Diode-based devices and methods for making the same

Patent metadata

Field	Value
Publication number	US-9853118-B2
Application number	US-201615373847-A
Country	US
Kind code	B2
Filing date	Dec 9, 2016
Priority date	Apr 9, 2007
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

First claim

What is claimed is:

1. A method comprising:
depositing a layer of a dielectric material over a substrate, the dielectric material having a dielectric surface distal from the substrate;
patterning a first opening and a second opening in the dielectric material to expose a first portion and a second portion of the substrate, respectively, the first opening and the second opening each having an aspect ratio of at least 1;
epitaxially growing a first bottom diode region that is lattice mismatched to the substrate in and above the first opening, the first bottom diode region having a first sidewall surface extending above and away from the dielectric surface of the dielectric material;
epitaxially growing a second bottom diode region that is lattice mismatched to the substrate in and above the second opening, the second bottom diode region having a second sidewall surface extending above and away from the dielectric surface of the dielectric material;
forming a first active diode region laterally adjacent the first sidewall surface of the first bottom diode region, the first active diode region having a third sidewall surface extending above and away from the dielectric surface of the dielectric material;
forming a second active diode region laterally adjacent the second sidewall surface of the second bottom diode region, the second active diode region having a fourth sidewall surface extending above and away from the dielectric surface of the dielectric material;
epitaxially growing a first top diode region laterally adjacent the third sidewall surface of the first active diode region; and
epitaxially growing a second top diode region laterally adjacent the fourth sidewall surface of the second active diode region, the second top diode region being separated from the first top diode region.

2. The method of claim 1 wherein the first opening and the second opening are trenches.

3. The method of claim 1 , wherein the substrate has a crystal orientation of (111) or (100).

4. The method of claim 1 further comprising:
forming a first contact on the first top diode region and the second top diode region; and
forming a second contact on the substrate.

5. The method of claim 1 , wherein the first active diode region contains multiple quantum wells.

6. The method of claim 1 , wherein the substrate is selected from the group consisting of silicon, sapphire, and silicon carbide.

7. The method of claim 1 wherein the first bottom diode region comprises a material selected from the group consisting essentially of a Group III-V compound, a Group II-VI compound, and a Group IV alloy.

8. The method of claim 1 , wherein the first active diode region comprises a material different from material of the first top diode region and first bottom diode-region, and the first active diode region forms an intrinsic region of a p-i-n junction formed between material of the first top diode region and first bottom diode region.

9. A method comprising:
forming a dielectric layer over a substrate;
forming a first hole and a second hole in the dielectric layer to the substrate;
forming a first column as a first bottom diode region, the first column comprising a compound semiconductor material that is lattice mismatched to the substrate, the first column being in the first hole and extending above the first hole;
forming a second column as a second bottom diode region, the second column comprising a compound semiconductor material that is lattice mismatched to the substrate, the second column being in the second hole and extending above the second hole;
forming a first active diode region on and surrounding laterally disposed portions of the first column;
forming a second active diode region on and surrounding laterally disposed portions of the second column; and
forming a top diode region disposed at least in part between sidewalls of the first active diode region and the second active diode region.

10. The method of claim 9 , wherein threading dislocations in the first bottom diode region arising from lattice mismatch with the substrate terminating in the first hole, and wherein threading dislocations in the second bottom diode region arising from lattice mismatch with the substrate terminating in the second hole.

11. The method of claim 9 , wherein the first hole has an aspect ratio of at least 1 in at least two perpendicular axes.

12. The method of claim 9 , wherein the substrate is selected from the group consisting of silicon, sapphire, and silicon carbide.

13. The method of claim 9 , wherein the substrate is a single crystal silicon wafer.

14. The method of claim 9 , wherein material of the first bottom diode region includes an n-type dopant, and material of the top diode region includes a p-type dopant.

15. A method comprising:
depositing a layer of a dielectric material onto a substrate;
patterning a first opening and a second opening in the dielectric material to expose portions of the substrate, the first opening and the second opening extending from an upper surface of the dielectric material to the substrate, each of the first opening and the second opening having an aspect ratio of less than 1;
forming a first bottom diode region by growing a compound semiconductor material that is lattice mismatched to the substrate in the first opening and above the upper surface of the dielectric material;
forming a second bottom diode region by growing a compound semiconductor material that is lattice mismatched to the substrate in the second opening and above the upper surface of the dielectric material;
forming a first active diode region adjacent to and extending along sidewalls of the first bottom diode region;
forming a second active diode region adjacent to and extending along sidewalls of the second bottom diode region; and
forming a top diode region laterally on and extending along sidewalls of the first active diode region and the second active diode region, the top diode region adjoining the upper surface of the dielectric material between the first opening and the second opening.

16. The method of claim 15 , wherein the first opening and the second opening are trenches.

17. The method of claim 15 further comprising:
forming a first contact on the top diode region; and
forming a second contact on the substrate.

18. The method of claim 15 , wherein the first active diode region contains multiple quantum wells.

19. The method of claim 15 , wherein threading dislocations in the first bottom diode region arising from lattice mismatch with the substrate extend into the first active diode region.

20. The method of claim 15 , wherein the top diode region is a continuous top diode region having a planar surface distal the first active diode region and the second active diode region.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lochtefeld Anthony J

Classifications

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/276

  Lateral overgrowth · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title