Systems and methods for manufacturing diamond coated wires

US9873159B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9873159-B2
Application numberUS-201514983954-A
CountryUS
Kind codeB2
Filing dateDec 30, 2015
Priority dateDec 30, 2014
Publication dateJan 23, 2018
Grant dateJan 23, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for designing a diamond coated wire for use in a wafer slicing system includes adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated, wherein the intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and wherein penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution. The method may include adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size, and manufacturing the diamond coated wire such that the diamond coated wire has a plurality of diamond grits that fit the final diamond size distribution.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for designing a diamond coated wire for use in a wafer slicing system, the method comprising: adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated, wherein the intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and wherein penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution; adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size; and manufacturing the diamond coated wire such that the diamond coated wire has a plurality of diamond grits that fit the final diamond size distribution. 2. The method of claim 1 , wherein adjusting an initial diamond size distribution comprises adjusting a diamond size range of the initial diamond size distribution. 3. The method of claim 2 , wherein adjusting a diamond size range comprises reducing the diamond size range of the initial diamond size distribution. 4. The method of claim 2 , wherein reducing the diamond size range comprises reducing the diamond size range to approximately 8 microns. 5. The method of claim 1 , wherein adjusting an initial diamond size distribution comprises adjusting a standard deviation of the initial diamond size distribution. 6. The method of claim 5 , wherein adjusting a standard deviation comprises increasing the standard deviation of the initial diamond size distribution. 7. The method of claim 1 , wherein adjusting an initial diamond size distribution comprises maintaining an average diamond size of the initial diamond size distribution. 8. The method of claim 1 , wherein the predetermined penetration thickness value is approximately 5 microns. 9. The method of claim 1 , wherein adjusting the intermediate diamond size distribution comprises adjusting an average diamond size of the intermediate diamond size distribution. 10. The method of claim 9 , wherein adjusting an average diamond size of the intermediate diamond size distribution comprises increasing the average diamond size of the intermediate diamond size distribution. 11. The method of claim 1 , wherein the predetermined maximum diamond grit size is between approximately 20 microns and 23 microns. 12. The method of claim 1 , wherein the simulated penetration thickness value is an average penetration thickness value. 13. The method of claim 1 , wherein the simulated penetration thickness value is a maximum penetration thickness value. 14. The method of claim 1 , wherein penetration thickness is defined as a thickness of ingot material that a diamond grit oriented substantially orthogonal to a resulting wafer surface would need to cut through to reach the resulting wafer surface. 15. The method of claim 1 , wherein adjusting an initial diamond size distribution comprises: reducing a diamond size range of the initial diamond size distribution; and increasing a standard deviation of the initial diamond size distribution. 16. A diamond coated wire for use in a wafer slicing system, the diamond coated wire comprising a plurality of diamond grits fitting a predetermined diamond size distribution, wherein the predetermined diamond size distribution has a simulated penetration thickness value less than or equal to approximately 5 microns, wherein penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using the diamond coated wire, and wherein the predetermined diamond size distribution has a maximum diamond grit size between approximately 20 microns and 23 microns. 17. The diamond coated wire of claim 16 , wherein the predetermined diamond size distribution has a diamond size range less than or equal to approximately 8 microns. 18. The diamond coated wire of claim 16 , wherein the predetermined diamond size distribution has a diamond size range that extends from approximately 12 microns to 20 microns. 19. The diamond coated wire of claim 16 , wherein the predetermined diamond size distribution has a standard deviation greater than or equal to approximately 1.6 microns. 20. The diamond coated wire of claim 16 , wherein the predetermined diamond size distribution has a standard deviation greater than or equal to approximately 3.2 microns.

Assignees

Inventors

Classifications

  • by cutting with wires or closed-loop blades (B28D5/042 takes precedence) · CPC title

  • Saw wires; Saw cables; Twisted saw strips · CPC title

  • B23D65/00Primary

    Making tools for sawing machines or sawing devices for use in cutting any kind of material · CPC title

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Frequently asked questions

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What does patent US9873159B2 cover?
A method for designing a diamond coated wire for use in a wafer slicing system includes adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated, wherein the intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and wherein penetration thi…
Who is the assignee on this patent?
Sunedison Inc, Corner Star Ltd
What technology area does this patent fall under?
Primary CPC classification B23D65/00. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jan 23 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).