Component comprising stacked functional structures and method for producing same

Patent metadata

Field	Value
Publication number	US-9876158-B2
Application number	US-201414766674-A
Country	US
Kind code	B2
Filing date	Feb 27, 2014
Priority date	Mar 6, 2013
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

A component suitable for miniaturization and comprising acoustically decoupled functional structures is specified. The component comprises a first functional structure, a first thin-film cover, which covers the first functional structure, and a second functional structure above the thin-film cover. The thin-film cover does not touch the first functional structure.

First claim

The invention claimed is:

1. A component comprising:
a first structure, a first thin-film cover and a second structure;
wherein the first thin-film cover covers the first structure without touching the first structure,
wherein the second structure is arranged directly on or above the first thin-film cover, and
wherein at least one of the first and second structures comprises a MEMS structure.

2. The component according to claim 1 , wherein the first structure and the second structure are each selected from: an SAW structure, a BAW structure, and a GBAW structure.

3. The component according to claim 1 , wherein the first structure and the second structure substantially have the same construction or are of the same type, and are arranged either with an identical orientation with respect to one another one directly above the other or with a lateral offset one above the other.

4. The component according to claim 1 , wherein the first and second structures are constructed symmetrically with respect to a mirror plane between the first and second structures and are arranged one directly above the other or with a lateral offset one above the other.

5. The component according to claim 1 , wherein the first structure is arranged in a cavity between a carrier substrate and the first thin-film cover.

6. The component according to claim 1 , wherein a planarization layer having a planar surface is arranged on the first thin-film cover.

7. The component according to claim 1 ,
wherein the first structure and the second structure in each case comprise an acoustically active region, and
wherein the acoustically active region of the first structure is acoustically decoupled with the acoustically active region of the second structure.

8. The component according to claim 1 , further comprising:
a plated-through hole through the first thin-film cover;
wherein the first structure and the second structure in each case comprise an electrically conductive electrode, and
wherein the electrically conductive electrode of the first and second structures are interconnected via the plated-through hole.

9. The component according to claim 1 , wherein the first structure and the second structure are interconnected and are together at least parts of a balun or duplexer circuit.

10. The component according to claim 1 , further comprising a circuit element which is arranged between the first structure and the second structure and is interconnected at least with the first structure or the second structure.

11. The component according to claim 10 , wherein the circuit element is a capacitive or inductive element.

12. The component according to claim 1 , wherein the first thin-film cover comprises at least one layer produced by a thin film package technology and comprises a material selected from the group consisting of silicon, silicon nitride, aluminum nitride, aluminum oxide, a metal, and a polymer.

13. A method for producing a component, the method comprising:
providing a first carrier;
producing a first structure on the first carrier;
producing a first thin-film cover above the first structure, wherein the first thin-film cover covers the first structure without touching it, wherein the first structure is fully enclosed by the first carrier and the first thin-film cover; and
producing a second structure directly on or above the first thin-film cover, wherein at least one of the first and second structures comprises a MEMS structure.

14. The method according to claim 13 , wherein the first structure and the second structure are each selected from: an SAW structure, a BAW structure, and a GBAW structure.

15. The method according to claim 13 , wherein the first structure and the second structure comprise an acoustic device.

16. The method according to claim 13 , wherein the first structure and the second structure are interconnected and are together at least parts of a balun or duplexer circuit.

17. The method for producing a component according to claim 13 , further comprising:
applying a first sacrificial layer on the first structure;
depositing the first thin-film cover on the first sacrificial layer; and
removing the first sacrificial layer after the deposition of the first thin-film cover.

18. The method according to claim 13 , wherein producing the first thin-film cover comprises producing at least one layer using a thin film package technology, and wherein the thin-film cover comprises a material selected from the group consisting of silicon, silicon nitride, aluminum nitride, aluminum oxide, a metal, and a polymer.

19. The method according to claim 13 , further comprising arranging a capacitive or inductive circuit element between the first structure and the second structure and interconnecting the circuit element at least with the first structure or the second structure.

20. A method for producing a component, the method comprising:
producing a first and a second component part and joining together both component parts;
wherein producing the first component part comprises:
providing a first carrier,
producing a first structure on the first carrier,
producing a first thin-film cover above the first structure, wherein the first thin-film cover covers the first structure without touching it, and

wherein producing the second component part comprises:
providing a second carrier, and
producing a second structure on the second carrier, wherein at least one of the first and second structures comprises a MEMS structure.

Assignees

• Snaptrack Inc
• Snaptrack Inc

Inventors

• Henn Gudrun
• Metzger Thomas

Classifications

• H03H9/0547 Primary

  consisting of a vertical arrangement (H03H9/0566 takes precedence) · CPC title

• H05K13/00

  Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components · CPC title

• H05K3/30

  Assembling printed circuits with electric components, e.g. with resistors · CPC title

• H05K13/0023

  Electricity · mapped topic

• H01L41/0533 Primary

  Electricity · mapped topic