Conductive film and method of making same

Patent metadata

Field	Value
Publication number	US-9847211-B2
Application number	US-201515111866-A
Country	US
Kind code	B2
Filing date	Jan 16, 2015
Priority date	Jan 16, 2014
Publication date	Dec 19, 2017
Grant date	Dec 19, 2017

Abstract

A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, the fiber pattern defining protected metal and exposed metal of the conductive metal film; removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate. An annealing step con be employed after depositing the fiber pattern to increase the surface area of contact between the fiber pattern and the conductive metal film.

First claim

What is claimed is:

1. A method for making a conductive film comprising the steps of:
depositing a conductive metal film on a substrate to form a metal-coated substrate;
depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, wherein the fiber pattern is deposited by a method selected from the group consisting of electrospinning and nanofibers by gas jet, the fiber pattern defining protected metal and exposed metal of the conductive metal film;
removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and
removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate.

2. The method of claim 1 , further comprising:
annealing the fiber pattern of the masked substrate to increase the surface area of contact between the fiber pattern and the conductive metal film.

3. The method of claim 1 , wherein the substrate is a transparent substrate.

4. The method of claim 3 , wherein the substrate is selected from glass, quartz, transparent polymer film, and transparent oxide.

5. The method of claim 1 , wherein the conductive metal is selected from copper, nickel, aluminum, tungsten, titanium, chromium, iron, zinc, zirconium, niobium, molybdenum, tin, indium, silver, gold, platinum, lead, vanadium, manganese, cobalt, palladium and alloys of the foregoing.

6. The method of claim 1 , wherein the conductive metal film is deposited by a method selected from electron beam evaporation, electroless plating, electroplating, chemical vapor deposition, and sputtering.

7. The method of claim 1 , wherein the conductive metal film in the metal-coated substrate is less than 1000 microns thick.

8. The method of claim 1 , wherein the fiber pattern is formed of a polymer.

9. The method of claim 1 , wherein the fiber pattern is formed of fibers having a diameter of less than 100 microns.

10. The method of claim 9 , wherein the fiber pattern is formed of fibers having a diameter of less than 1 micron.

11. The method of claim 1 , wherein the fiber pattern has a porosity of greater than 60%.

12. The method of claim 1 , wherein the fiber pattern is deposited as a random pattern.

13. The method of claim 1 , wherein the fiber pattern is deposited in a controlled pattern.

14. The method of claim 1 , wherein the exposed metal is removed from the conductive metal film by a method selected from metal wet-etching and metal dry-etching.

15. The method of claim 1 , wherein the exposed metal is removed from the conductive metal film by a metal wet-etching technique selected from the group consisting of soaking etching, stirring etching and rinsing etching.

16. The method of claim 15 , wherein the exposed metal is removed by rinsing etching.

17. The method of claim 16 , wherein the fiber pattern is formed of fibers having a diameter of less than 1 micron.

18. The method of claim 1 , wherein the fiber pattern is removed from the protective conductive film by a process selected from dissolution, washing, plasma etching, and UV-ozone etching.

Assignees

• Zhu Yu
• He Tianda
• Univ Akron

Inventors

• Zhu Yu
• He Tianda

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• G02F1/13439

  characterised by their electrical, optical, physical properties; materials therefor; method of making · CPC title

• G03F7/42

  Stripping or agents therefor · CPC title

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title