MoS2 thin film and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9863039-B2
Application number	US-201314908863-A
Country	US
Kind code	B2
Filing date	Aug 13, 2013
Priority date	Jul 31, 2013
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

The present disclosure relates to a MoS 2 thin film and a method for manufacturing the same. The present disclosure provides a MoS 2 thin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoS 2 thin film is manufactured by an atomic layer deposition method without using a toxic gas such as H 2 S as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoS 2 thin film by precisely controlling the thickness of the MoS 2 thin film to the level of an atomic layer.

First claim

The invention claimed is:

1. A method for manufacturing a MoS 2 thin film, the method comprising:
1) forming a chemical functional group layer comprising Mo on a substrate by supplying a molybdenum precursor into a reactor in vacuum state;
2) removing an excess molybdenum precursor that has not formed the chemical functional group layer comprising Mo and a byproduct by supplying an inert gas into the reactor after 1);
3) forming a MoS 2 atomic layer by chemically adsorbing a sulfur precursor on the chemical functional group layer comprising Mo by supplying the sulfur precursor into the reactor; and
4) removing a sulfur precursor that has not been adsorbed in 3) and a byproduct by supplying an inert gas into the reactor after 3);
wherein the molybdenum precursor is Mo(CO) 6 and the sulfur precursor is dimethyl disulfide, and
wherein the chemical adsorption of the sulfur precursor on the chemical functional group layer containing Mo in 3) is accomplished by atomic layer deposition (ALD) at a temperature of 100-120° C.

2. The method for manufacturing a MoS 2 thin film according to claim 1 , wherein, in 1), the molybdenum precursor is supplied at a pressure of 0.1-10 Torr.

3. The method for manufacturing a MoS 2 thin film according to claim 1 , wherein, in 3), the sulfur precursor is supplied at a pressure of 0.1-10 Torr.

4. The method for manufacturing a MoS 2 thin film according to claim 1 , further comprising repeating 1) through 4).

5. The method for manufacturing a MoS 2 thin film according to claim 1 , further comprising a heat treatment after 4).

6. The method for manufacturing a MoS 2 thin film according to claim 5 , wherein the heat treatment after 4) is performed at 400-1,000° C.

7. The method for manufacturing a MoS 2 thin film according to claim 4 , further comprising a heat treatment after a final repeat of 1) through 4).

8. The method for manufacturing a MoS 2 thin film according to claim 7 , wherein the heat treatment after 4) is performed at 400-1,000° C.

Assignees

• Univ Konkuk Ind Coop Corp

Inventors

• Min Yo-Sep

Classifications

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45555

  applied in non-semiconductor technology · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title

• C23C16/305 Primary

  Sulfides, selenides, or tellurides · CPC title