RGBZ pixel unit cell with first and second Z transfer gates

Patent metadata

Field	Value
Publication number	US-9871065-B2
Application number	US-201414579965-A
Country	US
Kind code	B2
Filing date	Dec 22, 2014
Priority date	Dec 22, 2014
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.

First claim

The invention claimed is:

1. An apparatus, comprising:
an image sensor comprising a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode, the visible light photodiodes and the infra-red photodiode coupled to a particular column of the pixel array, the unit cell having a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes, the unit cell having a readout circuit to provide the first capacitor's voltage on the particular column, the unit cell having a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure, the first capacitor being coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.

2. The apparatus of claim 1 wherein the second capacitor is coupled to the readout circuit, the readout circuit to also provide the second capacitor's voltage on the particular column.

3. The apparatus of claim 2 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

4. The apparatus of claim 2 wherein the second capacitor is coupled to the first capacitor through a transistor.

5. The apparatus of claim 1 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

6. The apparatus of claim 1 wherein the second capacitor is coupled to the first capacitor through a transistor.

7. The apparatus of claim 1 wherein the visible light photodiodes and the infrared photodiode are coupled to respective back-drain transistors.

8. The apparatus of claim 1 wherein the unit cell further comprises a second readout circuit coupled to the second capacitor, the second readout circuit to provide the second capacitor's voltage on the particular column.

9. The apparatus of claim 1 wherein the unit cell further comprises a back-drain transistor coupled to said infra-red photodiode.

10. The apparatus of claim 9 wherein the unit cell further comprises a respective back-drain transistor coupled to each of the visible light photodiodes.

11. A computing system, comprising:
an applications processor having multiple processing cores coupled to a memory controller, said memory controller coupled to a system memory;
a camera system coupled to said applications processor, said camera system comprising an image sensor comprising a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode, the visible light photodiodes and the infra-red photodiode coupled to a particular column of the pixel array, the unit cell having a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes, the unit cell having a readout circuit to provide the first capacitor's voltage on the particular column, the unit cell having a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure, the first capacitor being coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.

12. The computing system of claim 11 wherein the second capacitor is coupled to the readout circuit, the readout circuit to also provide the second capacitor's voltage on the particular column.

13. The computing system of claim 11 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

14. The computing system of claim 11 wherein the second capacitor is coupled to the first capacitor through a transistor.

15. The computing system of claim 11 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

16. The computing system of claim 11 wherein the second capacitor is coupled to the first capacitor through a transistor.

17. The computing system of claim 11 wherein the visible light photodiodes and the infrared photodiode are coupled to respective back-drain transistors.

18. The computing system of claim 11 wherein the unit cell further comprises a second readout circuit coupled to the second capacitor, the second readout circuit to provide the second capacitor's voltage on the particular column.

Assignees

• Google Inc

Inventors

• Wan Chung Chun
• Fowler Boyd

Classifications

• H04N25/00

  Circuitry of solid-state image sensors [SSIS]; Control thereof · CPC title

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N23/11

  for generating image signals from visible and infrared light wavelengths · CPC title

• H04N23/57

  Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices · CPC title

• H04N25/705

  Pixels for depth measurement, e.g. RGBZ · CPC title