Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

Patent metadata

Field	Value
Publication number	US-9881801-B2
Application number	US-201113582972-A
Country	US
Kind code	B2
Filing date	Nov 21, 2011
Priority date	Nov 22, 2010
Publication date	Jan 30, 2018
Grant date	Jan 30, 2018

Abstract

A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include a tetravalent metal element hydroxide, and produce a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G.

First claim

The invention claimed is:

1. A slurry comprising abrasive grains and water,
the abrasive grains including a hydroxide of tetravalent cerium, and the abrasive grains including a property of producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G,
wherein the abrasive grains further include a property of producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

2. The slurry according to claim 1 , wherein the abrasive grains further include a property of producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

3. The slurry according to claim 1 , wherein the abrasive grains further include a property of producing absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

4. The slurry according to claim 1 , wherein the abrasive grains further include a property of producing light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

5. The slurry according to claim 1 , wherein the hydroxide of tetravalent cerium is obtained by mixing a tetravalent cerium salt and an alkali solution.

6. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid, wherein the first liquid is the slurry according to claim 1 , and the second liquid comprises an additive and water.

7. The polishing liquid set according to claim 6 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

8. The polishing liquid set according to claim 6 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

9. A polishing liquid comprising abrasive grains, an additive and water,
the abrasive grains including a hydroxide of tetravalent cerium, and the abrasive grains including a property of producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G, and
wherein the abrasive grains further include a property of producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

10. The polishing liquid according to claim 9 , wherein the abrasive grains further include a property of producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

11. The polishing liquid according to claim 9 , wherein the abrasive grains further include a property of producing absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

12. The polishing liquid according to claim 9 , wherein the abrasive grains further include a property of producing light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

13. The polishing liquid according to claim 9 , wherein the hydroxide of tetravalent cerium is obtained by mixing a tetravalent cerium salt and an alkali solution.

14. The polishing liquid according to claim 9 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

15. The polishing liquid according to claim 9 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

16. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while supplying the slurry according to claim 1 between the abrasive pad and the film to be polished.

17. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,
a step of mixing the first liquid and second liquid of the polishing liquid set according to claim 6 to obtain the polishing liquid, and
a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.

18. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and second liquid of the polishing liquid set according to claim 6 between the abrasive pad and the film to be polished.

19. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to claim 9 between the abrasive pad and the film to be polished.

20. The polishing method according to claim 16 , wherein the film to be polished includes silicon oxide.

21. The polishing method according to claim 16 , wherein a surface of the film to be polished has irregularities.

22. The polishing method according to claim 17 , wherein the film to be polished includes silicon oxide.

23. The polishing method according to claim 18 , wherein the film to be polished includes silicon oxide.

24. The polishing method according to claim 19 , wherein the film to be polished includes silicon oxide.

25. The polishing method according to claim 17 , wherein a surface of the film to be polished has irregularities.

26. The polishing method according to claim 18 , wherein a surface of the film to be polished has irregularities.

27. The polishing method according to claim 19 , wherein a surface of the film to be polished has irregularities.

28. A slurry comprising abrasive grains and water,
the abrasive grains including a hydroxide of tetravalent cerium, and the abrasive grains including a property of producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10 5 G,
the abrasive grains further including a property of producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a co

Assignees

• Iwano Tomohiro
• Hitachi Chemical Co Ltd

Inventors

• Iwano Tomohiro

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/402 Primary

  of semiconductor materials · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• H01L21/30625 Primary

  Electricity · mapped topic

• C09K3/1463

  Aqueous liquid suspensions · CPC title