Debonding a glass substrate from carrier using ultrasonic wave

Patent metadata

Field	Value
Publication number	US-9847243-B2
Application number	US-54868509-A
Country	US
Kind code	B2
Filing date	Aug 27, 2009
Priority date	Aug 27, 2009
Publication date	Dec 19, 2017
Grant date	Dec 19, 2017

Abstract

A process for making a device comprising a thin functional substrate comprising bonding the functional substrate to a carrier substrate, forming functional components on the functional subsrate, and debonding the functional substrate from the carrier substrate by applying ultrasonic wave to the bonding interface. The application of ultrasonic wave aids the debonding step by reducing the tensile stress the functional substrate may experience.

First claim

What is claimed is:

1. A process for making a device comprising a thin functional glass substrate having a first surface, a second surface opposite the first surface, and a thickness T 1 between the first surface and the second surface, wherein T 1 ≦500 μm, comprising the following steps:
(A) bonding the first surface of the functional glass substrate to a carrier substrate having a thickness T 2 that is greater than T 1 by using a layer of elastomer bonding agent at a bonding interface including an outer periphery circumscribing a bonding area positioned between the first surface of the functional substrate and a bonding surface of the carrier substrate; then
(B) processing the second surface of the functional substrate; and then
(C) targeting an ultrasonic wave at a peripheral area of the outer periphery of the bonding interface to initiate debonding at the peripheral area of the bonding interface to achieve a preferential debonding of the layer of elastomer bonding agent from one of the functional glass substrate and the carrier substrate to release the carrier substrate from the functional substrate.

2. A process according to claim 1 , wherein the bonding agent used in step (A) comprises at least one of a silicone adhesive and a perfluoro elastomer.

3. A process according to claim 1 , wherein the layer of bonding agent is an elastomer having (a) a Shore A hardness in the range of 10 to 90; and (b) a roughness of at most 183 nanometers.

4. A process according to claim 3 , wherein the bond between the carrier substrate and the layer of bonding agent has a peel strength of at least 0.5 kilonewtons/meter when measured at a peeling speed of 20 millimeters/minute and a peeling angle of 90°.

5. A process according to claim 1 , wherein in step (C), the ultrasonic wave is targeted at the peripheral area of the outer periphery of the bonding interface through a liquid bath.

6. A process according to claim 5 , wherein in step (C), the ultrasonic wave is targeted at the peripheral area of the outer periphery of the bonding interface through a liquid bath comprising an organic solvent having a surface tension lower than water at 20° C.

7. A process according to claim 1 , wherein step (C) further comprises, after targeting the ultrasonic wave at the peripheral area of the outer periphery of the bonding interface, peeling the functional substrate away from the carrier substrate.

8. A process according to claim 7 , wherein during the step of peeling the functional substrate away from the carrier substrate, the peeling radius is at least 5 cm.

9. A process according to claim 1 , wherein the functional substrate has a thickness T 1 of at most 400 μm.

10. A process according to claim 1 , wherein in step (A), the layer of bonding agent at the bonding interface has a thickness of at most 300 μm.

11. A process according to claim 1 , wherein step (B) forms a functional component and in step (C), the ultrasonic wave is targeted such that the functional component formed in step (B) is not damaged.

12. A process according to claim 1 , wherein the layer of the bonding agent has a stronger adhesion to the carrier substrate than to the functional substrate.

13. A process according to claim 12 , wherein at the end of step (C), the carrier substrate remains bonded to the layer of the bonding agent.

14. A process according to claim 1 , wherein step (A) comprises:
(A01) applying a pre-polymerization layer of the bonding agent on a surface of the carrier substrate; and subsequently
(A02) polymerizing the pre-polymerization layer to obtain a polymerized layer of the bonding agent bonded to the carrier substrate; and
(A03) placing the first surface of the functional substrate over the polymerized layer of bonding agent to achieve a bond with the functional substrate that is weaker than the bond between the bonding agent and the carrier substrate.

15. A process according to claim 1 , wherein step (A) comprises:
(A11) forming a first layer of a first coating over a surface of the carrier substrate;
(A12) applying the layer of the bonding agent between the first layer of the first coating and the first surface of the functional state.

16. A process according to claim 15 , wherein in step (A11), the first layer of the first coating comprises a silane.

17. A process according to claim 1 , wherein after step (C), the carrier substrate bonding to the layer bonding agent is reused in a cycle of processing another functional substrate.

18. A process according to claim 1 , wherein the functional substrate comprises multiple layers of glass and polymer such as polyimide.

19. A process according to claim 1 , wherein step (C) achieves preferential debonding of the layer of elastomer bonding agent from the functional glass substrate while the layer of elastomer bonding agent remains bonded to the carrier substrate.

20. A process according to claim 1 , wherein, after targeting the ultrasonic wave at the peripheral area of the outer periphery of the bonding interface to initiate debonding at the peripheral area of the bonding interface, step (C) further includes directing the ultrasonic wave to scan a full area of the bonding interface to achieve sequential debonding of the carrier substrate from the functional substrate.

21. A process for making a device comprising a thin functional glass substrate having a first surface, a second surface opposite the first surface, and a thickness T 1 between the first surface and the second surface, wherein T 1 ≦500 μm, comprising the following steps:
(A) bonding the first surface of the functional glass substrate to a carrier substrate having a thickness T 2 that is greater than T 1 by using a layer of elastomer bonding agent at a bonding interface including an outer periphery circumscribing a bonding area positioned between the first surface of the functional substrate and a bonding surface of the carrier substrate; then
(B) processing the second surface of the functional substrate; and then
(C) targeting an ultrasonic wave at a peripheral area of the outer periphery of the bonding interface to initiate debonding at the peripheral area of the bonding interface to begin releasing the carrier substrate from the functional substrate.

22. A process according to claim 21 , wherein step (C) includes using a waveguide to provide a predetermined travel path for the ultrasonic wave to selectively guide the ultrasonic wave to the peripheral area of the bonding interface.

23. A process according to claim 22 , wherein the waveguide comprises a quantity of liquid configured to channel the ultrasonic wave to travel along the predetermined travel path.

24. A process according to claim 1 , wherein step (C) releases the entire carrier substrate from the functional glass substrate.

25. A process according to claim 21 , wherein after step (C), further comprising step (D) of releasing the entire carrier substrate from the functional glass substrate.

Assignees

• Carre Alain Robert Emile
• Garner Sean Matthew
• Waku-Nsimba Jean
• Corning Inc

Inventors

• Carre Alain Robert Emile
• Garner Sean Matthew
• Waku-Nsimba Jean

Classifications

• H10P72/7446

  using a peeling wheel · CPC title

• H10P72/7426

  used as a support during build up manufacturing of active devices · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title