Deposition of aluminum oxide etch stop layers

Patent metadata

Field	Value
Publication number	US-9859153-B1
Application number	US-201615350911-A
Country	US
Kind code	B1
Filing date	Nov 14, 2016
Priority date	Nov 14, 2016
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5 g/cm 3 (such as about 3.0-3.2 g/cm 3 ) are deposited on partially fabricated semiconductor devices over both metal and dielectric to serve as etch stop layers. The films are deposited using a deposition method that does not lead to oxidative damage of the metal. The deposition involves reacting an aluminum-containing precursor (e.g., a trialkylaluminum) with an alcohol and/or aluminum alkoxide. In one implementation the method involves flowing trimethylaluminum to the process chamber housing a substrate having an exposed metal and dielectric layers; purging and/or evacuating the process chamber; flowing t-butanol to the process chamber and allowing it to react with trimethylaluminum to form an aluminum oxide film and repeating the process steps until the film of desired thickness is formed.

First claim

What is claimed is:

1. A method for processing a semiconductor substrate, the method comprising:
(a) providing a semiconductor substrate comprising an exposed dielectric layer and an exposed metal layer; and
(b) forming an aluminum oxide etch stop film over and in contact with the dielectric layer and the metal layer by reacting an aluminum-containing precursor with a reactant selected from the group consisting of an alcohol and an aluminum alkoxide, wherein the formed aluminum oxide etch stop film has a dielectric constant of less than about 7, and a density of at least about 2.5 g/cm 3 .

2. The method of claim 1 , wherein the exposed metal layer is an exposed cobalt layer.

3. The method of claim 1 , wherein the exposed metal layer is an exposed cobalt layer, and wherein cobalt oxide is not formed at an interface between the cobalt layer and the aluminum oxide etch stop film, after the aluminum oxide etch stop film is formed.

4. The method of claim 1 , wherein forming the aluminum oxide etch stop film comprises reacting the aluminum-containing precursor with an alcohol containing at least four carbon atoms.

5. The method of claim 1 , wherein forming the aluminum oxide etch stop film comprises reacting trimethylaluminum with t-butanol.

6. The method of claim 1 , wherein the aluminum oxide etch stop film is formed by a reaction that occurs substantially on the surface of the semiconductor substrate.

7. The method of claim 1 , wherein the aluminum oxide etch stop film is formed by a reaction that occurs substantially off of the surface of the semiconductor substrate.

8. The method of claim 1 , wherein the aluminum oxide etch stop film is formed to a thickness of between about 10-100 Å.

9. The method of claim 1 , wherein forming the aluminum oxide etch stop film comprises:
(i) in a process chamber housing the semiconductor substrate, adsorbing the aluminum-containing precursor to the surface of the semiconductor substrate, wherein the aluminum-containing precursor is a trialkylaluminum;
(ii) after the aluminum-containing precursor has adsorbed, purging and/or evacuating the process chamber;
(iii) after purging, providing an alcohol having at least four carbon atoms to the process chamber and allowing the alcohol to react with the adsorbed aluminum-containing precursor and form aluminum oxide;
(iv) after the reacting, purging and/or evacuating the process chamber; and
(v) repeating (i)-(iv).

10. The method of claim 9 , wherein (iii) is performed in an absence of plasma.

11. The method of claim 9 , wherein the aluminum oxide etch stop film is formed at a temperature of between about 50-400° C. and at a pressure of between about 0.5-8 Torr.

12. The method of claim 9 , wherein (i) comprises flowing the aluminum-containing precursor to the process chamber for about 0.1-10 seconds.

13. The method of claim 9 , wherein (iii) comprises flowing the alcohol to the process chamber for about 0.1-10 seconds.

14. The method of claim 9 , wherein (v) comprises repeating (i)-(iv) at least 3 times.

15. The method of claim 1 , wherein the aluminum oxide etch stop film has a dielectric constant of less than about 6 and a density of at least about 2.8 g/cm 3 .

16. The method of claim 1 , wherein the aluminum oxide etch stop film has a dielectric constant of about 4-6 and a density of about 3.0-3.2 g/cm 3 .

17. The method of claim 1 , wherein the exposed layer of dielectric is a layer of ultra low k (ULK) dielectric and wherein the exposed layer of metal comprises a metal selected from the group consisting of cobalt, copper, and tungsten.

18. The method of claim 1 , further comprising:
applying photoresist to the semiconductor substrate;
exposing the photoresist to light;
patterning the photoresist and transferring the pattern to the semiconductor substrate; and
selectively removing the photoresist from the semiconductor substrate.

19. The method of claim 1 , further comprising depositing a layer of dielectric over the aluminum oxide layer, and etching recessed features in the deposited layer of dielectric in a presence of exposed etch stop layer.

20. The method of claim 19 , further comprising removing a portion of the aluminum oxide etch stop layer, after the recessed features have been formed.

Assignees

• Lam Res Corp

Inventors

• Rainville Meliha Gozde
• Shankar Nagraj
• Reddy Kapu Sirish
• Hausmann Dennis M

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title