Ion implantation for superconductor tape fabrication

Patent metadata

Field	Value
Publication number	US-9850569-B2
Application number	US-201314091510-A
Country	US
Kind code	B2
Filing date	Nov 27, 2013
Priority date	Nov 27, 2013
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

First claim

What is claimed is:

1. A method of forming a superconductor tape, comprising:
depositing a superconductor layer on a substrate;
forming a metal layer comprising a first metal on a surface of the superconductor layer; and
implanting an alloy species as ions into the metal layer, wherein the first metal forms a metal alloy after the implanting of the alloy species, wherein the ions are not implanted into the superconductor layer.

2. The method of claim 1 , further comprising providing the metal layer and superconductor layer as a patterned stack that defines a first pattern on the substrate.

3. The method of claim 1 , wherein the substrate comprises a metal tape, the method further comprising continuously drawing the metal tape through an implant zone containing ions of the alloy species during the implanting.

4. The method of claim 1 , wherein the substrate comprises a substrate base and an intermediate layer that comprises a material having a preferred crystallographic orientation.

5. The method of claim 1 , further comprising annealing the metal layer after the implanting.

6. The method of claim 1 , wherein the metal layer is silver.

7. The method of claim 1 wherein the metal layer is a shunt metal layer, the method further comprising depositing a protection metal layer on the shunt metal layer after the implanting.

8. The method of claim 1 , wherein the alloy species forms a mole fraction of 0.1% to 30% with respect to the metal.

9. The method of claim 6 , wherein the alloy species comprises at least one of Zn, Sn, Zr, Ta, As, Ge, C, B, N, or P.

10. The method of claim 1 , wherein the implanting the alloy species comprises:
performing a first implant under a first set of conditions;
and performing a second implant under a second set of conditions, wherein the second set of conditions differs from the first set of conditions in at least one of species type, ion energy, or ion dose.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Wang Connie P
• Murphy Paul
• Sullivan Paul
• Godet Ludovic
• Sinclair Frank
• Evans Morgan

Classifications

• H01B13/0016

  for heat treatment · CPC title

• H01B12/02

  characterised by their form · CPC title

• C23C14/025

  Metallic sublayers · CPC title

• C23C14/5806

  Thermal treatment · CPC title

• H01B13/0036

  Details · CPC title