RGBZ pixel cell unit for an RGBZ image sensor

Patent metadata

Field	Value
Publication number	US-9425233-B2
Application number	US-201414579988-A
Country	US
Kind code	B2
Filing date	Dec 22, 2014
Priority date	Dec 22, 2014
Publication date	Aug 23, 2016
Grant date	Aug 23, 2016

Abstract

An image sensor is described. The image sensor includes a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible light photodiodes. The unit cell having a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell having a second capacitor that is coupled to the infra-red photodiode through a transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The unit cell has a back-drain transistor coupled to the infra-red photodiode.

First claim

The invention claimed is:

1. An apparatus, comprising:
an image sensor comprising a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode, the visible light photodiodes and the infra-red photodiode coupled to a particular column of the pixel array, the unit cell having a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes, the unit cell having a readout circuit to provide the first capacitor's voltage on the particular column, the unit cell having a second capacitor that is coupled to the infra-red photodiode through a transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure, the unit cell comprising a back-drain transistor coupled to the infra-red photodiode.

2. The apparatus of claim 1 wherein the second capacitor is coupled to the readout circuit, the readout circuit to also provide the second capacitor's voltage on the particular column.

3. The apparatus of claim 2 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

4. The apparatus of claim 2 wherein the visible light photodiodes are coupled to respective transfer gate transistors and respective back-drain transistors.

5. The apparatus of claim 1 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

6. The apparatus of claim 1 wherein the visible light photodiodes are coupled to respective transfer gate transistors and respective back-drain transistors.

7. The apparatus of claim 1 wherein the second capacitor is larger than the first capacitor.

8. The apparatus of claim 1 wherein the unit cell further comprises a second readout circuit coupled to the second capacitor, the second readout circuit to provide the second capacitor's voltage on the particular column.

9. The apparatus of claim 1 wherein the back-drain transistor is coupled to the first capacitor.

10. The apparatus of claim 1 wherein the first capacitor is coupled to the second capacitor through a transistor.

11. A method, comprising:
transferring first charge from a first photodiode that has received visible light of a first type into a storage capacitor and reading out a first voltage of the storage capacitor at a pixel array column;
transferring second charge from a second photodiode that has received visible light of a second type into the storage capacitor and reading out a second voltage of the storage capacitor at the pixel array column;
transferring third charge from a third photodiode that has received visible light of a third type into the storage capacitor and reading out a third voltage of the storage capacitor at the pixel array column; and,
transferring fourth charge from a fourth photodiode that has received infra red light during a time-of-flight exposure into a second storage capacitor and reading out a fourth voltage of the second storage capacitor at the pixel array column.

12. The method of claim 11 further comprising transferring said fourth charge during an exposure time of the fourth photo-diode and performing said transferring of any of said first, second and third charges during said exposure time.

13. The method of claim 11 further comprising transferring said fourth charge during an exposure time of the fourth photo-diode and permitting fifth charge from any of said first, second and third photo-diodes to flow into a supply node during said exposure time.

14. The method of claim 11 further comprising transferring said fourth charge during an exposure time of the fourth photo-diode and performing said reading out of any of said first, second and third voltages during said exposure time.

15. The method of claim 11 further comprising reading out said first, second, third and fourth voltages with a same readout circuit.

16. The method of claim 11 further comprising clearing said first, second and third voltages from said first capacitor and clearing said fourth voltage from said second capacitor with a same reset transistor.

17. A computing system, comprising:
an applications processor having multiple processing cores coupled to a memory controller, said memory controller coupled to a system memory;
a camera system coupled to said applications processor, said camera system comprising an image sensor, said image sensor comprising a pixel array having a unit cell that includes visible light photodiodes and an infra-red photodiode, the visible light photodiodes and the infra-red photodiode coupled to a particular column of the pixel array, the unit cell having a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes, the unit cell having a readout circuit to provide the first capacitor's voltage on the particular column, the unit cell having a second capacitor that is coupled to the infra-red photodiode through a transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure, the unit cell comprising a back-drain transistor coupled to the infra-red photodiode.

18. The computing system of claim 17 wherein the second capacitor is coupled to the readout circuit, the readout circuit to also provide the second capacitor's voltage on the particular column.

19. The computing system of claim 18 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

20. The computing system of claim 18 wherein the visible light photodiodes are coupled to respective transfer gate transistors and respective back-drain transistors.

21. The computing system of claim 17 wherein the unit cell comprises a reset transistor that is coupled to both the first and second capacitors to clear respective charge from the first capacitor and the second capacitor.

22. The computing system of claim 17 wherein the visible light photodiodes are coupled to respective transfer gate transistors and respective back-drain transistors.

23. The computing system of claim 17 wherein the back-drain transistor is coupled to the first capacitor.

24. The computing system of claim 17 wherein the first capacitor is coupled to the second capacitor through a transistor.

25. The computing system of claim 17 wherein the second capacitor is larger than the first capacitor.

Assignees

• Google Inc

Inventors

• Wan Chung Chun
• Fowler Boyd

Classifications

• H04N25/00

  Circuitry of solid-state image sensors [SSIS]; Control thereof · CPC title

• H04N25/705

  Pixels for depth measurement, e.g. RGBZ · CPC title

• H04N25/767

  Horizontal readout lines, multiplexers or registers · CPC title

• H04N25/587 Primary

  acquired sequentially, e.g. using the combination of odd and even image fields · CPC title

• H04N25/778

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title