Method for providing a multilayer AFM layer in a read sensor

Patent metadata

Field	Value
Publication number	US-9858951-B1
Application number	US-201514955375-A
Country	US
Kind code	B1
Filing date	Dec 1, 2015
Priority date	Dec 1, 2015
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

A method provides a read sensor stack including an antiferromagnetic (AFM) layer, a pinned layer on the AFM layer, a free layer, and a nonmagnetic layer between the free and pinned layers. Providing the AFM layer includes depositing an AFM layer first portion at a first elevated temperature and at a rate of at least 0.1 Angstrom/second. This AFM layer first portion is annealed in-situ at at least one hundred degrees Celsius. An AFM sublayer is deposited at an elevated temperature and at a sublayer deposition rate of less than 0.1 Angstrom/second. The already-deposited portion of the AFM layer is annealed in-situ at at least one hundred degrees Celsius and less than five hundred degrees Celsius. The sublayer depositing and annealing steps may be repeated in order at least once to provide an AFM layer second portion that has multiple sublayers and is thinner than the AFM layer first portion.

First claim

What is claimed is:

1. A method for providing a magnetic read apparatus, the method comprising:
depositing a first portion of an antiferromagnetic (AFM) layer, wherein the first portion is deposited at a first deposition rate, the first portion of the AFM layer having a first thickness;
depositing a second portion of the AFM layer over the first portion, the second portion comprising a plurality of sublayers, wherein each of the plurality of sublayers is deposited at a sublayer deposition rate that is less than the first deposition rate, the second portion of the AFM layer having a second thickness that is less than the first thickness;
annealing the first portion of the AFM layer before depositing the second portion of the AFM layer; and
annealing each of the plurality of sublayers in between depositing two of the plurality of sublayers.

2. The method of claim 1 wherein the first thickness is not more than ninety percent of a total thickness of the AFM layer.

3. The method of claim 1 wherein depositing each of the plurality of sublayers comprises depositing at least one Angstrom and not more than five Angstroms of an AFM material.

4. The method of claim 3 , further comprising depositing not more than three Angstroms of the AFM material.

5. The method of claim 1 wherein the first portion is deposited at a first deposition temperature and each of the plurality of sublayers is deposited at a second deposition temperature, and wherein the first deposition temperature and the second deposition temperature are within a temperature range.

6. The method of claim 1 wherein the annealing of each of the plurality of sublayers has an anneal time, the anneal time being not more than two hundred seconds.

7. The method of claim 1 wherein the annealing of each of the plurality of sublayers has an anneal time and the depositing of each of the plurality of sublayers has a deposition time, the anneal time not exceeding twice the deposition time.

8. The method of claim 1 wherein the first portion is annealed at a first annealing temperature and each of the plurality of sublayers is annealed at a second annealing temperature, wherein the first annealing temperature and the second annealing temperature are within a temperature range.

9. The method of claim 1 wherein the second thickness of the second portion of the AFM is not more than thirty Angstroms.

10. The method of claim 9 wherein the second thickness is at least seven Angstroms and not more than twenty Angstroms.

11. The method of claim 1 , further comprising:
depositing a ferromagnetic pinned layer on the AFM layer such that the ferromagnetic pinned layer and the AFM layer share an interface;
depositing a nonmagnetic layer on the ferromagnetic pinned layer; and
depositing a ferromagnetic free layer on the nonmagnetic layer.

12. The method of claim 11 , further comprising:
providing at least one side bias magnetic structure adjacent to the AFM layer, the ferromagnetic pinned layer, the nonmagnetic layer, and the ferromagnetic free layer.

13. The method of claim 1 wherein the first deposition rate does not exceed 0.3 Angstrom/second.

14. The method of claim 1 wherein the sublayer deposition rate is at least 0.01 Angstrom/second.

15. A method for providing a magnetic read apparatus, the method comprising:
depositing a first portion of an antiferromagnetic (AFM) layer at a first deposition rate, the first portion of the AFM layer having a first thickness;
annealing the first portion of the AFM layer;
depositing a second portion of the AFM layer over the first portion after annealing of the first portion, the second portion comprising a plurality of sublayers and having a second thickness that is less than the first thickness, wherein each of the plurality of sublayers is deposited at a sublayer deposition rate that is less than the first deposition rate;
annealing each of the plurality of sublayers after depositing each of the plurality of sublayers and before depositing a next sublayer;
depositing a ferromagnetic pinned layer on the AFM layer such that the ferromagnetic pinned layer and the AFM layer share an interface;
depositing a nonmagnetic layer on the ferromagnetic pinned layer; and
depositing a ferromagnetic free layer on the nonmagnetic layer.

16. The method of claim 15 further comprising:
providing at least one side bias magnetic structure adjacent to the AFM layer, the ferromagnetic pinned layer, the nonmagnetic layer, and the ferromagnetic free layer.

17. A method comprising:
depositing a first portion of an antiferromagnetic (AFM) layer at a first deposition rate, the first portion having a first thickness;
depositing a second portion of the AFM layer over the first portion at a second deposition rate that is less than the first deposition rate, wherein depositing the second portion comprises depositing a plurality of sublayers including a first sublayer, a second sublayer, a third sublayer, and a fourth sublayer, and wherein the second portion has a second thickness that is less than the first thickness;
annealing the first portion after depositing the first portion and before depositing the second portion; and
annealing each of the first sublayer, the second sublayer, the third sublayer, and the fourth sublayer after depositing each sublayer and before depositing a next sublayer.

18. The method of claim 1 , wherein depositing the second portion over the first portion comprises depositing the second portion directly over the first portion.

Assignees

• Western Digital (Fremont) Llc

Inventors

• Zheng Yuankai
• Leng Qunwen
• Jiang Xin
• Diao Zhitao
• Kaiser Christian

Classifications

• H01F1/0009 Primary

  Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature (H01F1/0036 takes precedence) · CPC title

• G11B5/1272 Primary

  Assembling or shaping of elements (G11B5/1278 takes precedence) · CPC title

• G11B5/3903 Primary

  using magnetic thin film layers or their effects, the films being part of integrated structures · CPC title

• H01F41/304

  using temporary decoupling, e.g. involving blocking, Néel or Curie temperature transitions by heat treatment in presence/absence of a magnetic field · CPC title

• H01F10/3268

  the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title