Integrated photodetector waveguide structure with alignment tolerance

US9423582B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9423582-B2
Application numberUS-201514833639-A
CountryUS
Kind codeB2
Filing dateAug 24, 2015
Priority dateJan 7, 2014
Publication dateAug 23, 2016
Grant dateAug 23, 2016

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  1. Title

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  2. Abstract

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Abstract

Official abstract text for this publication.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

First claim

Opening claim text (preview).

What is claimed is: 1. A sensor structure, comprising: a waveguide structure bounded by one or more shallow trench isolation (STI) structures; and a photodetector fully landed on the waveguide structure, adjacent to the one or more STI structures wherein the photodetector has a bottom and lateral sides, and the sensor structure further comprising an encapsulating material encapsulating the bottom and lateral sides of the photodetector, at least a portion of the encapsulating material encapsulating the lateral sides of the photodetector landing on the waveguide structure, the photodetector contacting the waveguide structure through a hole in the encapsulating material. 2. The sensor structure of claim 1 , wherein the waveguide structure is tapered. 3. The sensor structure of claim 1 , wherein the waveguide structure is continuously tapered. 4. The sensor structure of claim 3 , wherein the photodetector is continuously tapered. 5. The sensor structure of claim 4 , wherein the continuously tapered photodetector is fully landed on a planar surface of the continuously tapered waveguide structure. 6. The sensor structure of claim 4 , wherein the continuously tapered photodetector is formed as a double tapered photodetector. 7. The sensor structure of claim 6 , wherein the double tapered photodetector includes a taper at its input end portion. 8. The sensor structure of claim 6 , wherein the continuously tapered waveguide structure is formed from silicon material or silicon on insulator material.

Assignees

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Classifications

  • Circuit design · CPC title

  • Combinations of two or more optical elements · CPC title

  • by etching · CPC title

  • Coupling light guides with opto-electronic elements · CPC title

  • Optical features · CPC title

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What does patent US9423582B2 cover?
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification G02B6/1228. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 23 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).