LC filter layer stacking by layer transfer to make 3D multiplexer structures

US9876513B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9876513-B2
Application numberUS-201615088019-A
CountryUS
Kind codeB2
Filing dateMar 31, 2016
Priority dateMar 31, 2016
Publication dateJan 23, 2018
Grant dateJan 23, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A three dimensional (3D) multiplexer structure may include a first two dimensional (2D) inductor capacitor (LC) filter layer. The first 2D LC filter layer may include a first 2D spiral inductor and a first capacitor(s). The 3D multiplexer structure may also include a second 2D LC filter layer. The second 2D LC filter layer may include a second 2D spiral inductor and a second capacitor(s) stacked directly on and communicably coupled to the first 2D LC filter.

First claim

Opening claim text (preview).

What is claimed is: 1. A three dimensional (3D) stacked multiplexer structure, comprising: a high band filter comprising a first two dimensional (2D) inductor capacitor (LC) filter circuit including a first 2D spiral inductor and at least one first capacitor, the high band filter on a first side of the 3D stacked multiplexer structure; and a low band filter comprising a second 2D LC filter circuit including a second 2D spiral inductor and at least one second capacitor, the second 2D LC filter circuit stacked directly on and communicably coupled to the first 2D LC filter circuit, the low band filter on a second side opposite the first side of the 3D stacked multiplexer structure and opposite from the high band filter. 2. The 3D stacked multiplexer structure of claim 1 , in which the second 2D spiral inductor comprises a copper trace. 3. The 3D stacked multiplexer structure of claim 1 , further comprising a mid-band filter coupled to conductive bumps of the high band filter. 4. The 3D stacked multiplexer structure of claim 1 , in which the second side of the 3D stacked multiplexer structure, including the low band filter, is a backside of the 3D stacked multiplexer structure opposite from a system board. 5. The 3D stacked multiplexer structure of claim 1 , in which the first 2D LC filter circuit and the second 2D LC filter circuit are stacked to arrange the first 2D spiral inductor opposite from the second 2D spiral inductor. 6. The 3D stacked multiplexer structure of claim 1 , in which the first 2D LC filter circuit and the second 2D LC filter circuit are stacked back to back, back to face, face to back, or face to face. 7. The 3D stacked multiplexer structure of claim 1 , integrated into a radio frequency (RF) front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer. 8. A method of constructing a three dimensional (3D) stacked multiplexer structure, comprising: fabricating a first two dimensional (2D) inductor capacitor (LC) filter circuit, including a first 2D spiral inductor and at least one first capacitor, on a passive substrate panel; fabricating a second LC filter circuit, including a second 2D spiral inductor and at least one second capacitor, on the passive substrate panel; removing the passive substrate panel from the first 2D LC filter circuit and the second 2D LC filter circuit; and stacking the second 2D LC filter circuit directly on the first 2D LC filter circuit. 9. The method of claim 8 , in which the first 2D LC filter circuit is fabricated directly on a first surface of the passive substrate panel and the second 2D LC filter circuit is fabricated directly on a second surface of the passive substrate panel opposite the first surface using a dual-sided printing process. 10. The method of claim 8 , in which the first 2D LC filter circuit is fabricated side by side with the second 2D LC filter circuit directly on a surface of the passive substrate panel. 11. The method of claim 10 , in which stacking the second 2D LC filter circuit directly on the first 2D LC filter circuit comprises: peeling the passive substrate panel from the first 2D LC filter circuit fabricated side by side with the second 2D LC filter circuit; and folding a backside of the second 2D LC filter circuit onto the backside of the first 2D LC filter circuit according to a back to back integration of the first 2D LC filter circuit and the second 2D LC filter circuit. 12. The method of claim 8 , in which removing the substrate comprises using an etching process or a mechanical peeling process to remove the first 2D LC filter circuit and the second 2D LC filter circuit. 13. The method of claim 8 , in which the first 2D LC filter circuit is fabricated using a first process and the second 2D LC filter circuit is fabricated using a second process different from the first process. 14. The method of claim 8 , further comprising integrating the 3D stacked multiplexer structure into a radio frequency (RF) front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer. 15. A three dimensional (3D) stacked multiplexer structure, comprising: a high band filter comprising a first two dimensional (2D) inductor capacitor (LC) filter circuit including a 2D spiral inductor and at least one first means for storing charge, the high band filter on a first side of the 3D stacked multiplexer structure; and a low band filter comprising a second 2D LC filter circuit including a second 2D spiral inductor and at least one second means for storing charge, the second 2D LC filter circuit stacked directly on and communicably coupled to the first 2D LC filter circuit, the low band filter on a second side opposite the first side of the 3D stacked multiplexer structure and opposite from the high band filter. 16. The 3D stacked multiplexer structure of claim 15 , further comprising a mid-band filter coupled to conductive bumps of the high band filter. 17. The 3D stacked multiplexer structure of claim 15 , in which the second side of the 3D stacked multiplexer structure including the low band filter is a backside of the 3D stacked multiplexer structure that is opposite from a system board. 18. The 3D stacked multiplexer structure of claim 15 , in which the first 2D LC filter circuit and the second 2D LC filter circuit are stacked to arrange the first 2D spiral inductor opposite from the second 2D spiral inductor. 19. The 3D stacked multiplexer structure of claim 15 , in which the first 2D LC filter circuit and the second 2D LC filter circuit are stacked back to back, back to face, face to back, or face to face. 20. The 3D stacked multiplexer structure of claim 15 , integrated into a radio frequency (RF) front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer. 21. A radio frequency (RF) front end module, comprising: a three dimensional (3D) stacked multiplexer structure, including a high band filter comprising a first two dimensional (2D) inductor capacitor (LC) filter circuit including a first 2D spiral inductor and at least one first capacitor, the high band filter on a first side of the 3D stacked multiplexer structure, and a low band filter comprising a second 2D LC filter circuit including a second 2D spiral inductor and at least one second capacitor, the second 2D LC filter circuit stacked directly on and communicably coupled to the first 2D LC filter circuit, the low band filter on a second side opposite the first side of the 3D stacked multiplexer structure and opposite from the high band filter; and an antenna coupled to an output of the 3D stacked multiplexer structure. 22. The RF front end module of claim 21 , further comprising: a high band antenna switch coupled to the first 2D LC filter circuit through a high band input port of the 3D stacked multiplexer structure; and a low band antenna switch coupled to the second 2D LC filter circuit through a low band input

Assignees

Inventors

Classifications

  • of bump connectors, dummy bumps or thermal bumps · CPC title

  • comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence) · CPC title

  • Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators · CPC title

  • H04B1/0057Primary

    using diplexing or multiplexing filters for selecting the desired band · CPC title

  • H03H7/463Primary

    Duplexers · CPC title

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What does patent US9876513B2 cover?
A three dimensional (3D) multiplexer structure may include a first two dimensional (2D) inductor capacitor (LC) filter layer. The first 2D LC filter layer may include a first 2D spiral inductor and a first capacitor(s). The 3D multiplexer structure may also include a second 2D LC filter layer. The second 2D LC filter layer may include a second 2D spiral inductor and a second capacitor(s) stacke…
Who is the assignee on this patent?
Qualcomm Inc
What technology area does this patent fall under?
Primary CPC classification H04B1/0057. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 23 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).