Semiconductor memory device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9853050-B2
Application number	US-201615242763-A
Country	US
Kind code	B2
Filing date	Aug 22, 2016
Priority date	Mar 14, 2016
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

According to an embodiment, a semiconductor memory device includes a substrate, at least one stacked body, and a first insulating film. The stacked body includes a first end portion positioned at an end in at least one of a first direction and a second direction that crosses the first direction along a surface of the substrate, the plurality of electrode layers being formed into stairs in the first end portion, each of the plurality of electrode layers having a step in the first end portion. The first insulating film is provided on the substrate and includes first and second surfaces, the first and second surfaces surrounding the first end portion, the first surface being crossing a direction that the steps are formed, the second surface being positioned along the direction that the steps are formed.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor memory device, comprising:
forming a stacked body on a substrate by alternately stacking a first insulating layer and a first layer;
forming a first trench in the stacked body, the first trench surrounding a part of the stacked body;
forming a protection film and a first film in the first trench;
removing a first portion of the first film by etching in a first direction opposite to a stacking direction of the stacked body;
removing a part of the first layer by etching in a second direction crossing the stacking direction, the first layer being exposed by the removal of the first portion of the first film;
removing a second portion of the first film by etching in the first direction;
further removing a part of the first layer and a part of another first layer by etching in the second direction, the another first layer being exposed by the removal of the second portion of the first film; and
embedding an insulating film in hollow spaces provided by the removal of the parts of the first layer and the another first layer,
the first trench having a first portion and a second portion, the first portion extending in a third direction crossing the second direction with a first width in the second direction, the second portion extending in the second direction with a second width in the third direction,
the second width being smaller than the first width,
the first width being not less than 3 times a thickness of the protection film, and
the second width being not more than 2 times the thickness of the protection film.

2. The method according to claim 1 , further comprising:
forming stairs in an end portion of the stacked body by repeating the etching in the first direction and the etching in the second direction,
wherein the number of repetitions of the etchings coincides with the number of steps in the stairs.

3. The method according to claim 1 , further comprising:
forming stairs in an end portion of the stacked body by repeating the etching in the first direction and the etching in the second direction with the same number of repetitions as a number of first layers to provide the stairs with the same number of steps as the number of repetitions; and
removing the first film in the first trench,
wherein the insulating film is formed in the hollow spaces after the removal of the first layers in the hollow spaces and the first trench after the removal of the first film in the first trench.

4. The method according to claim 1 , wherein a setback distance in the second direction of the first layer exposed by the removal of the first portion of the first film is almost the same as a setback distance in the second direction of the another first layer exposed by the removal of the second portion of the first film.

5. The method according to claim 1 , wherein a setback distance in the first direction of the first film is almost the same as a total thickness of the first insulating layer and the first layer.

6. The method according to claim 1 , further comprising:
forming a second trench in the stacked body, the second trench surrounding a part of the stacked body;
forming a second film in the second trench;
removing a first portion of the second film by etching in the first direction;
removing a part of the first layer by etching in a fourth direction crossing the stacking direction, the first layer being exposed by the removal of the first portion of the second film;
removing a second portion of the second film by etching in the first direction; and
further removing a part of the first layer and a part of another first layer by etching in the fourth direction, the another first layer being exposed by the removal of the second portion of the second film.

7. The method according to claim 1 , further comprising:
forming stairs in an end portion of the stacked body by repeating the etching in the first direction and the etching in the second direction,
wherein the insulating film is embedded in the hollow spaces provided next to the stairs.

Assignees

• Toshiba Memory Corp

Inventors

• Kikutani Keisuke

Classifications

• H10W20/435

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H01L27/11565

  Electricity · mapped topic

• H01L23/5283

  Electricity · mapped topic

• H01L27/11556

  Electricity · mapped topic

• H01L27/11582 Primary

  Electricity · mapped topic