Boron nitride nanotubes and process for production thereof

Patent metadata

Field	Value
Publication number	US-9862604-B2
Application number	US-201414409128-A
Country	US
Kind code	B2
Filing date	Apr 4, 2014
Priority date	Apr 18, 2013
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

A process for producing boron nitride nanotubes (BNNTs) involves providing a one or more sources of boron, nitrogen and hydrogen to a stable induction plasma to form a reaction mixture of boron, nitrogen and hydrogen in the plasma, and cooling the reaction mixture to form BNNTs. The process is capable of very efficiently producing small (10 nm or less diameter), reasonably pure BNNTs continuously in high yield at or around atmospheric pressure without the need to use metals as the catalyst. The process may be further modified by providing one or more sources of carbon to produce BNNTs doped with carbon (e.g. BCNNT).

First claim

What is claimed is:

1. A process for producing boron nitride nanotubes (BNNTs) comprising providing one or more sources of boron, nitrogen and hydrogen to a stable induction plasma at a plasma temperature in a range of 1000-10,000 K to form a reaction mixture of boron, nitrogen and hydrogen in the plasma under a pressure of greater than 0.6 atm and less than 2 atm, and cooling the reaction mixture to form BNNTs, the one or more sources of boron comprising elemental boron, boron nitride, borane, ammonia borane, borazine, or any mixture thereof.

2. The process according to claim 1 , wherein the one or more sources of nitrogen comprises boron nitride, N 2 , NH 3 , NH 4 OH, borazine or any mixture thereof, and wherein the one or more sources of hydrogen comprises H 2 , NH 3 , NH 4 OH, a borane or any mixture thereof.

3. The process according to claim 1 , wherein the one or more sources of boron comprises hexagonal boron nitride, the one or more sources of nitrogen comprises a mixture of hexagonal boron nitride and N 2 and the one or more sources of hydrogen comprises H 2 .

4. The process according to claim 1 , wherein the one or more sources of boron is free of metal.

5. The process according to claim 1 , wherein at least one of the sources of nitrogen is a gas and at least one of the sources of hydrogen is a gas and the gases are provided to the stable induction plasma in a sheath gas.

6. The process according to claim 5 , wherein the sheath gas further comprises an inert gas.

7. The process according claim 5 , wherein the at least one source of hydrogen is present in the sheath gas in an amount of 5-20%.

8. The process according to claim 5 , wherein the at least one source of nitrogen is present in the sheath gas in an amount of 35-65%.

9. The process according to claim 1 , wherein the pressure is greater than 0.95 atm.

10. The process according to claim 1 , wherein the pressure is in a range of 0.9 atm to 1.9 atm.

11. The process according to claim 1 , wherein the pressure is in a range of 0.95 atm to 1.9 atm.

12. The process according to claim 1 , wherein the pressure is in a range of 0.9 atm to 1 atm.

13. The process according to claim 1 , wherein the reaction mixture is further provided with a metal catalyst.

14. The process according to claim 1 , wherein the reaction mixture further comprises a source of carbon and the BNNTs produced are doped with carbon.

15. The process according to claim 1 , wherein the stable induction plasma has a temperature in a range of 7,000-9,000K at a core of the plasma.

16. The process according to claim 1 , further comprising collecting the BNNTs by filtration in a filtration zone downstream of the reaction zone.

Assignees

• Nat Res Council Canada

Inventors

• Kim Keun Su
• Kingston Christopher T
• Simard Benoit

Classifications

• C01B21/064 Primary

  with boron · CPC title

• C01P2004/03

  obtained by SEM · CPC title

• C01P2002/88

  by thermal analysis data, e.g. TGA, DTA, DSC · CPC title

• C01P2004/13

  Nanotubes · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title