Integrated circuit package with thermally conductive pillar

Patent metadata

Field	Value
Publication number	US-9865570-B1
Application number	US-201715431915-A
Country	US
Kind code	B1
Filing date	Feb 14, 2017
Priority date	Feb 14, 2017
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

Embodiments of the present disclosure relate to an integrated circuit (IC) package, including a molding compound positioned on a first die and laterally adjacent to a stack of dies positioned on the first die. The stack of dies electrically couples the first die to an uppermost die, and a thermally conductive pillar extends through the molding compound from the first die to an upper surface of the molding compound. The thermally conductive pillar is electrically isolated from the stack of dies and the uppermost die. The thermally conductive pillar laterally abuts and contacts the molding compound.

First claim

What is claimed is:

1. An integrated circuit (IC) package comprising:
a molding compound positioned on a first die and laterally adjacent to a stack of dies positioned on the first die, wherein the stack of dies electrically couples the first die to an uppermost die in the stack of dies; and
a thermally conductive pillar extending through the molding compound from the first die to an upper surface of the molding compound, wherein the thermally conductive pillar is electrically isolated from the stack of dies and the uppermost die, and wherein the thermally conductive pillar laterally abuts and contacts the molding compound.

2. The IC package of claim 1 , wherein the thermally conductive pillar comprises one of copper (Cu) or aluminum (Al).

3. The IC package of claim 1 , wherein the molding compound comprises a resinous material having one of silicon dioxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ) therein.

4. The IC package of claim 1 , wherein the thermally conductive pillar comprises one of a plurality of thermally conductive pillars positioned on the first die and electrically isolated from the stack of dies.

5. The IC package of claim 1 , further comprising a plurality of metal contacts positioned between the stack of dies and an interconnect pad, wherein the plurality of metal contacts electrically couples the first die to the interconnect pad.

6. The IC package of claim 1 , wherein an upper surface of the thermally conductive pillar is positioned at least approximately 250 micrometers (μm) above the first die.

7. The IC package of claim 1 , wherein an aspect ratio between an upper surface of the thermally conductive pillar and a lateral sidewall of the thermally conductive pillar is between approximately one-to-one and approximately two-to-one.

8. An integrated circuit (IC) package comprising:
a first die coupled to a plurality of metal contacts;
a stack of dies positioned on the first die and electrically coupled to the plurality of metal contacts;
a molding compound positioned on the first die and laterally adjacent to the stack of dies;
a thermally conductive pillar positioned on the first die and extending through the molding compound to an upper surface thereof, wherein the thermally conductive pillar is electrically isolated from the stack of dies and the plurality of metal contacts, and wherein the thermally conductive pillar laterally abuts and contacts the molding compound; and
an uppermost die contacting and overlying the stack of dies, wherein the molding compound electrically isolates the uppermost die from the thermally conductive pillar.

9. The IC package of claim 8 , wherein the thermally conductive pillar comprises one of copper (Cu) or aluminum (Al).

10. The IC package of claim 8 , wherein the molding compound comprises a resinous material having one of silicon dioxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ) therein.

11. The IC package of claim 8 , wherein the thermally conductive pillar comprises one of a plurality of thermally conductive pillars positioned on the first die and electrically isolated from the stack of dies.

12. The IC package of claim 8 , wherein the plurality of metal contacts electrically couples the first die to an interconnect pad positioned beneath the plurality of metal contacts.

Assignees

• Globalfoundries Inc

Inventors

• England Luke G
• Rivera Kathryn C

Classifications

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title