Conditioned semiconductor system parts
US-2015275361-A1 · Oct 1, 2015 · US
US9869013B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9869013-B2 |
| Application number | US-201414262644-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2014 |
| Priority date | Apr 25, 2014 |
| Publication date | Jan 16, 2018 |
| Grant date | Jan 16, 2018 |
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Official abstract text for this publication.
A method of manufacturing an article comprises providing an article such as a chamber component for an etch reactor. A plasma spray deposition process is performed for deposit a first protective layer over at least one surface of the chamber component. The first protective layer is a plasma resistant ceramic having a thickness of greater than approximately 50 microns and a plurality of cracks and pores. An ion assisted deposition (IAD) process is then performed to deposit a second protective layer over the first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals the plurality of cracks and pores of the first protective layer.
Opening claim text (preview).
What is claimed is: 1. A method comprising: performing physical vapor deposition (PVD) with a metallic target consisting of an Erbium Aluminum Alloy to deposit a first protective layer consisting of a plasma resistant ceramic on at least one surface of an article, the article comprising a chamber component of a processing chamber, wherein the plasma resistant ceramic consists of Er 3 Al 5 O 12 and has an amorphous structure; performing at least one of flowing Oxygen radicals from a first source into a deposition chamber containing the article at a flow rate or bombarding the article with Oxygen ions from a second source while performing the PVD, wherein the first source is a plasma source, and wherein the metallic target is evaporated or sputtered to react with at least one of the Oxygen radicals from the first source or the Oxygen ions from the second source and form the first protective layer consisting of the plasma resistant ceramic in situ as a result of the PVD; and depositing a second protective layer over the first protective layer, the second protective layer comprising Er 2 O 3 , wherein the second protective layer has a crystalline or nano-crystalline structure. 2. The method of claim 1 , further comprising: gradually increasing the flow rate of the Oxygen radicals while performing the PVD, wherein the deposited first protective layer comprises a first Oxygen content at a bottom of the first protective layer and a higher second Oxygen content at a top of the first protective layer. 3. The method of claim 1 , wherein the article comprises a third protective layer that has been deposited by a plasma spray process, the third protective layer having a thickness of greater than approximately 50 microns that comprises a plurality of cracks and pores that are sealed by the first protective layer. 4. The method of claim 1 , wherein depositing the second protective layer comprises performing PVD with a metallic Er target. 5. The method of claim 1 , further comprising: concurrent to performing PVD with the metallic target, performing PVD with a second metallic target that has a same composition as the metallic target to deposit the first protective layer on the at least one surface of the article, wherein co-deposition using the metallic target and the second metallic target results in an increased deposition rate.
Absolute thicknesses specified · CPC title
Plasma spraying · CPC title
including ceramic, glass, porcelain or quartz layer · CPC title
including components having same physical characteristic in differing degree · CPC title
Controlling the composition · CPC title
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