Data folding in 3D nonvolatile memory

Patent metadata

Field	Value
Publication number	US-9858009-B2
Application number	US-201514923137-A
Country	US
Kind code	B2
Filing date	Oct 26, 2015
Priority date	Oct 26, 2015
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

Data that is initially stored in Single Level Cell (SLC) blocks is subsequently copied (folded) to a Multi Level Cell (MLC) block where the data is stored in MLC format, the data copied in a minimum unit of a fold-set, the MLC block including a plurality of separately-selectable sets of NAND strings, data of an individual fold-set copied exclusively to two or more word lines of an individual separately-selectable set of NAND strings in the MLC block.

First claim

It is claimed:

1. A method of managing data in a three dimensional nonvolatile NAND memory comprising:
copying first data of a first fold-set from a Single Level Cell (SLC) portion of the three dimensional nonvolatile NAND memory where the first data is stored in SLC format to a Multi Level Cell (MLC) block where the first data is stored in MLC format along two or more word lines in a first separately-selectable set of NAND strings of the MLC block, a fold-set being a minimum unit of data folding; and
copying second data of a second fold-set from the SLC portion where the second data is stored in SLC format to the MLC block where the second data is stored in MLC format along two or more word lines in a second separately-selectable set of NAND strings of the MLC block.

2. The method of claim 1 further comprising scrambling the first and second data prior to storage in the MLC block, the fold-set being a minimum unit of data scrambling.

3. The method of claim 2 wherein data in the SLC portion is copied in fold-sets so that each fold-set is copied to an individual separately-selectable set of NAND strings of the MLC block and no fold-set extends across more than one separately-selectable set of NAND strings of the MLC block.

4. The method of claim 2 wherein the fold-set consists of eight logical pages of data, the first data consisting of data from eight sequential word lines of the SLC portion, the second data consisting of data from another eight sequential word lines of the SLC portion.

5. The method of claim 4 wherein the data of the fold-set is scrambled using a different offset scrambling key for each of the eight logical pages of data.

6. The method of claim 1 further comprising:
copying third data from the SLC portion where the third data is stored in SLC format to the MLC block where the third data is stored in MLC format along two or more word lines in a third separately-selectable set of NAND strings of the MLC block; and
copying fourth data from the SLC portion where the fourth data is stored in SLC format to an MLC block where the fourth data is stored in MLC format along two or more word lines in a fourth separately-selectable set of NAND strings of the MLC block.

7. The method of claim 1 wherein the MLC block consists of n separately-selectable sets of NAND strings, where n is greater than two, and wherein no two separately-selectable sets of NAND strings contain data copied from the same SLC block.

8. The method of claim 1 further comprising: identifying a separately-selectable set of NAND strings as defective, and subsequently storing no data in the separately-selectable set of NAND strings that is identified as defective.

9. The method of claim 1 wherein copying the first data to the MLC block is interleaved with copying the second data to the MLC block.

10. A system comprising:
a three-dimensional nonvolatile memory array that includes a plurality of Single Level Cell (SLC) blocks in an SLC portion where a memory cell stores one bit and a plurality of Multi Level Cell (MLC) blocks where a memory cell stores more than one bit; and
a data folding unit configured to copy a first fold-set from the SLC portion to a first separately-selectable set of NAND strings in an MLC block, and to copy a second fold-set from the SLC portion to a second separately-selectable set of NAND strings in the MLC block, the data folding unit configured to fold data in a minimum unit of a fold-set.

11. The system of claim 10 further comprising a data scrambling unit that scrambles data prior to storage in the MLC block, the data scrambling unit configured to scramble data in fold-sets, the fold-set being a minimum unit of data folding and scrambling.

12. The system of claim 10 wherein the MLC block contains n separately-selectable sets of NAND strings, the data folding unit configured to copy data from n SLC blocks to the n separately-selectable sets of NAND strings, data from an individual SLC block copied to an individual separately-selectable set of NAND strings.

13. The system of claim 10 wherein the data folding unit is configured to interleave copying of first data to the MLC block and copying of second data to the MLC block.

14. The system of claim 10 further comprising a bad string record that records locations of bad separately-selectable sets of NAND strings in the three dimensional nonvolatile memory array, the data folding unit configured to copy no data to any bad separately-selectable set of NAND strings.

15. The system of claim 14 further comprising a bad string identification unit that identifies separately-selectable sets of NAND strings that do not meet a predetermined standard.

16. A method of operating a three dimensional nonvolatile NAND memory comprising:
storing data in a plurality of Single Level Cell (SLC) blocks where the data is stored in SLC format; and
subsequently copying the data to a Multi Level Cell (MLC) block where the data is stored in MLC format, the data copied in a minimum unit of a fold-set, the MLC block including a plurality of separately-selectable sets of NAND strings, data of an individual fold-set copied exclusively to two or more word lines of an individual separately-selectable set of NAND strings in the MLC block.

17. The method of claim 16 wherein copying the data to the MLC block interleaves copying of data of a plurality of fold-sets.

18. The method of claim 16 further comprising scrambling the data prior to storage in the MLC block according to a scrambling scheme.

19. The method of claim 18 wherein the fold-set consists of data from X word lines in an individual SLC block and wherein the scrambling scheme applies a repetitive pattern that repeats every X word lines.

20. The method of claim 16 further comprising detecting a bad separately-selectable set of NAND strings in the MLC block and in response leaving data of corresponding fold-sets in the plurality of SLC blocks.

Assignees

• Sandisk Technologies Llc

Inventors

• Bhalerao Abhijeet
• Kochar Mrinal
• Ea Dennis S
• Palityka Mikhail
• Lee Aaron
• Ng Yew Yin
• Baran Ivan

Classifications

• G06F12/0246 Primary

  in block erasable memory, e.g. flash memory · CPC title

• G06F3/064 Primary

  Management of blocks · CPC title

• G06F3/0604

  Improving or facilitating administration, e.g. storage management · CPC title

• G06F3/065

  Replication mechanisms · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title