Apparatus and method of treating surface of semiconductor substrate

Patent metadata

Field	Value
Publication number	US-9859111-B2
Application number	US-201514925805-A
Country	US
Kind code	B2
Filing date	Oct 28, 2015
Priority date	Dec 11, 2009
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

First claim

What is claimed is:

1. A method of treating a surface of a semiconductor substrate, comprising:
forming a convex pattern on the semiconductor substrate by a process including a dry etching, the surface of the convex pattern containing a silicon;
supplying a silane coupling agent onto the convex pattern to form a protective film on the surface of the convex pattern;
supplying a rinsing agent containing alcohol onto the surface of the semiconductor substrate where the silane coupling agent is remaining to rinse the semiconductor substrate; and
drying the rinsed semiconductor substrate by removing the rinsing agent from the semiconductor substrate.

2. The method according to claim 1 , wherein the surface of the convex pattern is oxidized before supplying the silane coupling agent onto the convex pattern, and the protective film is formed on the oxidized surface of the convex pattern.

3. The method according to claim 1 , wherein the semiconductor substrate is rinsed by using alcohol before supplying the silane coupling agent onto the convex pattern.

4. The method according to claim 1 , wherein the convex pattern has an aspect ratio of eight or more.

5. The method according to claim 1 , wherein the convex pattern comprises a silicon nitride or a polysilicon.

6. The method according to claim 1 , further comprising:
removing the protective film with the convex pattern after drying the semiconductor substrate.

7. The method according to claim 1 , wherein the convex pattern is formed by depositing a film to cover side surfaces of a core material and removing the core materials to remain the film as the convex pattern.

8. The method according to claim 1 , wherein the alcohol contains IPA.

9. The method according to claim 1 , wherein during the rinsing process using the rinsing agent containing alcohol after forming the protective film and before drying the semiconductor substrate, pure water containing no alcohol is not used for rinsing the semiconductor substrate.

10. The method according to claim 1 , wherein the silane coupling agent includes HMDS.

11. The method according to claim 1 , wherein the silane coupling agent includes TMSDEA.

12. The method according to claim 1 , wherein the protective film is a water repellent protective film.

13. The method according to claim 1 , further comprising:
cleaning the semiconductor substrate having the convex pattern by supplying SPM, SC-1, SC-2, or HF onto the substrate before supplying the silane coupling agent onto the semiconductor substrate.

14. The method according to claim 1 , wherein the convex pattern has a pattern size of 30 nm or less.

15. The method according to claim 1 , wherein the convex pattern is a line and space pattern.

16. The method according to claim 1 , wherein the silane coupling agent is diluted with cyclohexanone or alcohol and the diluted silane coupling agent is supplied onto the convex pattern to form a protective film on the surface of the convex pattern.

17. The method according to claim 1 , wherein the rinsing agent is blown away from the surface of the semiconductor substrate by a spin-drying process during drying the rinsed semiconductor substrate.

18. The method according to claim 1 , wherein the rinsing agent is evaporated from the surface of the semiconductor substrate by subjecting the semiconductor substrate where the rinsing agent is remaining to air during drying the rinsed semiconductor substrate.

Assignees

• Toshiba Memory Corp

Inventors

• Ogawa Yoshihiro
• Koide Tatsuhiko
• Kimura Shinsuke
• Okuchi Hisashi
• Tomita Hiroshi

Classifications

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/10

  Cleaning before device manufacture, i.e. Begin-Of-Line process · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/266

  by vapour etching only · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title