Substrate treatment method and substrate treatment apparatus
US-2024162032-A1 · May 16, 2024 · US
US9870933B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9870933-B2 |
| Application number | US-201313762681-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2013 |
| Priority date | Feb 8, 2013 |
| Publication date | Jan 16, 2018 |
| Grant date | Jan 16, 2018 |
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An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing nozzle is positioned closer to an axis of rotation than the second liquid-dispensing nozzle. A liquid supply system supplies heated process liquid to the nozzles such that process liquid dispensed from the first nozzle has a temperature that differs by an amount within a predetermined range from a temperature of process liquid dispensed from the second liquid-dispensing nozzle.
Opening claim text (preview).
What is claimed is: 1. An apparatus for processing a wafer, the apparatus comprising: a rotary chuck adapted to hold and rotate the wafer about an axis of rotation; first and second liquid-dispensing nozzles mounted at a fixed distance from one another, wherein the first liquid-dispensing nozzle is positioned closer to the axis of rotation than the second liquid-dispensing nozzle; a liquid supply system configured to supply a same process liquid via a same inlet conduit to the first liquid-dispensing nozzle and the second liquid-dispensing nozzle, wherein the liquid supply system comprises one or more heaters, and the one or more heaters are configured to heat at least one of a first portion of the process liquid dispensed from the first liquid-dispensing nozzle to a first temperature, or a second portion of the process liquid dispensed from the second liquid-dispensing nozzle to a second temperature, and a difference between the first temperature and the second temperature is within a predetermined range; and a manifold, wherein the one or more heaters include a single heater, the single heater is disposed within the manifold and extends from a first end of the manifold and across the first liquid-dispensing nozzle and the second liquid dispensing nozzle, the process liquid enters the manifold at a second end of the manifold, passes across the single heater and to the first liquid-dispensing nozzle and the second liquid-dispensing nozzle, the second end is opposite the first end, the first liquid-dispensing nozzle is closer to the second end than the second liquid-dispensing nozzle, and the single heater heats the first portion of the process liquid more than the second portion of the process liquid.
for wet etching · CPC title
using mainly spraying means, e.g. nozzles · CPC title
Cleaning during device manufacture · CPC title
Temperature monitoring · CPC title
using mainly spraying means, e.g. nozzles · CPC title
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