resets the plurality of photoelectric conversion elements,
the reset circuit sequentially resets the first to n-th photoelectric conversion elements within the same group, and then the signal accumulation circuit sequentially accumulates

Assignees

• Olympus Corp

Inventors

• Gomi Yuichi
• Kato Hideki
• Sakaguchi naofumi
• Fukuoka Naoto

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/20 Primary

  Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title

• H04N25/44 Primary

  by partially reading an SSIS array · CPC title