Thermally conductive silicone composition, production method thereof, and semiconductor device
US-12104113-B2 · Oct 1, 2024 · US
US2016115343A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016115343-A1 |
| Application number | US-201414896235-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 10, 2014 |
| Priority date | Jun 14, 2013 |
| Publication date | Apr 28, 2016 |
| Grant date | — |
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A thermosetting resin composition containing a thermosetting resin and an inorganic filler, in which the inorganic filler contains secondary sintered particles (A) formed of primary particles of boron nitride, which have an aspect ratio of 10 to 20, and secondary sintered particles (B) formed of the primary particles of boron nitride, which have an aspect ratio of 2 to 9. The thermosetting resin composition can produce a thermal conductive sheet that has excellent filling property of the inorganic filler, and excellent thermal conductivity, adhesiveness and electrical insulating properties.
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1 . A thermosetting resin composition containing a thermosetting resin and an inorganic filler, wherein the inorganic filler contains secondary sintered particles (A) formed of primary particles of boron nitride which have an aspect ratio of 10 to 20, and secondary sintered particles (B) formed of primary particles of boron nitride which have an aspect ratio of 2 to 9. 2 . The thermosetting resin composition according to claim 1 , wherein a specific surface area of the secondary sintered particles (A) is 4 m 2 /g to 15 m 2 /g, and the specific surface area of the secondary sintered particles (B) is less than 4 m 2 /g. 3 . The thermosetting resin composition according to claim 1 , wherein the compressive strength of the secondary sintered particles (A) is 6 MPa or more, and the compressive strength of the secondary sintered particles (B) is 3 MPa to 5 MPa. 4 . The thermosetting resin composition according to claim 1 , wherein a ratio of an average particle size of the secondary sintered particles (A) to that of the secondary sintered particles (B) is 0.8 to 10. 5 . The thermosetting resin composition according to claim 1 , wherein the average particle size of the secondary sintered particles (A) is 20 μm to 110 μm. 6 . The thermosetting resin composition according to claim 1 , wherein an average length of primary particles of the boron nitride, which form the secondary sintered particles (A) and the secondary sintered particles (B), is 0.1 μm to 30 μm. 7 . The thermosetting resin composition according to claim 1 , wherein a volume ratio of the secondary sintered particles (A) to the secondary sintered particles (B) is 5:95 to 90:10. 8 . The thermosetting resin composition according to claim 1 , wherein a content of the inorganic filler in a solid content of the thermosetting resin composition is 40% by volume to 80% by volume. 9 . A method of producing a thermal conductive sheet comprising coating and drying the thermosetting resin composition according to claim 1 on a mold-releasing base material, and a step of curing a coated and dried material while pressurizing under a pressing pressure of 0.5 MPa to 50 MPa. 10 . A power module comprising a power semiconductor element mounted on one heat dissipation member, another heat dissipation member that externally dissipates heat generated by the power semiconductor element, and the thermal conductive sheet that transmits the heat generated by the semiconductor element from the one heat dissipation member to the other heat dissipation member and is produced according to the production method of the thermal conductive sheet according to claim 9 . 11 . The power module according to claim 10 , wherein the power semiconductor element is formed of a wide band gap semiconductor. 12 . The power module according to claim 11 , wherein the wide band gap semiconductor is silicon carbide, a gallium nitride-based material or diamond.
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
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of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title
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