Power amplifier

Patent metadata

Field	Value
Publication number	US-9887675-B2
Application number	US-201615283616-A
Country	US
Kind code	B2
Filing date	Oct 3, 2016
Priority date	Mar 18, 2016
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

A power amplifier includes: a transistor having a gate electrode, a source electrode and a drain electrode; a passive component part connected to the gate electrode through a gate wiring; and a harmonic circuit connected between the source electrode and the gate wiring and disposed in a region between the gate electrode and the passive component part and between the source electrode and the gate wiring.

First claim

The invention claimed is:

1. A power amplifier comprising:
a transistor having a gate electrode, a source electrode and a drain electrode;
a passive component part connected to the gate electrode through a gate wiring; and
a harmonic circuit connected between the source electrode and the gate wiring and disposed in a region between the gate electrode and the passive component part and between the source electrode and the gate wiring, wherein the harmonic circuit causes an impedance for a harmonic as seen from the gate electrode is set to a value for a short.

2. The power amplifier according to claim 1 , wherein the source electrode includes first and second source electrodes respectively disposed on opposite sides of the gate wiring, and
the harmonic circuit includes a first harmonic circuit connected and disposed between the first source electrode and the gate wiring and a second harmonic circuit connected and disposed between the second source electrode and the gate wiring.

3. The power amplifier according to claim 2 , wherein the first and second harmonic circuits are bilaterally symmetrically disposed, with the gate wiring interposed therebetween.

4. The power amplifier according to claim 1 , further comprising a wiring element connected to the source electrode or the gate wiring and having the same potential,
wherein the harmonic circuit is disposed on the wiring element, and the wiring element is larger in width than the harmonic circuit.

5. The power amplifier according to claim 1 , wherein the harmonic circuit has a plurality of harmonic circuits differing in size, and the harmonic circuit smaller in size is disposed closer to the gate electrode of the transistor than the harmonic circuit larger in size.

6. The power amplifier according to claim 1 , wherein the harmonic circuit has a wiring element.

7. The power amplifier according to claim 1 , wherein the harmonic circuit has a resistor element.

8. The power amplifier according to claim 1 , wherein other power amplifiers are respectively connected in parallel with first and second sides of the passive component part opposite from each other, and
a resistor element is inserted in the passive component part between the first and second sides.

9. The power amplifier according to claim 1 , wherein other power amplifier is connected in parallel with the passive component part, and a resistor element is connected between the passive component part and the other power amplifier.

10. The power amplifier according to claim 8 , wherein the resistor element has a resistance value increasing with increase in temperature.

11. The power amplifier according to claim 8 , wherein the resistor element is a parasitic resistor of a thin film metal wiring line or a contact resistor.

Assignees

• Mitsubishi Electric Corp

Inventors

• Haruna Takao

Classifications

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F1/565 Primary

  using inductive elements · CPC title

• H03F3/195

  in integrated circuits · CPC title

• H03F3/19

  with semiconductor devices only · CPC title

• H03F3/245

  with semiconductor devices only · CPC title