Integrated photodetector waveguide structure with alignment tolerance
US-2016322518-A1 · Nov 3, 2016 · US
US9846285B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9846285-B2 |
| Application number | US-201213444635-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 11, 2012 |
| Priority date | Apr 11, 2012 |
| Publication date | Dec 19, 2017 |
| Grant date | Dec 19, 2017 |
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Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light. Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.
Opening claim text (preview).
The invention claimed is: 1. An apparatus comprising: a III-V slab, having a first taper including a first III-V region and a second III-V region smaller than the first, for: receiving light at the first III-V region; confining an optical mode of the received light; and emit light at the second III-V region; a silicon slab, having a second taper including a first silicon region and a second silicon region larger than the first, for receiving the light from the III-V slab and confining an optical mode of the light received from the III-V slab; and a spacer layer disposed between the III-V slab and the silicon slab; wherein at least one of the first and second tapers comprises a taper of a height of the III-V slab or the silicon slab, respectively, and wherein the second taper is formed by the second silicon region having a height greater than the first silicon region. 2. A system comprising: a light source; a modulator to receive light from the light source; and a transmission medium to operatively couple the light source and the modulator; wherein at least one of the light source and the modulator includes an optical device comprising: a III-V slab, having a first taper including a first III-V region and a second III-V region smaller than the first, for: receiving light at the first III-V region; confining an optical mode of the received light; and emit light at the second III-V region; a silicon slab, having a second taper including a first silicon region and a second silicon region larger than the first, for receiving the light from the III-V slab and confining an optical mode of the light received from the III-V slab; and a spacer layer disposed between the III-V slab and the silicon slab wherein at least one of the first and second tapers comprises a taper of a height of the III-V slab or the silicon slab, respectively, and wherein the second taper is formed by the second silicon region having a height greater than the first silicon region.
Silicon · CPC title
and having an integrated mode-size expanding section, e.g. tapered waveguide · CPC title
Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title
Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs) · CPC title
Optical features · CPC title
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