Voltage-resistant switch

Patent metadata

Field	Value
Publication number	US-9871505-B2
Application number	US-201615382934-A
Country	US
Kind code	B2
Filing date	Dec 19, 2016
Priority date	Dec 17, 2015
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

A voltage-resistant switch is described. The switch comprises a signal input, a first FET transistor with a first channel with an extended drain and a first gate connector and a second FET transistor with a first channel with an extended drain and a second gate connector. A control signal connector is connected with the first gate connector and with the second gate connector via a second node and with the first channel and the second channel via a second resistor, and a signal connector is connected with the second channel. The voltage-resistant switch can be switched on and off.

First claim

What is claimed is:

1. A voltage-resistant switch comprising:
a signal input;
a first FET transistor with a first channel with an extended drain and a first gate connector;
a second FET transistor with a second channel with an extended drain and a second gate connector;
a control signal connector connected with the first gate connector and the second gate connector via a second node, and with the first channel and the second channel via a second resistor; and
a signal connector connected with the second channel.

2. The voltage-resistant switch according to claim 1 , wherein the control signal connector comprises a third FET transistor that is arranged between the second node and a neutral conductor and has a third gate connector connected with a control signal (V inon ).

3. The voltage-resistant switch according to claim 2 , wherein a third node between the second channel and the signal connector is connected with a fourth FET transistor, and wherein the fourth FET transistor comprises a fourth drain connector connected with the third node, a fourth source connector connected with the third FET transistor via the neutral conductor, a fourth gate connector connected with a fifth FET transistor via the fifth drain connector, and wherein the fifth FET transistor has a fifth gate connector connected with the third FET transistor via the neutral conductor and a fifth source connector connected with a supply voltage (V dd ).

4. The voltage-resistant switch according to claim 1 , wherein the first FET transistor has a first drain connector, a first source connector and a first bulk connector, wherein the first drain connector is connected with the signal input and the first source connector is connected with the second channel of the second FET transistor and the first channel extends between the first drain connector and the first source connector.

5. The voltage-resistant switch according to claim 4 , wherein the first bulk connector is connected with the first drain connector via a first resistor.

6. The voltage-resistant switch according to claim 4 , wherein the first drain connector has an extended well.

7. The voltage-resistant switch according to claim 1 , wherein the second FET transistor has a second drain connector, a second source connector and a second bulk connector, wherein the second drain connector is connected with the signal connector and the second source connector is connected with the first channel of the first FET transistor and the second channel extends between the second drain connector and the second source connector.

8. The voltage-resistant switch according to claim 7 , wherein the second bulk connector is connected with the second drain connector.

9. The voltage-resistant switch according to claim 7 , wherein the second drain connector has an extended well.

10. The voltage-resistant switch according to claim 1 , wherein an input resistor is connected between the signal input and the first FET transistor.

11. The voltage-resistant switch according to claim 1 , wherein a third node between the second channel and the signal connector is connected with a fourth FET transistor, and wherein the fourth FET transistor comprises a fourth drain connector connected with the third node, a fourth source connector connected with the neutral conductor, and a fourth gate connector to which a further signal can be applied.

Assignees

• Micronas Gmbh
• Tdk-Micronas Gmbh

Inventors

• Desel Thomas

Classifications

• H03K17/08104 Primary

  in field-effect transistor switches (H03K17/0812, H03K17/0814 take precedence) · CPC title

• H01L27/088

  Electricity · mapped topic

• H03K17/6874

  in a symmetrical configuration · CPC title

• H10D30/603

  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS] · CPC title

• H10D84/83

  of only insulated-gate FETs [IGFET] · CPC title