Method for continuously forming noble metal film and method for continuously manufacturing electronic component

Patent metadata

Field	Value
Publication number	US-9885107-B2
Application number	US-201214367295-A
Country	US
Kind code	B2
Filing date	Dec 10, 2012
Priority date	Dec 27, 2011
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.

First claim

The invention claimed is:

1. A method for continuously forming a film made of a noble metal comprising the steps of:
carrying a substrate into a chamber;
forming only the film made of the noble metal on the substrate by plasma sputtering in the chamber; and then
during a period from when the substrate is carried out from the chamber after film formation to when another substrate upon which the film made of the noble metal is to be formed subsequently is carried into the chamber, forming on an inner wall surface of the chamber a secondary electron emission covering film made of a material having a secondary electron emission coefficient higher than that of the noble metal.

2. The method according to claim 1 , wherein the secondary electron emission covering film is formed by sputtering.

3. The method according to claim 1 , wherein the secondary electron emission covering film is formed by vapor deposition.

4. The method according to claim 1 , wherein reactive gas is introduced into the chamber, and the noble metal adhered onto the inner wall surface of the chamber is chemically reacted with the reactive gas using plasma, whereby the secondary electron emission covering film is formed.

5. The method according to claim 4 , wherein the reactive gas is oxygen gas or nitrogen gas.

6. The method according to claim 1 , wherein the secondary electron emission covering film is formed at a predetermined interval based on a deposition amount of a film made of noble metal deposited on the inner wall surface of the chamber.

7. A method for continuously forming an electronic component comprising a film made of a noble metal as a member, wherein the film made of a noble metal is formed by the method for continuously forming a film made of a noble metal according to claim 1 .

Assignees

• Canon Anelva Corp

Inventors

• Wakayanagi Shunichi
• Watanabe Eisaku

Classifications

• H01J37/3426

  Material · CPC title

• H01J37/32477

  characterised by the means for protecting vessels or internal parts, e.g. coatings · CPC title

• C23C14/14 Primary

  Metallic material, boron or silicon · CPC title

• H01J37/34

  operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) · CPC title

• C23C14/351

  using a magnetic field in close vicinity to the substrate · CPC title