Ion implantation system and method
US-2015357152-A1 · Dec 10, 2015 · US
US9850570B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9850570-B2 |
| Application number | US-201615203747-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 6, 2016 |
| Priority date | Jul 6, 2015 |
| Publication date | Dec 26, 2017 |
| Grant date | Dec 26, 2017 |
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The use of non-mass analyzed ion implanter is advantageous in such application as it generates ion implanting at different depth depending on the ions energy and mass. This allows for gaining advantage from lubricity offered as a result of the very light deposition on the surface, and at the same time the hardness provided by the intercalated ions implanted below it, providing benefits for cover glass, low E enhancement, and other similar materials. In further aspects, ion implantation is used to create other desirable film properties such anti-microbial and corrosion resistance.
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The invention claimed is: 1. A low-E glass panel comprising: a glass panel; a low emissivity coating having a top surface exposed to surrounding environment; a plurality of ions implanted to intercalate among molecular species to a defined depth below the top surface of the low emissivity coating, wherein the ions are selected from at least one of: Zr, Ag, Al, Ti, and Hydrogen. 2. The low-E glass panel of claim 1 , wherein the ions are selected from at least one of: Zr, Ag, and, Al. 3. The low-E glass panel of claim 1 , wherein the low emissivity coating comprises a plurality of layers with a top layer having the top surface exposed to surrounding environment, and wherein the ions are intercalated among molecular species of only the top layer. 4. The low-E glass panel of claim 1 , wherein the low emissivity coating comprises a layer of SiNx and wherein the ions comprise Zr ions implanted into the SiNx layer. 5. The low-E glass panel of claim 1 , wherein the low emissivity coating comprises a layer of SiNx and wherein the ions comprise aluminum ions implanted into the SiNx layer. 6. The low-E glass panel of claim 1 , wherein the low emissivity coating comprises a layer of ZrOx and wherein the ions comprise Ag ions implanted into the ZrOx layer. 7. A low-E glass panel comprising: a glass panel; a low emissivity coating; a lubricious layer comprising ions deposited onto top surface of the low emissivity coating; and, a plurality of ions implanted to intercalate among molecular species to a defined depth below the top surface of the low emissivity coating, wherein the ions are selected from at least one of: Zr, Ag, Al, Ti, and Hydrogen. 8. The low-E glass panel of claim 7 , wherein the lubricious layer has a thickness of 5 angstrom or less. 9. A low-E glass panel comprising: a glass panel; a low emissivity coating having a top surface facing surrounding environment; a plurality of silver ions implanted to intercalate among molecular species of the low emissivity coating to a defined depth below the top surface of the low emissivity coating, thereby forming an anti-microbial layer on the top surface. 10. A low-E glass panel comprising: a glass panel; a low emissivity coating having a top surface facing surrounding environment; a plurality of aluminum ions implanted to intercalate among molecular species of the low emissivity coating to a defined depth below the top surface of the low emissivity coating, thereby improving the UV reflectance of the low emissivity coating.
of refractory metals or yttrium · CPC title
Silicon nitride · CPC title
by deposition from the vapour phase · CPC title
Transferring the substrates through a series of coating stations (C23C14/562 takes precedence) · CPC title
Ion implantation · CPC title
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