Optical waveguide structure with waveguide coupler to facilitate off-chip coupling
US-9103972-B2 · Aug 11, 2015 · US
US9423582B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9423582-B2 |
| Application number | US-201514833639-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2015 |
| Priority date | Jan 7, 2014 |
| Publication date | Aug 23, 2016 |
| Grant date | Aug 23, 2016 |
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An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.
Opening claim text (preview).
What is claimed is: 1. A sensor structure, comprising: a waveguide structure bounded by one or more shallow trench isolation (STI) structures; and a photodetector fully landed on the waveguide structure, adjacent to the one or more STI structures wherein the photodetector has a bottom and lateral sides, and the sensor structure further comprising an encapsulating material encapsulating the bottom and lateral sides of the photodetector, at least a portion of the encapsulating material encapsulating the lateral sides of the photodetector landing on the waveguide structure, the photodetector contacting the waveguide structure through a hole in the encapsulating material. 2. The sensor structure of claim 1 , wherein the waveguide structure is tapered. 3. The sensor structure of claim 1 , wherein the waveguide structure is continuously tapered. 4. The sensor structure of claim 3 , wherein the photodetector is continuously tapered. 5. The sensor structure of claim 4 , wherein the continuously tapered photodetector is fully landed on a planar surface of the continuously tapered waveguide structure. 6. The sensor structure of claim 4 , wherein the continuously tapered photodetector is formed as a double tapered photodetector. 7. The sensor structure of claim 6 , wherein the double tapered photodetector includes a taper at its input end portion. 8. The sensor structure of claim 6 , wherein the continuously tapered waveguide structure is formed from silicon material or silicon on insulator material.
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