Tantalum sputtering target

Patent metadata

Field	Value
Publication number	US-9845528-B2
Application number	US-201013265566-A
Country	US
Kind code	B2
Filing date	Aug 4, 2010
Priority date	Aug 11, 2009
Publication date	Dec 19, 2017
Grant date	Dec 19, 2017

Abstract

Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity).

First claim

The invention claimed is:

1. A tantalum sputtering target consisting of tungsten as an essential component of a content of 10 mass ppm or more and 100 mass ppm or less and a balance of tantalum and having a purity of 99.998 mass % or higher excluding tungsten and gas components.

2. A tantalum sputtering target according to claim 1 , wherein the content of tungsten is 10 mass ppm or more and 50 mass ppm or less.

3. The tantalum sputtering target according to claim 2 , wherein the content of tungsten has a variation within a range from −20% to +20% within the target.

4. The tantalum sputtering target according to claim 3 , wherein the tantalum sputtering target has an average crystal grain size of 120 μm or less.

5. The tantalum sputtering target according to claim 4 , wherein the average crystal grain size has a variation within a range from −20% to +20% within the target.

6. The tantalum sputtering target according to claim 1 , wherein the content of tungsten has a variation within a range from −20% to +20% within the target.

7. The tantalum sputtering target according to claim 1 , wherein the tantalum sputtering target has an average crystal grain size of 120 μm or less within the target.

8. The tantalum sputtering target according to claim 7 , wherein the average crystal grain size has a variation within a range from −20% to +20% within the target.

9. A tantalum sputtering target according to claim 1 , wherein the purity of the tantalum is 99.999 mass % or higher excluding tungsten and gas components.

10. A tantalum sputtering target, consisting of:
tungsten of a content of 10 to 100 mass ppm;
at least one of molybdenum and niobium of a content greater than 0 mass ppm to 100 mass ppm; and
tantalum;
wherein a total amount of tungsten, molybdenum and niobium within the target is greater than 10 mass ppm to 150 mass ppm or less; and
wherein the purity of the target excluding tungsten, molybdenum, niobium and gas components is 99.998% or more.

11. The tantalum sputtering target according to claim 10 , wherein the content of the at least one of molybdenum and niobium is 10 mass ppm or more and 100 mass ppm or less.

12. The tantalum sputtering target according to claim 10 , wherein the content of the at least one of molybdenum and niobium is 10 mass ppm or more and 50 mass ppm or less, and wherein the content of tungsten is 10 mass ppm or more and 50 mass ppm or less.

13. The tantalum sputtering target according to claim 10 , wherein the contents of tungsten, molybdenum and niobium have a variation within a range from −20% to +20% within the target.

14. The tantalum sputtering target according to claim 10 , wherein the tantalum sputtering target has an average crystal grain size of 120 μm or less.

15. The tantalum sputtering target according to claim 14 , wherein the average crystal grain size has a variation within a range from −20% to +20% within the target.

16. A tantalum sputtering target consisting of a content of tungsten of 1 mass ppm or more to 100 mass ppm or less, and tantalum having a purity, excluding tungsten and gas components, of 99.999 mass % or more, wherein the content of tungsten has a variation within a range from −20% to +20% within the target.

17. The tantalum sputtering target according to claim 16 , wherein the tantalum sputtering target has an average crystal grain size of 120 μm or less.

18. The tantalum sputtering target according to claim 17 , wherein the average crystal grain size has a variation within a range from −20% to +20% within the target.

Assignees

• Fukushima Atsushi
• Oda Kunihiro
• Senda Shinichiro
• Jx Nippon Mining & Metals Corp

Inventors

• Fukushima Atsushi
• Oda Kunihiro
• Senda Shinichiro

Classifications

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C22C27/02

  Alloys based on vanadium, niobium, or tantalum · CPC title

• C22F1/18

  High-melting or refractory metals or alloys based thereon · CPC title

• C23C14/34 Primary

  Sputtering · CPC title