Light-emitting apparatus and light-emitting module including the same

Patent metadata

Field	Value
Publication number	US-9887330-B2
Application number	US-201615195329-A
Country	US
Kind code	B2
Filing date	Jun 28, 2016
Priority date	Jul 10, 2015
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

A light-emitting apparatus includes a reflective layer including a cavity that penetrates the reflective layer from a top surface to a bottom surface of the reflective layer; a light-emitting device disposed in the cavity, the light-emitting device including a light-emitting stack and an electrode connected to the light-emitting stack at a bottom surface of the light-emitting stack; and a wavelength conversion layer that fills the cavity and covers a top surface and a side surface of the light-emitting device, wherein the wavelength conversion layer exposes at least a portion of the electrode to an outside.

First claim

What is claimed is:

1. A light-emitting apparatus comprising:
a reflective layer comprising a cavity that penetrates the reflective layer from a top surface to a bottom surface of the reflective layer;
a light-emitting device disposed in the cavity, the light-emitting device comprising a light-emitting stack and an electrode connected to the light-emitting stack at a bottom surface of the light-emitting stack; and
a wavelength conversion layer that covers at least one of a top surface and a side surface of the light-emitting device,
wherein the light-emitting stack comprises a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer,
wherein the electrode comprises a first electrode and a second electrode,
wherein the first electrode penetrates the second conductive-type semiconductor layer and the active layer to be provided as a conductive via connected to the first conductive-type semiconductor layer, and the second electrode is connected to the second conductive-type semiconductor layer, and
Wherein the reflective layer further comprises a bottom portion connected to an end portion of a sloped portion of the reflective layer, the bottom portion extending in a direction parallel to the bottom surface of the reflective layer.

2. The light-emitting apparatus of claim 1 , wherein the sloped portion of the reflective layer is provided at an inner side surface of the reflective layer, which contacts the wavelength conversion layer.

3. The light-emitting apparatus of claim 1 , wherein the reflective layer comprises a white silicone sheet.

4. The light-emitting apparatus of claim 1 , further comprising a reflective film on an inner side surface of the reflective layer.

5. The light-emitting apparatus of claim 1 , wherein the wavelength conversion layer comprises an adhesive layer and a phosphor film disposed on the adhesive layer, wherein a bottom surface of the adhesive layer is at a level identical to that of the bottom surface of the reflective layer, and a top surface of the adhesive layer is at a level identical to or higher than that of the top surface of the light-emitting device.

6. The light-emitting apparatus of claim 1 , further comprising a lens layer on the reflective layer.

7. The light-emitting apparatus of claim 1 , wherein a bottom surface of the wavelength conversion layer and the bottom surface of the reflective layer provide a bottom surface of the light-emitting apparatus.

8. The light-emitting apparatus of claim 1 , wherein light generated by the light-emitting stack is controlled to adjust a color temperature in a range of about 2,700 K to about 5,000 K.

9. A light source module comprising:
a circuit board comprising a connection pad on a surface of the circuit board; and
a light-emitting apparatus mounted on the circuit board,
wherein the light-emitting apparatus comprises:
a reflective layer comprising a cavity that penetrates the reflective layer from a top surface to a bottom surface of the reflective layer;
a light-emitting device disposed in the cavity, the light-emitting device comprising a light-emitting stack and an electrode connected to the light-emitting stack at a bottom surface of the light-emitting stack; and
a wavelength conversion layer that covers at least one of a top surface and a side surface of the light-emitting device,
Wherein the light-emitting stack comprises a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer,
the electrode comprises a first electrode connected to the first conductive-type semiconductor layer and a second electrode connected to the second conductive-type semiconductor layer,
wherein the first electrode penetrates the second conductive-type semiconductor layer and the active layer to be provided as a conductive via connected to the first conductive-type semiconductor layer, and the second electrode is connected to the second conductive-type semiconductor layer, and
Wherein the reflective layer further comprises a bottom portion connected to an end portion of a sloped portion of the reflective layer, the bottom portion extending in a direction parallel to the bottom surface of the reflective layer.

10. The light source module of claim 9 , wherein a bottom surface of the wavelength conversion layer and the bottom surface of the reflective layer provide a bottom surface of the light-emitting apparatus.

11. The light source module of claim 9 , wherein the reflective layer comprises a white silicone sheet.

12. The light source module of claim 9 , wherein an area of a top surface of the cavity is greater than an area of a bottom surface of the cavity.

13. A light-emitting apparatus comprising:
a light-emitting stack comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;
a wavelength conversion layer at least a portion of which is disposed above the light-emitting stack and configured to convert a wavelength of at least some of light, emitted from the active layer and having a first wavelength, into a second wavelength;
a reflective layer that surrounds at least side surfaces of the wavelength conversion layer; and
an electrode connected to the light-emitting stack at a bottom surface of the light-emitting stack, wherein the electrode comprise a first electrode and a second electrode,
wherein the first electrode penetrates the second conductive-type semiconductor layer and the active layer to be provided as a conductive via connected to the first conductive-type semiconductor layer, and the second electrode is connected to the second conductive-type semiconductor layer, and
Wherein the reflective layer further comprises a bottom portion connected to an end portion of a sloped portion of the reflective layer, the bottom portion extending in a direction parallel to a bottom surface of the reflective layer.

14. The light-emitting apparatus of claim 13 , wherein the bottom surface of the light-emitting stack is positioned at a level higher than a level of the bottom surface of the reflective layer.

15. The light-emitting apparatus of claim 13 , wherein the electrode is exposed to an outside.

16. The light-emitting apparatus of claim 13 , wherein the reflective layer comprises an inclined portion that is inclined relative to a top surface of the reflective layer, the inclined portion contacting the wavelength conversion layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Hun Yong
• Lee Sang Hyun
• Yong Gam Han
• Kim Eui Seok

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/07251

  characterised by changes in properties of the bump connectors during connecting · CPC title

• H10W72/20

  Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title

• H01L2924/181

  Electricity · mapped topic

• H01L2924/00012

  Electricity · mapped topic