Method of chemical mechanical polishing of alumina

Patent metadata

Field	Value
Publication number	US-9878420-B2
Application number	US-201615341130-A
Country	US
Kind code	B2
Filing date	Nov 2, 2016
Priority date	Aug 4, 2014
Publication date	Jan 30, 2018
Grant date	Jan 30, 2018

Abstract

A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface. The polydispersity is determined by a polydispersity formula for a distribution width (w) involving width w 1 and width w 2 at a second larger particle size. The polydispersity formula=(w 2 −w 1 )×100/dav which includes 63% of a total of the colloidal particles by volume and day is an average particle size of the colloidal particles.

First claim

The invention claimed is:

1. A method of chemical mechanical polishing (CMP), comprising:
providing a slurry including:
a plurality of colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water,
(i) said plurality of colloidal particles having a polydispersity >50% determined by a polydispersity formula for a distribution width (w) involving a first width (w 1 ) at a first particle size and a second width (w 2 ) at a second larger particle size, said polydispersity formula=(w 2 −w 1 )×100/dav which includes 63% of a total of said plurality of colloidal particles by volume and said day is an average particle size of said plurality of colloidal particles, and
(ii) mixed particle types comprising said plurality of colloidal particles with an average primary particle size >50 nm mixed with fumed oxide particles having an average primary particle size <25 nm, and

placing a substrate having an alumina surface into a CMP apparatus having a rotating polishing pad, and
performing CMP with said rotating polishing pad and said slurry to polish said alumina surface.

2. The method of claim 1 , wherein said polydispersity is >80%.

3. The method of claim 1 , wherein said particle feature includes said (i) and said (ii).

4. The method of claim 1 , wherein said alumina surface comprises sapphire, doped sapphire, or AlON.

5. The method of claim 1 , wherein said rotating polishing pad comprises a polymeric-based polishing pad.

6. The method of claim 1 , wherein a pH of said slurry is >7.

7. The method of claim 1 , wherein said particle feature further comprises an organic material which comprises a nitrogen-based organic compound.

8. The method of claim 1 , further comprising alkali metal ions in a concentration from 500 ppm to 5 weight %.

9. The method of claim 1 , further comprising a coating on said plurality of colloidal particles including at least one of Group I ions, Group II ions, or a transition metal oxide.

10. The method of claim 1 , wherein said plurality of colloidal particles have an average surface area per unit mass <100 m 2 /gm mixed and said fumed oxide particles having an average surface area per unit mass >150 m 2 /gm.

11. The method of claim 1 , wherein said alumina surface comprises a polycrystalline surface.

Assignees

• Sinmat Inc
• Univ Florida

Inventors

• Singh Rajiv K
• Balasundaram Kannan
• Arjunan Arul Chakkaravarthi
• Singh Deepika
• Bai Wei

Classifications

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C23F3/00

  Brightening metals by chemical means · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• B24B37/20 Primary

  Lapping pads for working plane surfaces · CPC title