Method for preparing a recrystallised silicon substrate with large crystallites

Patent metadata

Field	Value
Publication number	US-9853181-B2
Application number	US-201415025498-A
Country	US
Kind code	B2
Filing date	Sep 24, 2014
Priority date	Sep 27, 2013
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

A method for preparing silicon substrate having average crystallite size greater than or equal to 20 μm, including at least the steps of: (i) providing polycrystalline silicon substrate of which average grain size is less than or equal to 10 μm; (ii) subjecting substrate to overall homogeneous plastic deformation, at temperature of at least 1000° C.; (iii) subjecting substrate to localized plastic deformation in plurality of areas of substrate, called external stress areas, spacing between two consecutive areas being at least 20 μm, local deformation of substrate being strictly greater than overall deformation carried out in step (ii); step (iii) being able to be carried out subsequent to or simultaneous to step (ii); and (iv) subjecting substrate obtained in step (iii) to recrystallization heat treatment in solid phase, at temperature strictly greater than temperature used in step (ii), in order to obtain desired substrate.

First claim

The invention claimed is:

1. A process for preparing a silicon substrate having an average crystallite size larger than or equal to 20 μm, comprising at least the steps consisting in:
(i) providing a polycrystalline silicon substrate the average grain size of which is lower or equal to 10 μm;
(ii) subjecting said substrate to an overall and uniform plastic deformation at a temperature of at least 1000° C.;
(iii) subjecting said substrate to a plastic deformation localized in a plurality of substrate zones referred to as zones of external stress, the spacing between two consecutive zones being at least 20 μm, the local deformation of the substrate being strictly greater than the overall deformation carried out in step (ii),

step (iii) possibly being carried out consecutively to or at the same time as step (ii); and
(iv) subjecting the substrate obtained at the end of step (iii) to a solid-phase recrystallization heat treatment, at a temperature strictly higher than the temperature implemented in step (ii), in order to obtain said expected substrate.

2. The process as claimed in claim 1 , in which said substrate in step (i) has an average grain size of 5 μm or less.

3. The process as claimed in claim 1 , in which step (ii) is carried out at a temperature comprised between 1100 and 1200° C.

4. The process as claimed in claim 1 , in which the step (ii) of overall plastic deformation is carried out by hot rolling.

5. The process as claimed in claim 4 , in which the step (ii) of overall plastic deformation is carried out using rolling rolls made of silicon carbide or silicon nitride.

6. The process as claimed in claim 1 , in which the uniform plastic deformation of the substrate at the end of step (ii) is comprised between 1 and 20%.

7. The process as claimed in claim 1 , in which the spacing between two consecutive zones is larger than or equal to 80 μm.

8. The process as claimed in claim 1 , in which the spacing between two consecutive zones is comprised between 200 μm and 2000 μm.

9. The process as claimed in claim 1 , in which the step (iii) of localized plastic deformation is carried out using a comb the tips of which are made of a material of Vickers hardness higher than or equal to 250 MPa.

10. The process as claimed in claim 9 , in which the tips of the comb are made of silicon carbide or silicon nitride.

11. The process as claimed in claim 9 , in which step (iii) is carried out via at least one step of compression of the surface of said zones using the comb.

12. The process as claimed in claim 9 , in which step (iii) is carried out via at least one operation of translating the comb over the surface of said zones, so as to introduce a shear deformation.

13. The process as claimed in claim 1 , in which the step (iii) of localized plastic deformation is carried out by exposing said zones to laser radiation.

14. The process as claimed in claim 13 , which the step (iii) of localized plastic deformation is carried out by exposing said zones at one or more wavelengths longer than or equal to 100 nm.

15. The process as claimed in claim 1 , in which step (iii) is carried out at a temperature strictly below 1000° C.

16. The process as claimed in claim 1 , in which step (iii) is carried out at a temperature higher than or equal to 1000° C.

17. The process as claimed in claim 16 , in which the step (iii) of localized deformation is carried out at the same time as the step (ii) of overall deformation.

18. The process as claimed in claim 1 , in which the local plastic deformation of the substrate at the end of step (iii) is strictly larger than 20%.

19. The process as claimed in claim 1 , in which the recrystallization heat treatment in step (iv) is carried out at a temperature at least 50° C. above the temperature implemented in step (ii).

20. The process as claimed in claim 1 , in which the recrystallization heat treatment in step (iv) is carried out at a temperature at least 100° C. above the temperature implemented in step (ii).

Assignees

• Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventors

• Lebrun Jean-Marie
• Garandet Jean-Paul
• Missiaen Jean-Michel
• Pascal Céline

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• H01L31/03682

  Electricity · mapped topic