Sensing structure of alignment of a probe for testing integrated circuits

Patent metadata

Field	Value
Publication number	US-9880219-B2
Application number	US-201514754906-A
Country	US
Kind code	B2
Filing date	Jun 30, 2015
Priority date	Jun 10, 2010
Publication date	Jan 30, 2018
Grant date	Jan 30, 2018

Abstract

A sensing structure is presented for use in testing integrated circuits on a substrate. The sensing structure includes a probe region corresponding to a conductive region for connecting to the integrated circuit. A first sensing region at least partially surrounds the probe region. A plurality of sensing elements connects in series such that a first of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the probe region. And a second of the plurality of sensing elements has two terminals respectively connected to the probe region and a first reference potential.

First claim

The invention claimed is:

1. A sensing structure for use in testing an integrated circuit on a substrate, the sensing structure comprising:
a conductive probe region;
a first sensing region at least partially surrounding the conductive probe region; and
a plurality of sensing elements connected in series;
wherein a first sensing element of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the conductive probe region; wherein a second sensing element of the plurality of sensing elements has two terminals respectively connected to the conductive probe region and a first reference potential.

2. The sensing structure of claim 1 , wherein each sensing element comprises a diode or a transistor.

3. The sensing structure of claim 1 , further comprising additional sensing regions and for each additional sensing region a different value of an electrical parameter is measurable between the additional sensing region and the first reference potential for determining a drift direction of the probe.

4. The sensing structure of claim 1 , wherein the first sensing region is further connected to a second reference potential and one of the first and second reference potentials is a ground potential.

5. The sensing structure of claim 4 , further comprising an additional probe region; a further probe region; a second sensing region at least partially surrounding the additional probe region, and wherein the first sensing region at least partially surrounds the additional and further probe region.

6. The sensing structure of claim 1 , wherein the conductive probe region has a diamond shape in a top view and the first sensing region partially surrounds two sides of the diamond shape of the conductive probe region.

7. The sensing structure of claim 1 , further comprising a reference pad and a ground pad respectively connected to the first and the second sensing elements, wherein the reference pad is connected to a reference voltage probe for providing a second reference potential and the ground pad is connected to a ground potential for providing the first reference potential.

8. A sensing structure for use in testing an integrated circuit on a substrate, the sensing structure comprising:
a conductive probe region;
a first sensing region at least partially surrounding the conductive probe region; and
a plurality of sensing elements connected in series;
wherein a first sensing element of the plurality of sensing elements has two terminals respectively connecting the first sensing region to a first reference potential and a first terminal of a second sensing element of the plurality of sensing elements; and
wherein the second sensing element has a second terminal connected to the conductive probe region.

9. The sensing structure of claim 7 , further comprising a second conductive probe region and a second sensing region at least partially surrounding the second conductive probe region, and a third sensing element connecting the first sensing region to the second sensing region.

10. The sensing structure of claim 7 , further comprising a fourth sensing element connecting the second conductive probe region to the first reference potential.

11. The sensing structure of claim 9 , further comprising a third conductive probe region adjacent to the first sensing region and the second sensing region electrically connected to the first sensing region as a continuous conductive sensing region; and a fourth sensing element connecting a third sensing region partially surrounding the third conductive probe region to the first and the second sensing regions.

12. The sensing structure of claim 11 , wherein the first, the second, and the third sensing regions partially surround all the first, the second, and the third conductive probe regions.

13. A substrate for integrated circuits, comprising:
a conductive probe region;
a plurality of sensing regions partially surround the conductive probe region and connectable to a probe; and
a plurality of sensing elements connecting, in series, the plurality of sensing regions to the conductive probe region;
wherein each of the plurality of sensing elements has two terminals connecting two of the plurality of sensing regions, and a probe sensing element connecting the plurality of sensing elements to the conductive probe region.

14. The substrate of claim 13 , wherein the connection between the probe sensing element and the plurality of sensing elements is further connected to a ground reference potential.

15. The sensing structure of claim 13 , wherein the conductive probe region has a round shape and the plurality of sensing regions each has an arc shape partially surrounding the conductive probe region.

16. The sensing structure of claim 13 , wherein the probe sensing element and the plurality of sensing elements include a diode or a transistor.

17. A substrate for integrated circuits, comprising:
a conductive probe region;
a probe sensing element connecting a ground terminal to the conductive probe region;
a plurality of sensing regions partially surround the conductive probe region and connectable to a probe; and
a plurality of sensing elements connecting, in series, the plurality of sensing regions to each other, wherein each of the plurality of sensing elements has two terminals, each of the two terminals connecting to one of the plurality of sensing regions.

18. The substrate of claim 17 , wherein one of the plurality of sensing element is provided with a reference voltage potential.

19. The sensing structure of claim 17 , wherein the conductive probe region has a round shape and the plurality of sensing regions each has an arc shape partially surrounding the conductive probe region.

20. The sensing structure of claim 17 , wherein the probe sensing element and the plurality of sensing elements include a diode or a transistor.

Assignees

• St Microelectronics Srl

Inventors

• Pagani Alberto

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• G01R31/2891 Primary

  related to sensing or controlling of force, position, temperature (G01R31/2874 takes precedence; sensing of force G01L; sensing of position G01B, G01D; sensing of temperature G01K; controlling in general G05) · CPC title

• H01L2221/00

  Electricity · mapped topic

• C12Q2304/00

  Chemical means of detecting microorganisms · CPC title